Patents by Inventor Toshiyuki Nishimura

Toshiyuki Nishimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11383460
    Abstract: A desired shape can be easily realized, and a decrease in strength can be inhibited. A method for producing a composite material includes: an insertion step of inserting an inner member in which a second reinforcing fiber is impregnated with a resin into a space of an outer member that is formed of a woven first reinforcing fiber extending in an undulating manner, the outer member including an opening that is provided at at least one end portion and the space that communicates with the opening; and a composite material forming step of forming a composite material in which the outer member and the inner member are joined to each other by curing the resin of the inner member to join the outer member and the inner member to each other.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: July 12, 2022
    Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Sota Kamo, Kiyoka Takagi, Naomoto Ishikawa, Hideki Horizono, Wataru Nishimura, Toshiyuki Takayanagi, Nobuyuki Kamihara, Naoaki Fujiwara, Tsukasa Katsumata, Kazuki Ohashi
  • Publication number: 20120070247
    Abstract: An object of the present invention is to reduce the fastening time and to obtain a predetermined fastening force and to suppress the loosening of a screw.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 22, 2012
    Applicants: Sanohatsu Co., Ltd., Union Seimitsu Co., Ltd.
    Inventors: Tadashi Tashima, Toshiyuki Nishimura
  • Patent number: 7283405
    Abstract: A semiconductor memory device able to read out data at a high speed continuously, provided with, corresponding to a plurality of banks, current address registers for holding addresses for reading data of cell arrays, reserved address registers able to receive in advance and hold reserved addresses for next read operations from the outside, and bank control circuits for making the current address registers hold reserved addresses held in the reserved address registers, making the data be read out, and making the data latch circuits hold the data when the data read out from the cell arrays of the banks by addresses held in the current address registers and held in the data latch circuits become able to be transferred to the outside, and a signal processing system relating to the same.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: October 16, 2007
    Assignee: Sony Corporation
    Inventors: Hidetoshi Yamanaka, Toshiyuki Nishimura, Shigeru Atsumi, Daisuke Yoshioka
  • Patent number: 7186391
    Abstract: The present invention provides a lanthanum sulfide or cerium sulfide sintered compact usable as a thermoelectric conversion material having a high Seebeck coefficient. The sintered compact has a chemical composition of La2S3 or Ce2S3, and a crystal structure consisting of a mixture of beta and gamma phases having a Seebeck coefficient higher than that of the crystal structure otherwise being in gamma single-phase. The sintered compact is produced by preparing a beta-phase La2S3 or alpha-phase Ce2S3 powder of raw material having a high purity with a suppressed carbon impurity concentration and a given range of oxygen concentration, charging the raw material into a carbon die having an inner surface covered with an h-BN applied thereon, and hot-pressing the charged material under vacuum to form a mixture of beta and gamma phases having a high Seebeck coefficient.
    Type: Grant
    Filed: November 17, 2000
    Date of Patent: March 6, 2007
    Assignees: Japan Science and Technology Agency, National Institute for Materials Science
    Inventors: Yoichiro Uemura, Mamoru Mitomo, Toshiyuki Nishimura, Shinji Hirai, Kazuyoshi Shimakage
  • Publication number: 20070040206
    Abstract: A high-dielectric material which is especially useful as a material for a high-capacitance capacitor and which has a high dielectric constant is provided. The high-dielectric material is composed of a sintered body of a rare-earth sulfide, the high-dielectric material having a crystal structure of tetragonal ? type, a chemical composition represented by Ln2S3 (where Ln represents a rare-earth metal), a frequency domain within the range of 0.5 kHz to 1,000 kHz, and a value of relative dielectric constant of more than 1,000 at room temperature.
    Type: Application
    Filed: March 22, 2004
    Publication date: February 22, 2007
    Inventors: Shinji Hirai, Toshiyuki Nishimura, Yoichiro Uemura, Shigenori Morita, Michihiro Ohta, Kazumasa Igarashi
  • Publication number: 20060201161
    Abstract: A cooling device for a heat-generating electronic component such as a semiconductor integrated circuit element is provided. In particular, a cooling device using a thermoelectric conversion material is provided. A cooling device for an electronic component includes a thermoelectric conversion material disposed between two electrodes that function as a cathode and an anode and are electrically short-circuited. The thermoelectric conversion material is either a p-type material or an n-type material or a combination of p-type and n-type materials arranged alternately in series. This cooling device is brought into contact with an electronic component requiring cooling so that one electrode side in contact with the thermoelectric conversion material becomes a low-temperature side and the other electrode side becomes a high-temperature side.
    Type: Application
    Filed: December 26, 2003
    Publication date: September 14, 2006
    Inventors: Shinji Hirai, Toshiyuki Nishimura, Yoichiro Uemura, Shigenori Morita, Kazumasa Igarashi
  • Patent number: 6773247
    Abstract: A die used for molding an electronic component with resin includes a fixed, top die and a movable, bottom die and at least has a surface contacting a melted resin material that is electroplated with nickel-tungsten alloy. This plating can provide releaseability of a resin-molded body and the like superior to hard-chromium plating to allow an ejector pin to efficiently eject and release the resin-molded body from the die.
    Type: Grant
    Filed: November 2, 2000
    Date of Patent: August 10, 2004
    Assignees: Towa Corporation, Shimizu Co., Ltd.
    Inventors: Michio Osada, Keiji Maeda, Yoshihisa Kawamoto, Yoshiji Shimizu, Toshiyuki Nishimura, Susumu Yamahara
  • Patent number: 6737378
    Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: May 18, 2004
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Naoto Hirosaki, Toshiyuki Nishimura, Yoshinobu Yamamoto, Mamoru Mitomo
  • Publication number: 20030139278
    Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
    Type: Application
    Filed: October 1, 2002
    Publication date: July 24, 2003
    Applicant: Natl Institute for Research in Inorganic
    Inventors: Naoto Hirosaki, Toshiyuki Nishimura, Yoshinobu Yamamoto, Mamoru Mitomo
  • Patent number: 6579819
    Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
    Type: Grant
    Filed: March 2, 2001
    Date of Patent: June 17, 2003
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Naoto Hirosaki, Toshiyuki Nishimura, Yoshinobu Yamamoto, Mamoru Mitomo
  • Publication number: 20020045530
    Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a LU4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % LU2O3 and point C: 16 mol % SiO2-84 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—LU2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % LU2O3 and point C: 60 mol % SiO2-40 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4-SiO2-LU2O3 system.
    Type: Application
    Filed: March 2, 2001
    Publication date: April 18, 2002
    Applicant: National Institute for Research in Inorganic Materials
    Inventors: Naoto Hirosaki, Toshiyuki Nishimura, Yoshinobu Yamamoto, Mamoru Mitomo
  • Patent number: 5672553
    Abstract: A superplastic silicon nitride sintered body which is a sintered body of silicon nitride and which has superplasticity such that when a compression or tensile stress of from 30 to 2000 kg/cm.sup.2 is applied thereto at a temperature within a range of from 1350.degree. to 1650.degree. C., it deforms at a deformation rate of from 10.sup.-4 /sec to 10.sup.-1 /sec.
    Type: Grant
    Filed: August 15, 1996
    Date of Patent: September 30, 1997
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Mamoru Mitomo, Hideki Hirotsuru, Hisayuki Suematsu, Toshiyuki Nishimura
  • Patent number: 4377671
    Abstract: In a process for producing a rubbery olefinic copolymer which comprises random-copolymerizing at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) of the catalyst is a solution of a solid titanium halide in a hydrocarbon solvent, a halogenated hydrocarbon solvent or a mixture of both, said solid titanium halide being rendered soluble in said solvent.
    Type: Grant
    Filed: July 7, 1981
    Date of Patent: March 22, 1983
    Assignee: Japan EP Rubber Co., Ltd.
    Inventors: Kenya Makino, Hideo Sakurai, Masaru Watanabe, Toshiyuki Nishimura
  • Patent number: 4366297
    Abstract: In a process for producing a rubber olefin copolymer which comprises random copolymerization of at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) is a liquid product obtained by treating a titanium tetrahalide of the general formula TiX.sub.4 in which X represents Cl, Br or I in a hydrocarbon, a halogenated hydrocarbon or a mixture of both in the presence of an ether with at least one member selected from the group consisting of (1) an organoaluminum compound, (2) an organomagnesium compound and (3) a combination of hydrogen and at least one metal or metal compound selected from the group consisting of metals of Group IB, IIB, IVB and VIII of the periodic table, compounds of metals of Group VIII of the periodic table, cuprous chloride, titanium hydride and zirconium hydride.
    Type: Grant
    Filed: October 23, 1980
    Date of Patent: December 28, 1982
    Assignee: Japan EP Rubber Co., Ltd.
    Inventors: Kenya Makino, Hideo Sakurai, Masaru Watanabe, Toshiyuki Nishimura
  • Patent number: 4356160
    Abstract: In a process for producing a titanium trihalide by reducing a titanium tetrahalide with hydrogen, the improvement wherein the reduction is carried out in an organic solvent in the presence of an ether and at least one member of the group consisting of metals of Groups IB, IIB, IVB and VIII of the periodic table and compounds of these materials.
    Type: Grant
    Filed: April 16, 1981
    Date of Patent: October 26, 1982
    Assignee: Japan EP Rubber Co., Ltd.
    Inventors: Kenya Makino, Hieo Sakurai, Masaru Watanabe, Toshiyuki Nishimura