Patents by Inventor Toshiyuki Kawaharamura
Toshiyuki Kawaharamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230253203Abstract: A method for producing a doping raw-material solution for film formation includes a step of firstly mixing a solute including a halogen-containing organic dopant compound or a dopant halide with a first solvent, but not with other solvents to prepare a dopant precursor solution separately from a film-forming raw material, where an acidic solvent is used as the first solvent. A method for producing a doping raw-material solution for film formation enables stable formation of a high-quality thin film having excellent electric characteristics.Type: ApplicationFiled: June 7, 2021Publication date: August 10, 2023Applicants: SHIN-ETSU CHEMICAL CO., LTD., KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATIONInventors: Hiroshi HASHIGAMI, Takenori WATABE, Takahiro SAKATSUME, Toshiyuki KAWAHARAMURA, Thai Giang DANG, Tatsuya YASUOKA
-
Patent number: 11555245Abstract: In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.Type: GrantFiled: June 18, 2015Date of Patent: January 17, 2023Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kyoto University, Kochi Prefectural Public University CorporationInventors: Takahiro Hiramatsu, Hiroyuki Orita, Toshiyuki Kawaharamura, Shizuo Fujita, Takayuki Uchida
-
Publication number: 20220411926Abstract: An atomizing apparatus for film formation, including: a raw-material container configured to accommodate a raw-material solution; a cylindrical member configured to spatially connect inside of the container to an outer unit, and disposed so a lower end of the cylindrical member does not touch a liquid surface of the solution in the container; an ultrasound generator having at least one ultrasound generation source; and a liquid tank where the ultrasound propagates to the raw-material solution through a middle solution. A center line of an ultrasound-emitting surface of the ultrasound generation source is designated u, the source is provided so an intersection P between line u and a plane containing a side wall surface of the cylindrical member and an extension thereof is located below a lower end point B of the cylindrical member. This provides an atomizing apparatus for film formation, enabling high-quality thin film formation with suppressed particle adhesion.Type: ApplicationFiled: February 18, 2021Publication date: December 29, 2022Applicants: SHIN-ETSU CHEMICAL CO., LTD., KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATIONInventors: Hiroshi HASHIGAMI, Toshiyuki KAWAHARAMURA
-
Publication number: 20220410199Abstract: An atomizing apparatus for film formation enabling high-quality thin film formation with suppressed particle adhesion, including: a raw-material container accommodating a raw-material solution; a cylindrical member connecting inside the raw-material container to an outer unit, and disposed so a lower end of the cylindrical member does not touch a liquid surface of the raw-material solution in the container; an ultrasound generator having at least one source emitting ultrasound; and a liquid tank where the ultrasound propagates the raw-material solution through a middle solution. The generation source is outside the liquid tank and has a center between a plane extending from an inner side wall of the raw-material container and a plane extending from an outer side wall of the cylindrical member. A center line of an ultrasound-emitting surface of the ultrasound generation source is designated as u, wherein the center line u does not intersect the cylindrical member side wall.Type: ApplicationFiled: February 18, 2021Publication date: December 29, 2022Applicants: SHIN-ETSU CHEMICAL CO., LTD., Kochi Prefectural Public University CorporationInventors: Hiroshi HASHIGAMI, Toshiyuki KAWAHARAMURA
-
Publication number: 20220270882Abstract: A switching includes a gallium nitride semiconductor and a gate insulation film. The gate insulation film is made of silicon oxide and disposed above the gallium nitride semiconductor layer. An interface between the gallium nitride insulation film and the gate insulation film is either free of a gallium oxide layer or provided with the gallium oxide layer with a thickness of 1 nanometer or smaller.Type: ApplicationFiled: February 2, 2022Publication date: August 25, 2022Inventors: Hidemoto TOMITA, Takashi OKAWA, Toshiyuki KAWAHARAMURA, Li LIU
-
Publication number: 20220271144Abstract: A method for manufacturing a nitride semiconductor device includes formation of a gate insulation film above a nitride semiconductor layer. The formation of the gate insulation film includes formation of silicon oxynitride film in contact with a surface of the nitride semiconductor layer. The formation of the silicon oxynitride film includes oxidation of a film source material having both of silicon and nitride in a molecule to form the silicon oxynitride film.Type: ApplicationFiled: February 2, 2022Publication date: August 25, 2022Inventors: Takashi OKAWA, Hidemoto TOMITA, Toshiyuki KAWAHARAMURA, Li Liu
-
Patent number: 10290762Abstract: Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method includes the steps of: turning a raw-material solution having a metallic element into a mist, to obtain a raw-material solution mist; turning a reaction aiding solution into a mist, to obtain an aiding-agent mist; feeding the raw-material solution mist and the aiding-agent mist into a mixing vessel, thereby mixing the raw-material solution mist and the aiding-agent mist, to obtain a mixed mist; and feeding the mixed mist onto a back surface of a substrate which is heated, to obtain a metal oxide film.Type: GrantFiled: June 18, 2015Date of Patent: May 14, 2019Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kochi Prefectural Public University Corporation, Kyoto UniversityInventors: Takahiro Hiramatsu, Hiroyuki Orita, Toshiyuki Kawaharamura, Shizuo Fujita, Takayuki Uchida
-
Publication number: 20180190859Abstract: Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method includes the steps of: turning a raw-material solution having a metallic element into a mist, to obtain a raw-material solution mist; turning a reaction aiding solution into a mist, to obtain an aiding-agent mist; feeding the raw-material solution mist and the aiding-agent mist into a mixing vessel, thereby mixing the raw-material solution mist and the aiding-agent mist, to obtain a mixed mist; and feeding the mixed mist onto a back surface of a substrate which is heated, to obtain a metal oxide film.Type: ApplicationFiled: June 18, 2015Publication date: July 5, 2018Applicants: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kochi Prefectural Public University Corporation, Kyoto UniversityInventors: Takahiro HIRAMATSU, Hiroyuki ORITA, Toshiyuki KAWAHARAMURA, Shizuo FUJITA, Takayuki UCHIDA
-
Publication number: 20180155837Abstract: In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.Type: ApplicationFiled: June 18, 2015Publication date: June 7, 2018Applicants: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kyoto University, Kochi Prefectural Public University CorporationInventors: Takahiro HIRAMATSU, Hiroyuki ORITA, Toshiyuki KAWAHARAMURA, Shizuo FUJITA, Takayuki UCHIDA
-
Patent number: 9954135Abstract: A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.Type: GrantFiled: July 11, 2013Date of Patent: April 24, 2018Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kyoto University, Kochi Prefectural Public University CorporationInventors: Takahiro Hiramatsu, Hiroyuki Orita, Takahiro Shirahata, Toshiyuki Kawaharamura, Shizuo Fujita
-
Patent number: 9574271Abstract: The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.Type: GrantFiled: September 2, 2009Date of Patent: February 21, 2017Assignees: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, KYOTO UNIVERSITYInventors: Hiroyuki Orita, Takahiro Shirahata, Akio Yoshida, Shizuo Fujita, Naoki Kameyama, Toshiyuki Kawaharamura
-
Publication number: 20160204301Abstract: A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.Type: ApplicationFiled: July 11, 2013Publication date: July 14, 2016Applicants: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, KYOTO UNIVERSITY, KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATIONInventors: Takahiro HIRAMATSU, Hiroyuki ORITA, Takahiro SHIRAHATA, Toshiyuki KAWAHARAMURA, Shizuo FUJITA
-
Patent number: 9279182Abstract: A film forming apparatus includes a first solution container, a second solution container, a reaction chamber, a first path, and a second path. The first solution container stores a source solution containing metal. The second solution container stores hydrogen peroxide. A substrate is in the reaction chamber, and the reaction chamber includes a heating unit that heats the substrate. The first path supplies a source solution from the first solution container to the reaction chamber. The second path supplies hydrogen peroxide from the second solution container to the reaction chamber.Type: GrantFiled: June 1, 2010Date of Patent: March 8, 2016Assignees: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, KYOTO UNIVERSITYInventors: Takahiro Shirahata, Hiroyuki Orita, Akio Yoshida, Shizuo Fujita, Toshiyuki Kawaharamura
-
Publication number: 20160047049Abstract: A method for forming a metal oxide film, the method including: forming a source solution containing metal into a mist, heating a substrate, supplying the source solution formed into a mist onto a first main surface of the substrate through a first supply path, and supplying hydrogen peroxide through a second path different from the first supply path onto the first main surface of the substrate, where the method further includes, in the following order, preliminarily preparing data showing a relationship among a molar ratio of an amount of the hydrogen peroxide to an amount of the zinc in the source solution, a carrier concentration of the metal oxide film, and a mobility of the metal oxide film, determining an amount of the hydrogen peroxide supplied with the data, and supplying the determined amount of the hydrogen peroxide through the second path onto the first main surface of the substrate.Type: ApplicationFiled: October 28, 2015Publication date: February 18, 2016Applicants: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, KYOTO UNIVERSITYInventors: Takahiro SHIRAHATA, Hiroyuki ORITA, Akio YOSHIDA, Shizuo FUJITA, Toshiyuki KAWAHARAMURA
-
Publication number: 20160047037Abstract: In a film formation method, a mist of a solution is sprayed onto a substrate to form a film on the substrate. A film formation is then suspended. The substrate is then exposed to plasma.Type: ApplicationFiled: April 17, 2013Publication date: February 18, 2016Applicants: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, KYOTO UNIVERSITY, Kochi Prefectural Public University CorporationInventors: Takahiro HIRAMATSU, Hiroyuki ORITA, Takahiro SHIRAHATA, Shizyo FUJITA, Toshiyuki KAWAHARAMURA
-
Publication number: 20130039843Abstract: A film forming apparatus (100) according to one embodiment of the present invention includes a first solution container (5A), a second solution container (5B), a reaction chamber (1), a first path (L1), and a second path (L2). The first solution container (5A) stores a source solution (10) containing metal. The second solution container (5B) stores hydrogen peroxide. A substrate (2) is disposed in the reaction chamber (1), and the reaction chamber (1) includes a heating unit (3) that heats the substrate. The first path (L1) supplies a source solution (11) from the first solution container (5A) to the reaction chamber (1). The second path (L2) supplies hydrogen peroxide from the second solution container (5B) to the reaction chamber (1).Type: ApplicationFiled: June 1, 2010Publication date: February 14, 2013Applicants: Kyoto University, Toshiba Mitsubishi-Electric Industrial Systems CorporationInventors: Takahiro Shirahata, Hiroyuki Orita, Akio Yoshida, Shizuo Fujita, Toshiyuki Kawaharamura
-
Publication number: 20120112187Abstract: The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.Type: ApplicationFiled: September 2, 2009Publication date: May 10, 2012Applicants: KYOTO UNIVERSITY, TOSHIBA MITSUBISHI-ELECTRIC INDUS. SYS. CORP.Inventors: Hiroyuki Orita, Takahiro Shirahata, Akio Yoshida, Shizuo Fujita, Naoki Kameyama, Toshiyuki Kawaharamura