Abstract: According to one embodiment, an electrospinning apparatus deposits a fiber on an electrode. The apparatus includes a transport section and a fiber deposition section. The transport section transports electrodes. The fiber deposition section deposits the fiber on first and second surfaces of the electrodes. The electrodes include coated and uncoated portions. The transport section transports the electrodes in a third direction in the fiber deposition section. The electrodes include first and second electrodes. The first electrode is positioned at one end in the second direction and transported so that the uncoated portion of the first electrode protrudes toward the one end side. The second electrode is positioned at other end in the second direction and transported so that the uncoated portion of the second electrode protrudes toward the other end side.

Abstract: According to the embodiments, a winding device is a device for manufacturing a winding body obtained by winding a plurality of band bodies including a first band body and a second band body. The winding device includes a core and an adjuster. The core winds a plurality of band bodies thereonto by rotating. The adjuster varies the size of an area of a region between a first position and a second position on an outer circumferential surface of the core, in which the first position is a position at which the first band body starts contacting a member on an inner side thereof, and the second position is a position at which the second band body starts contacting the first band body.

Abstract: According to one embodiment, an electrospinning apparatus deposits a fiber on an electrode. The apparatus includes a transport section and a fiber deposition section. The transport section transports electrodes. The fiber deposition section deposits the fiber on first and second surfaces of the electrodes. The electrodes include coated and uncoated portions. The transport section transports the electrodes in a third direction in the fiber deposition section. The electrodes include first and second electrodes. The first electrode is positioned at one end in the second direction and transported so that the uncoated portion of the first electrode protrudes toward the one end side. The second electrode is positioned at other end in the second direction and transported so that the uncoated portion of the second electrode protrudes toward the other end side.

Abstract: A rotary machine system (1) includes a first rotary machine (4) having a driving shaft (5) capable of being driven about an axis, a second rotary machine (2) having a driven shaft (3) rotatable about the axis and a bearing device (11) slidably supporting the driven shaft (3) on an axial end portion side with a pad surface (37) such that lubricating oil is supplied to the pad surface (37), a coupling unit (6) connecting the driving shaft (5) and the driven shaft (3) to each other such that rotation of the driving shaft (5) is transmitted to the driven shaft (3), and a baffle plate (7) disposed between the bearing device (11) and the coupling unit (6) and separating a space on the bearing device (11) side and a space on the coupling unit (6) side from each other.

Abstract: A rotary machine system (1) includes a first rotary machine (4) having a driving shaft (5) capable of being driven about an axis, a second rotary machine (2) having a driven shaft (3) rotatable about the axis and a bearing device (11) slidably supporting the driven shaft (3) on an axial end portion side with a pad surface (37) such that lubricating oil is supplied to the pad surface (37), a coupling unit (6) connecting the driving shaft (5) and the driven shaft (3) to each other such that rotation of the driving shaft (5) is transmitted to the driven shaft (3), and a baffle plate (7) disposed between the bearing device (11) and the coupling unit (6) and separating a space on the bearing device (11) side and a space on the coupling unit (6) side from each other.

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second columnar units, a wavelength conversion layer, a light emitting unit, a resin unit and an intermediate layer. The first columnar unit extends in a first direction. The second columnar unit is provided apart from the first columnar unit, and extends in the first direction. The wavelength conversion layer is provided apart from the first and second columnar units in the first direction. The light emitting unit includes first and second semiconductor layers, and a light emitting layer configured to emit a first light. The resin unit covers side surfaces along the first direction of the first and second columnar units and the light emitting unit, and a surface of the light emitting unit. The intermediate layer includes first and second portions, and has a thickness thinner than a peak wavelength of the first light.

Abstract: According to one embodiment, a spiral coating apparatus includes: a stage; a nozzle; a movement unit; a gas supply unit; a cleaning liquid supply unit; and a nozzle cleaner. The stage has a placement surface. The nozzle is configured to dispense a liquid onto a coating object placed on the stage. The movement unit is configured to move the nozzle relative to the stage. The gas supply unit is configured to supply a gas. The cleaning liquid supply unit is configured to supply a cleaning liquid. The nozzle cleaner has a gas supply port and a cleaning liquid supply port. The nozzle cleaner is configured to force the gas supplied by the gas supply unit from the gas supply port toward the nozzle and dispense the cleaning liquid supplied by the cleaning liquid supply unit from the cleaning liquid supply port toward the nozzle.

Abstract: According to one embodiment, a film formation apparatus is configured to coat a processing fluid on a surface of a substrate by supplying the fluid to the surface of the substrate from a nozzle while rotating the substrate and moving the nozzle and configured to form a film from the coated fluid by rotating the substrate. The apparatus includes: a holder configured to hold the substrate; a drive unit configured to rotate the holder; a processing fluid supply unit configured to supply the processing fluid onto the surface of the substrate held by the holder; and a controller configured to control at least the drive unit. The controller is configured to form the film from the coated processing fluid by rotating the holder at a second rotational speed, the second rotational speed being slower than a first rotational speed of the coating of the processing fluid.

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second columnar units, a wavelength conversion layer, a light emitting unit, a resin unit and an intermediate layer. The first columnar unit extends in a first direction. The second columnar unit is provided apart from the first columnar unit, and extends in the first direction. The wavelength conversion layer is provided apart from the first and second columnar units in the first direction. The light emitting unit includes first and second semiconductor layers, and a light emitting layer configured to emit a first light. The resin unit covers side surfaces along the first direction of the first and second columnar units and the light emitting unit, and a surface of the light emitting unit. The intermediate layer includes first and second portions, and has a thickness thinner than a peak wavelength of the first light.

Abstract: In a semiconductor device comprising an N channel MOS device, and P channel MOS device, or additionally comprising a MONOS device, provided with a gate insulating film and gate electrode formed on a semiconductor substrate or semiconductor layers of a SOI substrate, respectively, the gate insulating film of at least the P channel MOS device is made up of a dual-layer film consisting of a gate oxide film composed of a silicon dioxide film, and a gate silicon nitride film.

Abstract: A MOS device comprises a p-channel semiconductor device and n-channel semiconductor device, which are formed on top of an SOI substrate consisting of a supporting substrate, an insulation film, and a semiconductor layer patterned in a plurality of islands. In the peripheral region of respective islands of the semiconductor layer, boundary films, thicker than respective gate oxide films, are formed, and a boundary film formed on the semiconductor layer for the n-channel semiconductor device is thinner than another boundary film formed on the semiconductor layer for the p-channel semiconductor device. A field doped layer 11 may be preferably provided in the peripheral region of the semiconductor layer of the n-channel semiconductor device 41. In the MOS device fabricated as above, leakage current that occurs in a parasitic MOS region in an environment under exposure to radiation is reduced, ensuring stable operation.

Abstract: A MONOS nonvatile memory transistor includes a semiconductor substrate, a memory insulator film on the semiconductor substrate composed of a tunnel insulator film, a memory nitride film and a top oxide film, and a memory gate electrode on the memory insulator film. The tunnel insulator film is constituted of a silicon nitrided oxide film containing oxygen and nitrogen and an oxygen-rich silicon nitrided oxide film or a silicon oxide film to make the nitrogen content of the tunnel insulator film in the vicinity of its interface with the semiconductor substrate greater than its nitrogen content in the vicinity of its interface with the memory nitride film. By this, the barrier height of the tunnel insulator film to holes in the semiconductor substrate is lowered without lowering the barrier height thereof to holes captured on the memory nitride film side.

Abstract: A semiconductor device is provided by forming an insulating film on a supporting substrate and a semiconductor layer on the insulating film, forming an MOS semiconductor component having a source, a drain and a gate on the semiconductor layer, forming at least one of the source region of the semiconductor layer provided with the source and the drain region thereof provided with the drain to have greater thickness than a channel region of the semiconductor layer provided with a gate oxide film and a gate on the gate oxide film, and forming at least one of the source and the drain to be separated from the insulating film by the semiconductor layer of opposite conductivity type therefrom. A bulk layer of the same conductivity type as the semiconductor layer is provided in a thick region of the semiconductor layer. An MNOS or MONOS semiconductor non-volatile memory cell can be formed by replacing the gate oxide film with a memory gate insulating film consisting of a silicon oxide film and a silicon nitride film.

Abstract: A semiconductor device is provided by forming an insulating film on a supporting substrate and a semiconductor layer on the insulating film, forming an MOS semiconductor component having a source, a drain and a gate on the semiconductor layer, forming at least one of the source region of the semiconductor layer provided with the source and the drain region thereof provided with the drain to have greater thickness than a channel region of the semiconductor layer provided with a gate oxide film and a gate on the gate oxide film, and forming at least one of the source and the drain to be separated from the insulating film by the semiconductor layer of opposite conductivity type therefrom. A bulk layer of the same conductivity type as the semiconductor layer is provided in a thick region of the semiconductor layer. An MNOS or MONOS semiconductor non-volatile memory cell can be formed by replacing the gate oxide film with a memory gate insulating film consisting of a silicon oxide film and a silicon nitride film.

Abstract: An MOS device including a p-channel semiconductor device and an n-channel semiconductor device, which are formed on top of an SOI substrate consisting of a supporting substrate, an insulation film, and a semiconductor layer patterned in a plurality of islands. In the peripheral region of respective islands of the semiconductor layer, boundary films, thicker than respective gate oxide films, are formed, and a boundary film formed on the semiconductor layer for the n-channel semiconductor device is thinner than another boundary film formed on the semiconductor layer for the p-channel semiconductor device. A field doped layer 11 may be preferably provided in the peripheral region of the semiconductor layer of the n-channel semiconductor device 41. In the MOS device fabricated as above, leakage current that occurs in a parasitic MOS region in an environment under exposure to radiation is reduced, ensuring stable operation.

Abstract: A radiation dosimeter including a series circuit of an MONOS semiconductor and a resistor or an MOS or MONOS semiconductor device whose channel conductivity type is opposite from that of the first said MONOS semiconductor device. The MONOS semiconductor device is an electrically rewritable non-volatile memory cell having a gate insulating film consisting of a tunnel oxide film, a silicon nitride film and a top oxide film. The resistor is made of polycrystalline silicon which is little affected by exposure to radiation. The series circuit is connected between a source voltage and ground (GND) and a detection signal is obtained from the connection point between the members of the series circuits.

Abstract: On a semiconductor substrate (1) is provided an insulator film, on which is formed a lower gate electrode including a first lower gate electrode (5a) and a second lower gate electrode (5b), on which lower gate electrode is formed a lower gate insulator film. On the lower gate insulator film is disposed a device region (9), on which is disposed an upper gate electrode (13) by way of an upper gate insulator film. The device region (9) has island-shaped patterns. The first lower gate electrode (5a) is placed in substantially the middle part of the device region (9), while the second lower gate electrode (5b) is provided in parallel with the first lower gate electrode (5a) and at a boundary between the device region (9) and the insulator film. The upper gate electrode (13) is positioned orthogonal to the lower gate electrodes (5a, 5b). This configuration will make it possible to inhibit the occurrence of current leakage due to parasitic transistors.

Abstract: In a semiconductor nonvolatile storage element and a method of fabricating the same wherein the semiconductor nonvolatile storage element having a MONOS structure including a tunnel oxide film (3), a memory nitride film (5), a top oxide film (7) and a memory gate electrode film (9) which are sequentially layered on a semiconductor substrate (1) in this order within storage element regions, the pattern size of the memory gate electrode film (9) within the storage element region is smaller than that of the memory nitride film (7) within the same region. In such an arrangement, the operation of the semiconductor nonvolatile storage element is assured to thereby improve the reliability and data is rewriteable so many times.