Patents by Inventor Toshiyasu Onoda

Toshiyasu Onoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5846886
    Abstract: A metal film etching method etches selectively a metal film formed on a layer insulating film provided with viaholes so as to cover the surface of the layer insulating film and fill up the viaholes so that the metal film excluding portions there of filling up the viaholes are removed completely without forming a pit in the portions of the metal film filling up the viaholes. The metal film etching method uses a mixed reactive gas of a gas containing fluorine atoms, a gas containing chlorine atoms and oxygen gas.
    Type: Grant
    Filed: February 28, 1997
    Date of Patent: December 8, 1998
    Assignees: Kabushiki Kaisha Toshiba, Shibaura Engineering Works Co., Ltd.
    Inventors: Kei Hattori, Akira Kobayashi, Mikio Nonaka, Makoto Muto, Masaru Kasai, Toshiyasu Onoda, Tomoaki Yoshimori