Abstract: A thin film transistor includes a gate electrode formed on a substrate; a gate insulation film covering the gate electrode; an oxide semiconductor layer formed on the gate insulation film; an etching stopper film formed on a channel forming portion of the oxide semiconductor layer, and a source electrode and a drain electrode covering an edge portion of the etching stopper film. The etching stopper film is made of an insulating material, and the insulating material is capable of attenuating a light having wavelength not greater than 450 nm.

Abstract: A thin film transistor includes a gate electrode formed on a substrate; a gate insulation film covering the gate electrode; an oxide semiconductor layer formed on the gate insulation film; a source electrode and a drain electrode covering an edge portion of the oxide semiconductor layer, and a passivation film covering the source electrode, the drain electrodes, and the oxide semiconductor layer. The passivation film is made of an insulating material, and the insulating material is capable of attenuating a light of wavelength not greater than 450 nm.

Abstract: Provided is a method of manufacturing a TFT substrate for preventing characteristics of a native oxide layer in a boundary between a microcrystal semiconductor layer and an amorphous semiconductor layer from being degraded. The method includes forming a gate electrode, forming a gate insulating film, modifying the formed first amorphous silicon thin film into a first crystalline silicon thin film, removing a silicon oxide layer on the surface of the first crystalline silicon thin film, forming the second amorphous silicon thin film, and dry etching the first crystalline silicon thin film and the second amorphous silicon thin film, and it is determined whether or not the in-process TFT substrate after the dry etching is returned to the processes after the dry etching by measuring the emission intensity of radicals in plasma during the dry etching and detecting the presence or absence of the silicon oxide layer in the boundary.

Abstract: A display device is provided with a pair of a first electrode and a second electrode, at least one electrode of the first and second electrodes being transparent or translucent and a phosphor layer provided as being sandwiched between the first electrode and the second electrode, and at least one buffer layer provided as being sandwiched between the first or second electrode and the phosphor layer, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions, and wherein the buffer layer is sandwiched between the first or second electrode and the phosphor layer so that the size of an electric potential barrier between the first or second electrode and the phosphor layer via the buffer layer is made smaller than the size of a Schottky barrier between the first or second electrode and the phosphor layer that are directly made contact with each other without the buffe

Abstract: This light-emitting device includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode and constituted by dispersing n-type semiconductor particles in a p-type semiconductor medium. A light-emitting device in another embodiment includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode wherein a p-type semiconductor is segregated among the n-type semiconductor particles.

Abstract: A display is provided with: a substrate; a plurality of parallel scan wires extending over the substrate in a first direction; a plurality of parallel data wires extending parallel to a surface of the substrate in a second direction perpendicular to the first direction; at least one switching element per intersection between the scan wires and the data wires; pixel electrodes connected to the switching elements; at least one phosphor layer provided above the pixel electrodes; and common electrodes provided above the phosphor layer, and the phosphor layer has a polycrystalline structure made of a first semiconductor material and a second semiconductor material segregated between grain boundaries in the polycrystalline structure, which is different from the first semiconductor material.

Abstract: Provided is a method of manufacturing a TFT substrate for preventing characteristics of a native oxide layer in a boundary between a microcrystal semiconductor layer and an amorphous semiconductor layer from being degraded. The method includes forming a gate electrode, forming a gate insulating film, modifying the formed first amorphous silicon thin film into a first crystalline silicon thin film, removing a silicon oxide layer on the surface of the first crystalline silicon thin film, forming the second amorphous silicon thin film, and dry etching the first crystalline silicon thin film and the second amorphous silicon thin film, and it is determined whether or not the in-process TFT substrate after the dry etching is returned to the processes after the dry etching by measuring the emission intensity of radicals in plasma during the dry etching and detecting the presence or absence of the silicon oxide layer in the boundary.

Abstract: A display device is provided with a pair of a first electrode and a second electrode at least one of which is transparent or translucent and a phosphor layer formed so as to be sandwiched between the first electrode and the second electrode, and the phosphor layer has a polycrystal structure made of a first semiconductor substance in which a second semiconductor substance different from the first semiconductor substance is segregated on a grain boundary of the polycrystal structure, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions.

Abstract: A fuel cell body has an anode having an anode-side separator with projections and depressions formed on its surface, a cathode, and a membrane electrode assembly disposed between the anode and the cathode, and the fuel cell body is disposed in a container for storing liquid fuel so that at least the anode side is immersed therein. Fuel passageways through which the liquid fuel flows are formed by regions surrounded by the projections and depressions on the surface of the separator and the membrane electrode assembly. By this, the downsized, simplified and lower power consuming structure of auxiliary equipment such as a fuel feed system is achieved.

Abstract: This light emitting device includes a pair of electrodes at least one of which is transparent or translucent, and a phosphor layer that is sandwiched between the electrodes and has a polycrystalline structure made of a first semiconductor material, and in this structure, a second semiconductor material different from the first semiconductor material is segregated on a grain boundary of the polycrystalline structure. The first semiconductor material and the second semiconductor material preferably have semiconductor structures of conduction types that are different from each other. Moreover, the first semiconductor material preferably has an n-type semiconductor structure, and the second semiconductor material preferably has a p-type semiconductor structure. Furthermore, in the case where the first semiconductor material is a zinc-based material containing zinc, at least one of the paired electrodes is preferably made of a material containing zinc.

Abstract: A phosphor element (10) includes an electron hole injection electrode (2) and an electron injection electrode (8) disposed opposite to each other, an electron hole transport layer (3), a phosphor layer (4), and an electron transport layer (7) stacked in this order from the side of the electron hole injection electrode toward the side of the electron injection electrode. The stacked layers are sandwiched between the electron hole injection electrode and the electron injection electrode, and. The phosphor layer is formed of an inorganic phosphor material (4) in which at least one part of the surface is covered with an organic material (5).

Abstract: There is provided a display device: a display unit including a plurality of scan electrodes arranged to extend in parallel to each other along a first direction, a plurality of data electrodes arranged to extend in parallel to each other along a second direction crossing the scan electrodes, and a plurality of pixels, each pixel at which a pair of the scan electrode and the data electrode cross each other, each pixel having a light emitting layer and a dielectric layer interposed between the scan electrode and the data electrode from a direction vertical to a face; and an erasing pulse supplying unit operable to supply attenuation voltage pulse, to the light emitting layer of each pixel, which starts at a voltage not more than an emission starting voltage at which the light emitting layer starts emission and in which polarity is alternately reversed between positive and negative.

Abstract: Disclosed herein is a light-emitting device comprising a transparent or semi-transparent first substrate, a second substrate provided opposite to the first substrate, a transparent or semi-transparent first electrode provided on the first substrate, a second electrode provided on the second substrate so as to be opposite to the first electrode, and a light-emitting layer which contains a metal oxide semiconductor porous body, by the surface of which an organic light-emitting material is supported, and is provided between the first electrode and the second electrode.

Abstract: A display device is provided with a pair of a first electrode and a second electrode at least one of which is transparent or translucent and a phosphor layer formed so as to be sandwiched between the first electrode and the second electrode, and the phosphor layer has a polycrystal structure made of a first semiconductor substance in which a second semiconductor substance different from the first semiconductor substance is segregated on a grain boundary of the polycrystal structure, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions.

Abstract: If an ultraviolet curing resin is colored by contamination by another substance, there have been issues regarding increased cost and the environmental burden of treating the waste solution due to an inability to recycle the resin as it is. The ultraviolet curing resin that is in a colored, uncured state is decolored in the present invention by irradiation of light having a wavelength in the vicinity of the maximum absorption wavelength of the coloring material, and then recycled. As a result, it is possible to reduce costs and contribute to the protection of the environment.

Abstract: This light-emitting device includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode and constituted by dispersing n-type semiconductor particles in a p-type semiconductor medium. A light-emitting device in another embodiment includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode wherein a p-type semiconductor is segregated among the n-type semiconductor particles.

Abstract: A display is provided with: a substrate; a plurality of parallel scan wires extending over the substrate in a first direction; a plurality of parallel data wires extending parallel to a surface of the substrate in a second direction perpendicular to the first direction; at least one switching element per intersection between the scan wires and the data wires; pixel electrodes connected to the switching elements; at least one phosphor layer provided above the pixel electrodes; and common electrodes provided above the phosphor layer, and the phosphor layer has a polycrystalline structure made of a first semiconductor material and a second semiconductor material segregated between grain boundaries in the polycrystalline structure, which is different from the first semiconductor material.

Abstract: The present invention provides an ink containing a carbon nanotube with low viscosity and high dispersibility of the carbon nanotube. The present invention provides an ink containing a carbon nanotube, an organic solvent, a binder, and a dispersant, wherein the dispersant is at least one dispersant selected from the group consisting of a polyalkylol amine salt dispersant, and a polyether-modified polyalkylsiloxane dispersant.

Abstract: A linear light-emitting device is provided with a pair of first and second linear electrodes opposing each other, and a linear phosphor layer is sandwiched between the paired electrodes, with at least one of the paired first and second electrodes being a transparent electrode, and the phosphor layer has a polycrystalline structure made from a first semiconductor substance, with a second semiconductor substance different from the first semiconductor substance being segregated on a grain boundary of the polycrystalline structure.

Abstract: A light emitting device having a straight-line shape is provided with: a pair of first and second electrodes each having a straight-line shape which face each other; and a phosphor layer having a straight-line shape provided so as to be sandwiched between the pair of electrodes, wherein at least one of the pair of first and second electrodes is a transparent electrode, at least one buffer layer is provided so as to be sandwiched between the first or second electrode and the phosphor layer, and the buffer layer makes the height of a potential barrier between the electrode and the phosphor layer which sandwich the buffer layer lower than the height of a Schottky barrier when the electrode and the phosphor layer are brought into direct contact.