Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.

Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.

Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.

Abstract: Provided is a substrate placement stage or substrate processing apparatus which can suppress thermal deformation of the substrate placement stage when the substrate placement stage on which a substrate is placed is heated in a process chamber. The substrate placement stage includes: a heating element; a first member surrounding the heating element; and a second member covering a surface of the first member and including a placing surface for placing a substrate thereon, wherein the first member is made of a first material containing ceramics and aluminum, and the second member is made of a second material containing ceramics and aluminum, a content of the ceramics in the second material being lower than that of the first material.

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Abstract: The invention provides a composite particle, a process for producing the same, and cosmetics containing the same The invention relates to composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide and obtained by hot melt microencapsulation or spray cooling, or composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide, wherein the degree of remaining zinc oxide in the particles is 50 wt % or more after being dipped for 1 hour in 0.5 mol/L hydrochloric acid solution at 25° C. (solution composition: water and ethanol in equal volumes), a process for producing the composite particles, and cosmetics containing the composite particles.

Abstract: The invention provides a composite particle, a process for producing the same, and cosmetics containing the same The invention relates to composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide and obtained by hot melt microencapsulation or spray cooling, or composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide, wherein the degree of remaining zinc oxide in the particles is 50 wt % or more after being dipped for 1 hour in 0.5 mol/L hydrochloric acid solution at 25° C. (solution composition: water and ethanol in equal volumes), a process for producing the composite particles, and cosmetics containing the composite particles.

Abstract: A process for preparing a solid particles-containing emulsion comprising mixing an oil droplets-in-water emulsion with lipophilic solid particles or a dispersion thereof, thereby allowing to include the lipophilic solid particles in the oil droplets. The solid particles-containing emulsion can be suitably used in paints, inks for ink jet printers, fiber-treated agents, coating materials, adhesives, skin cosmetics, hair cosmetics, and the like.

Abstract: In an oral composition comprising a cationic bactericide, either one or both of cyclodextrin and a water-soluble flavor obtained by extracting an oil-soluble flavor with an aqueous ethanol solution are blended. The composition allows the cationic bactericide to exert its activity to a full extent, presents a pleasant feel on use without any peculiar taste, and is stable during storage. The invention eliminates the use of anionic and nonionic surfactants.

Abstract: A supporting shaft 11 that can be inserted through a center hole 5a in each of cured resin disks 5 and which has a bottom plate in a disk form at an end, as well as a plurality of spacer disks 12 each having a center hole through which the supporting shaft 11 can be inserted are used in the process of manufacturing GC (glass-like carbon) by baking to carbonize the cured resin disks 5. The cured resin disks 5 are stacked alternately with the spacer disks 12 on the supporting shaft 11 in an erect position that is inserted through the center holes in each of the cured resin and spacer disks. The stack is then baked in a baking furnace. By so doing, the cured resin disks can be set up easily and the baking furnace can be operated to its full capacity.