Abstract: The smartphone (1) of the present invention includes: an object specifying section (12) for specifying, based on a contact position detected by an input section (20), at least one object which is displayed on a display section (30); and a file moving section (13) for, in a case where the at least one object is associated with a folder, moving a file stored in the folder to an outside of the folder.

Abstract: A smart phone (100) is configured so that, in a case where a first display position of an icon (6) is changed, a condition determining section (11) determines whether or not an icon other than the icon (6) is being displayed within a predetermined region that includes a second display position of the icon (6) to which second display position the first display position of the icon (6) has been changed, and in a case where the condition determining section (11) determines that the icon other than the icon (6) is not being displayed within the predetermined region, a partition line display section (12a) causes a partition line (1) to be displayed between the second display position of the icon (6) and a display position of another icon other than the icon (6).

Abstract: An exhaust gas purifying device for an internal combustion engine includes an inflow case provided with an inlet pipe, a catalyst case in which an oxidizing catalyst for dosing is housed, a filter case in which a soot filter is housed, and an outflow case provided with an outlet pipe, and is attached to an attached target at two attachment points mutually spaced in the axial direction of the cases. At one of the two attachment points, which is defined on the catalyst case, the catalyst case is firmly fixed. At the other attachment point, which is defined on the filter case, the filter case is attached slidably in the axial direction.

Abstract: Disclosed is a compound represented by Formula (I) or a pharmaceutically acceptable salt thereof: wherein R1 is 1: a C3-8 cycloalkyl C1-4 alkyl group, 2: a C7-14 aralkyl group, in which the aryl moiety thereof is optionally substituted with the same or different 1 to 3 groups selected from the group consisting of: (a) halogen, (b) C1-4 alkyl, which is optionally substituted with 1 to 3 fluorine atoms, (c) C1-4 alkoxy, which is optionally substituted with 1 to 3 fluorine atoms, and (d) C1-4 alkylcarbonyl, which is optionally substituted with C1-4 alkoxy, 3: a five-to ten-membered heteroaryl-C1-4 alkyl group, in which the heteroaryl moiety thereof is optionally substituted with the same or different 1 to 3 groups selected from the group consisting of: (a) halogen, and (b) C1-4 alkyl, or 4: a C6-10 aryl C2-6 alkenyl group; and R2 is a cyano group or a nitro group.

Abstract: An exhaust gas emission control system includes a cylindrical main body shell and an outlet shell that are detachably connected in series along an exhaust gas flow direction. The exhaust gas emission control system also includes a CSF provided in the main body shell, an insulating mat interposed between the main body shell and the CSF, a bulging portion provided at an end of the main body shell near the outlet shell, and a flare that enlarges toward the main body shell. The main body shell and the outlet shell are mutually connected by a fastener having a V-insert that bridges the bulging portion and the flare. An end of the CSF near the outlet shell projects beyond an end of the insulating mat toward the outlet shell while being positioned inside the end of the main body shell.

Abstract: Disclosed is a compound represented by Formula (I) or a pharmaceutically acceptable salt thereof: wherein R1 is 1: a C3-8 cycloalkyl C1-4 alkyl group, 2: a C7-14 aralkyl group, in which the aryl moiety thereof is optionally substituted with the same or different 1 to 3 groups selected from the group consisting of: (a) halogen, (b) C1-4 alkyl, which is optionally substituted with 1 to 3 fluorine atoms, (c) C1-4 alkoxy, which is optionally substituted with 1 to 3 fluorine atoms, and (d) C1-4 alkylcarbonyl, which is optionally substituted with C1-4 alkoxy, 3: a five- to ten-membered heteroaryl-C1-4 alkyl group, in which the heteroaryl moiety thereof is optionally substituted with the same or different 1 to 3 groups selected from the group consisting of: (a) halogen, and (b) C1-4 alkyl, or 4: a C6-10 aryl C2-6 alkenyl group; and R2 is a cyano group or a nitro group.

Abstract: An exhaust gas purifying device for an internal combustion engine includes an inflow case provided with an inlet pipe, a catalyst case in which an oxidizing catalyst for dosing is housed, a filter case in which a soot filter is housed, and an outflow case provided with an outlet pipe, and is attached to an attached target at two attachment points mutually spaced in the axial direction of the cases. At one of the two attachment points, which is defined on the catalyst case, the catalyst case is firmly fixed. At the other attachment point, which is defined on the filter case, the filter case is attached slidably in the axial direction.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

Abstract: A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion.

Abstract: A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

Abstract: A control unit is disclosed for controlling a refrigerating machine in such a way that a refrigerating power exceeding the required performance is secured while the control unit has a function of bypassing hot gas by means of a hot gas bypass line. A temperature-responsive valve is mounted in the hot gas bypass line in addition to a pressure regulating valve. If a preset temperature Tr of a brine becomes equal to or higher than a given temperature (0° C.), the temperature-responsive valve opens the bypass line. If the preset temperature Tr becomes lower than the given temperature, the temperature-responsive valve closes the bypass line.

Abstract: A temperature control system which performs control of an object whose temperature is to be controlled as accurately as possible. The system comprises: a chiller located in a fluid circulating and supplying system, for cooling a thermal fluid returning from a vacuum chamber, a first flow control valve located in the fluid circulating and supplying system in a position between the chiller and the vacuum chamber, a bypass passage for splitting and supplying thermal fluid returning from the vacuum chamber to a position between the first flow control valve and the vacuum chamber, before it reaches the chiller, a second flow control valve located in the bypass passage, and a halogen lamp heater located in the fluid circulating and supplying system in a position between a confluence point of the bypass passage and the vacuum chamber, for adjusting the temperature of the thermal fluid passing therethrough to a set temperature.

Abstract: A distance from the bottom of a mesa groove to an underlying pn junction exceeds the elongation of a depletion layer from the underlying pn junction that occurs when a voltage nearly equal to a target withstand voltage is applied, and a groove width of a section other than a corner of the mesa groove, that is, the groove width of a straight section, is nearly equal to the distance from the bottom of the mesa groove to the underlying pn junction.