Patents by Inventor Toshiyasu Hori

Toshiyasu Hori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ETCHING METHOD, SUBSTRATE PROCESSING METHOD, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT
    Publication number: 20150325448
    Abstract: A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
    Type: Application
    Filed: July 16, 2015
    Publication date: November 12, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takaaki MATSUOKA, Toshihisa NOZAWA, Toshiyasu HORI
  • Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element
    Patent number: 9117764
    Abstract: A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: August 25, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takaaki Matsuoka, Toshihisa Nozawa, Toshiyasu Hori
  • ETCHING METHOD, SUBSTRATE PROCESSING METHOD, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT
    Publication number: 20130157468
    Abstract: A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
    Type: Application
    Filed: July 29, 2011
    Publication date: June 20, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takaaki Matsuoka, Toshihisa Nozawa, Toshiyasu Hori
  • Etching method and recording medium
    Patent number: 8383519
    Abstract: An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.
    Type: Grant
    Filed: February 5, 2008
    Date of Patent: February 26, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Toshihisa Nozawa, Kotaro Miyatani, Toshiyasu Hori, Shigekazu Hirose
  • ETCHING METHOD AND RECORDING MEDIUM
    Publication number: 20100279510
    Abstract: An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.
    Type: Application
    Filed: February 5, 2008
    Publication date: November 4, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshihisa Nozawa, Kotaro Miyatani, Toshiyasu Hori, Shigekazu Hirose