Abstract: A battery pack includes a cell-stacked body in which a plurality of battery cells including gas release valves are stacked, a gas release duct which connects the gas release valves of the plurality of battery cells, and a battery case which accommodates the cell-stacked body and the gas release duct. The battery pack is capable of discharging a gas from the gas release duct to an outside of the battery case. A check valve configured to allow a flow of the gas from the gas release valves to the outside of the battery case and to restrict entry of a foreign matter from the outside of the battery case is provided in the battery case.

Abstract: A film-forming method includes: forming a first film by performing an operation of forming a unit film a plurality of times, the operation including sub-step of supplying a first raw material gas containing a first element to a substrate and causing the first raw material gas to be adsorbed thereon, and sub-step of supplying a first reaction gas to the substrate; and forming a second film on the substrate by performing an operation of forming a unit film at least once, the operation including sub-step of supplying a second raw material gas containing a second element to the substrate and causing the second raw material gas to be adsorbed thereon, and sub-step of supplying a second reaction gas to the substrate, wherein a mixed film is formed by performing the forming the first film and the forming the second film, respectively once, or a plurality of times.

Abstract: A battery unit mounted on a vehicle includes a case having an intake port, a battery module which is disposed inside the case and in which a plurality of battery cells are stacked, a fan disposed inside the case and blowing cooling air to the battery module, and an intake duct connecting the intake port and the fan. The intake duct includes a first flow path extending along a first surface of the battery module, and a second flow path extending along a second surface different from the first surface of the battery module.

Abstract: A battery pack includes a cell-stacked body in which a plurality of battery cells including gas release valves are stacked, a gas release duct which connects the gas release valves of the plurality of battery cells, and a battery case which accommodates the cell-stacked body and the gas release duct. The battery pack is capable of discharging a gas from the gas release duct to an outside of the battery case. A check valve configured to allow a flow of the gas from the gas release valves to the outside of the battery case and to restrict entry of a foreign matter from the outside of the battery case is provided in the battery case.

Abstract: A film-forming method includes: forming a first film by performing an operation of forming a unit film a plurality of times, the operation including sub-step of supplying a first raw material gas containing a first element to a substrate and causing the first raw material gas to be adsorbed thereon, and sub-step of supplying a first reaction gas to the substrate; and forming a second film on the substrate by performing an operation of forming a unit film at least once, the operation including sub-step of supplying a second raw material gas containing a second element to the substrate and causing the second raw material gas to be adsorbed thereon, and sub-step of supplying a second reaction gas to the substrate, wherein a mixed film is formed by performing the forming the first film and the forming the second film, respectively once, or a plurality of times.

Abstract: A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.

Abstract: An energy storage apparatus includes: a plurality of energy storage devices arranged in a first direction; an adjacent member arranged between adjacent energy storage devices; and a device that functionally acts on the energy storage devices, in which the device is fixed to the adjacent member.

Abstract: A method for forming a silicon oxide film on a tungsten film includes performing a first process of arranging an object to be processed in a processing container kept under a reduced pressure, the object including a tungsten film and a natural oxide film being formed on a surface of the tungsten film, performing a second process of forming a silicon seed layer by adsorbing a silicon-containing gas to the tungsten film, subsequently performing a third process of annealing the object and forming the silicon oxide film by a reaction of the natural oxide film and the silicon seed layer and subsequently performing a fourth process of forming an ALD silicon oxide film by ALD using a silicon-containing gas and an oxygen active species.

Abstract: A vehicle includes: a center tunnel which is formed on a floor panel so as to extend in a front-rear direction; a high-voltage battery which is disposed on the center tunnel; and a frame member which holds the high-voltage battery, wherein leg portions are provided on a bottom portion of the frame member so as to extend obliquely downwards, and wherein the frame member is fastened to inclined surfaces of the center tunnel via the leg portions.

Abstract: A method for forming a silicon oxide film on a tungsten film includes performing a first process of arranging an object to be processed in a processing container kept under a reduced pressure, the object including a tungsten film and a natural oxide film being formed on a surface of the tungsten film, performing a second process of forming a silicon seed layer by adsorbing a silicon-containing gas to the tungsten film, subsequently performing a third process of annealing the object and forming the silicon oxide film by a reaction of the natural oxide film and the silicon seed layer and subsequently performing a fourth process of forming an ALD silicon oxide film by ALD using a silicon-containing gas and an oxygen active species.

Abstract: A vehicle can be provided in which a rear surface of a center console (30) which accommodates an electric device (D) is formed by a detachable cover member (57), and a maintenance and inspection switch (61) for the electric device (D) is provided in a space defined between the electric device (D) accommodated in the center console (30) and the cover member (57), whereby an easy access to the maintenance and inspection switch (61) for the electric device (D) accommodated in the center console (30) can be gained.

Abstract: A gas injector is installed in a vertical heat treatment apparatus which performs a heat treatment on substrates held by a substrate holder and is loaded into a vertical reaction container around which a heating part is disposed. The gas injector supplies a film forming gas to the substrates into the reaction container. The gas injector includes: a tubular injector main body disposed inside the reaction container so as to extend in a vertical direction and has gas supply holes formed therein along the vertical direction; and a tubular gas introduction pipe installed to be integrated with the tubular injector main body in the vertical direction and includes a gas inlet to which the film forming gas is inputted and a gas introduction port which communicates with an internal space of the tubular injector main body and through which the film forming gas is introduced into the internal space.

Abstract: A vehicle can be provided in which a rear surface of a center console (30) which accommodates an electric device (D) is formed by a detachable cover member (57), and a maintenance and inspection switch (61) for the electric device (D) is provided in a space defined between the electric device (D) accommodated in the center console (30) and the cover member (57), whereby an easy access to the maintenance and inspection switch (61) for the electric device (D) accommodated in the center console (30) can be gained.

Abstract: A vehicle includes: a center tunnel which is formed on a floor panel so as to extend in a front-rear direction; a high-voltage battery which is disposed on the center tunnel; and a frame member which holds the high-voltage battery, wherein leg portions are provided on a bottom portion of the frame member so as to extend obliquely downwards, and wherein the frame member is fastened to inclined surfaces of the center tunnel via the leg portions.

Abstract: A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.

Abstract: A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.

Abstract: A cleaning method of a silicon oxide film forming apparatus for removing a deposit adhering to the inside of the silicon oxide film forming apparatus after a silicon oxide film is formed on a workpiece by supplying a process gas into a reaction chamber of the silicon oxide film forming apparatus. The cleaning method includes oxidizing the deposit adhering to the inside of the silicon oxide film forming apparatus by supplying an oxidizing gas into the reaction chamber, and cleaning the inside of the silicon oxide film forming apparatus by supplying a cleaning gas into the reaction chamber and removing the oxidized deposit.

Abstract: A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.

Abstract: A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

Abstract: A silicon oxide film forming method includes performing a set one or more times, the set including: a standby process in which a workpiece is accommodated into and recovered from a boat; a load process in which the workpiece accommodated in the boat is loaded into a reaction chamber; a silicon oxide film formation process in which a silicon oxide film is formed on the workpiece accommodated within the reaction chamber; and an unload process in which the workpiece having the silicon oxide film is unloaded from the reaction chamber. In at least one of the unload process, the standby process and the load process, a gas containing water vapor is supplied into the reaction chamber while an interior of the reaction chamber is heated.