Patents by Inventor Toshiyasu Hishii

Toshiyasu Hishii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5532610
    Abstract: The apparatus for collectively burning-in or testing a plurality of semiconductor chips disposed on a wafer without dicing the chips into individuals, the apparatus including a testing substrate, an active circuit disposed on the testing substrate for activating chips disposed on the wafer to be tested, a plurality of pads disposed on the testing substrate and positioned so that the pads are disposed in alignment with bonding pads of the chips disposed on the wafer when the testing substrate is overlaid on the wafer, and an anisotropic conductive layer disposed on the pads.
    Type: Grant
    Filed: August 25, 1994
    Date of Patent: July 2, 1996
    Assignee: NEC Corporation
    Inventors: Tohru Tsujide, Toshiyasu Hishii, Kazuo Nakaizumi
  • Patent number: 5086777
    Abstract: A blood pressure transducer apparatus having a semiconductor pressure sensor and a temperature compensating circuit mounted on a substrate which is fixedly mounted on a wall portion of a housing, with a fluid passageway being formed in the wall portion to be coupled with a fluid-filled catheter inserted into a blood vessel and being hydraulically coupled with the sensor. In order to improvement of temperature compensation, manufacturing yield and reliability as well as small-sizing the apparatus, the substrate has a first surface on which the sensor is mounted and an opposite second surface. The second surface is fixed at a partial area thereof to an abutment on an inner surface of the wall portion. The temperature compensating circuit is formed on the remaining area of the second surface so that the temperature compensating circuit is adjacent to the passageway.
    Type: Grant
    Filed: May 2, 1990
    Date of Patent: February 11, 1992
    Assignee: NEC Corporation
    Inventor: Toshiyasu Hishii
  • Patent number: 4377944
    Abstract: For use in a gas sensor, an integrated gas sensitive unit comprises, on a single principal surface, a gas sensitive semiconductor element and a first resistor member connected to the element in series for deriving an electrical signal from the element. Both of the element and the first resistor member may be formed by the thick-film integration technique. A heating wire may be attached to the back surface opposite to the principal surface. A combination of secnd and third resistor members may be electrically connected to the series connection in parallel with the second and the third resistor members brought into electrical contact with the element and the first resistor member, respectively, to form a bridge circuit. The combination may be formed on the principal surface together with the series connection or separated from the series connection. Preferably, the first or the second resistor member has the same temperature dependency as the element when the heating wire is attached to the bridge circuit.
    Type: Grant
    Filed: December 29, 1980
    Date of Patent: March 29, 1983
    Assignee: Nippon Electric Co., Ltd.
    Inventors: Toshiyasu Hishii, Tokuo Takeuchi, Nobuaki Shohata, Toshio Takaba, Koichi Saito