Patents by Inventor Toshiya Shingen

Toshiya Shingen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Copper material for chemical vapor deposition and process for forming thin film using the same
    Patent number: 6429325
    Abstract: A material for chemical vapor deposition comprising a &bgr;-diketonatocopper (II) complex which is liquid at room temperature.
    Type: Grant
    Filed: December 6, 2000
    Date of Patent: August 6, 2002
    Assignee: Asahi Denka Kogyo Kabushiki Kaisha
    Inventors: Kazuhisa Onozawa, Toshiya Shingen
  • Process of producing a ruthenium or ruthenium oxide thin film
    Patent number: 6316064
    Abstract: A ruthenium or ruthenium oxide thin film produced by CVD using as a ruthenium source a compound represented by formula (I): wherein R1 and R2 represent different alkyl groups having 1 to 4 carbon atoms.
    Type: Grant
    Filed: January 20, 2000
    Date of Patent: November 13, 2001
    Assignee: Asahi Denka Kogyo Kabushiki Kaisha
    Inventors: Kazuhisa Onozawa, Akifumi Masuko, Toshiya Shingen