Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: There are provided a buffer circuit buffers data between a synchronous circuit and an asynchronous circuit, and a control method therefor. There are also provided an interface circuit that controls data transfer between a synchronous memory circuit and the asynchronous circuit, and a control method therefor, which are used in the buffer circuit and the control method therefor. A data buffer circuit that is interposed between an image processing system and a main system includes a one-port RAM, a control signal generating section, an subsequent cycle address generating section, and a first selector. The first selector selectively outputs the present cycle address to an address of the one-port RAM when an access to the one-port RAM is a write access, and selectively outputs the subsequent cycle address to the address of the one-port RAM when the access to the one-port RAM is a read access.

Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: There are provided a buffer circuit buffers data between a synchronous circuit and an asynchronous circuit, and a control method therefor. There are also provided an interface circuit that controls data transfer between a synchronous memory circuit and the asynchronous circuit, and a control method therefor, which are used in the buffer circuit and the control method therefor. A data buffer circuit that is interposed between an image processing system and a main system includes a one-port RAM, a control signal generating section, an subsequent cycle address generating section, and a first selector. The first selector selectively outputs the present cycle address to an address of the one-port RAM when an access to the one-port RAM is a write access, and selectively outputs the subsequent cycle address to the address of the one-port RAM when the access to the one-port RAM is a read access.

Abstract: A semiconductor device for easily changing an operating voltage of an I/O circuit. The I/O circuit includes a first I/O cell, which operates with a first high-potential power supply, and a second I/O cell, which operates with a second high-potential power supply. The I/O circuit includes a control circuit for selectively activating the first and second I/O cells according to a voltage selection signal. In the I/O circuit, a signal having a voltage according to an operating voltage of the selected I/O cell is generated.

Abstract: A memory having a plurality of memory cells and a plurality of redundant memory cells accesses a redundant memory cell in lieu of a failed memory cell. The memory is tested for failed memory cells. Addresses of detected failed memory cells are stored in a first set of registers, and addresses of redundant memory cells are stored in a second, corresponding set of registers. An external address is compared with the address stored in the first set of registers and if there is a match, the corresponding redundant memory cell address stored in the second register set is used to access the memory, in lieu of the external memory address.