Abstract: A placing table includes an edge ring disposed to surround a substrate, the edge ring having a first recess portion at a lower portion thereof; an electrostatic chuck having a first placing surface on which the substrate is placed, a second placing surface on which the edge ring is placed, and an electrode embedded therein to face the second placing surface; an annular member disposed to surround the electrostatic chuck, the annular member having a second recess portion; and an elastic member disposed in a space surrounded by the first recess portion, the electrostatic chuck and the second recess portion.

Abstract: An edge ring formed of a material including boron carbide and silicon carbide is provided. The content by percentage of the boron carbide contained in the material is in a range between 30% and 50%.

Abstract: An edge ring is disposed to surround a target substrate. The edge ring includes a first upper surface made of silicon carbide, tungsten carbide, magnesium oxide, or yttria, and a second upper surface made of silicon. The second upper surface is formed at a position lower than the first upper surface to face a bottom surface of a peripheral portion of the target substrate.

Abstract: Provided is an edge ring to reduce the frequency of replacement of an edge ring used for plasma processing and to suppress the leakage of a heat transfer gas. The edge ring has an annular first member and an annular second member, the first member has a recess on the lower surface and is made of a first material having plasma resistance, and the second member is arranged in the recess of the first member and is made of a second material having a rigidity lower than that of the first material.

Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

Abstract: A placing table includes an edge ring disposed to surround a substrate, the edge ring having a first recess portion at a lower portion thereof; an electrostatic chuck having a first placing surface on which the substrate is placed, a second placing surface on which the edge ring is placed, and an electrode embedded therein to face the second placing surface; an annular member disposed to surround the electrostatic chuck, the annular member having a second recess portion; and an elastic member disposed in a space surrounded by the first recess portion, the electrostatic chuck and the second recess portion.

Abstract: A placing table includes an edge ring disposed to surround a substrate; an electrostatic chuck having a first placing surface on which the substrate is placed and a second placing surface on which the edge ring is placed; and an elastic member placed at a position lower than the first placing surface within a gap between an inner circumferential surface of the edge ring and a side surface of the electrostatic chuck between the first placing surface and the second placing surface.

Abstract: A focus ring that surrounds a periphery of a substrate placed on a stage in a processing chamber of a substrate processing apparatus includes a lower surface to contact a peripheral portion of the stage, the lower surface being inclined such that an outer peripheral side becomes lower than an inner peripheral side in a radial direction.

Abstract: A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.

Abstract: A focus ring for a plasma processing apparatus has an inner region (12a), middle region (12b), and outer region (12c), disposed in this order from the inner side to surround a target substrate (W). On the side to be exposed to plasma, the surfaces of the inner region (12a) and outer region (12c) consist essentially of a dielectric, while the surface of the middle region (12b) consists essentially of a conductor. The middle region (12b) is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate (W). If there is no middle region (12b), the peak of plasma density appears substantially directly above the peripheral edge of the target substrate (W).