Abstract: According to one embodiment, there is provided a chemical solution supply system including: a tank configured to store a chemical solution; a first pipe connected to the tank and configured to provide the chemical solution; a first filter unit connected to the first pipe and having a first filter configured to filter the chemical solution; a second pipe connected to the first filter unit and configured to provide the chemical solution filtered by the first filter; and a detector connected to the first pipe and configured to detect foreign matter in the chemical solution in the first pipe.

Abstract: A chemical solution supply system including: a first tank that stores a first chemical solution; a first pipe that is connected to the first tank and conveys the first chemical solution; a first filter unit that is connected to the first pipe and has a first filter through which the first chemical solution is filtered; a first valve that is provided in the first pipe between the first tank and the first filter unit; a second tank that stores a second chemical solution; and a second pipe that is connected to the second tank and the first pipe between the first filter unit and the first valve.

Abstract: A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.

Abstract: A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.