Abstract: An object of the present invention is to reduce the fastening time and to obtain a predetermined fastening force and to suppress the loosening of a screw.

Abstract: A semiconductor memory device able to read out data at a high speed continuously, provided with, corresponding to a plurality of banks, current address registers for holding addresses for reading data of cell arrays, reserved address registers able to receive in advance and hold reserved addresses for next read operations from the outside, and bank control circuits for making the current address registers hold reserved addresses held in the reserved address registers, making the data be read out, and making the data latch circuits hold the data when the data read out from the cell arrays of the banks by addresses held in the current address registers and held in the data latch circuits become able to be transferred to the outside, and a signal processing system relating to the same.

Abstract: The present invention provides a lanthanum sulfide or cerium sulfide sintered compact usable as a thermoelectric conversion material having a high Seebeck coefficient. The sintered compact has a chemical composition of La2S3 or Ce2S3, and a crystal structure consisting of a mixture of beta and gamma phases having a Seebeck coefficient higher than that of the crystal structure otherwise being in gamma single-phase. The sintered compact is produced by preparing a beta-phase La2S3 or alpha-phase Ce2S3 powder of raw material having a high purity with a suppressed carbon impurity concentration and a given range of oxygen concentration, charging the raw material into a carbon die having an inner surface covered with an h-BN applied thereon, and hot-pressing the charged material under vacuum to form a mixture of beta and gamma phases having a high Seebeck coefficient.

Abstract: A high-dielectric material which is especially useful as a material for a high-capacitance capacitor and which has a high dielectric constant is provided. The high-dielectric material is composed of a sintered body of a rare-earth sulfide, the high-dielectric material having a crystal structure of tetragonal ? type, a chemical composition represented by Ln2S3 (where Ln represents a rare-earth metal), a frequency domain within the range of 0.5 kHz to 1,000 kHz, and a value of relative dielectric constant of more than 1,000 at room temperature.

Abstract: A cooling device for a heat-generating electronic component such as a semiconductor integrated circuit element is provided. In particular, a cooling device using a thermoelectric conversion material is provided. A cooling device for an electronic component includes a thermoelectric conversion material disposed between two electrodes that function as a cathode and an anode and are electrically short-circuited. The thermoelectric conversion material is either a p-type material or an n-type material or a combination of p-type and n-type materials arranged alternately in series. This cooling device is brought into contact with an electronic component requiring cooling so that one electrode side in contact with the thermoelectric conversion material becomes a low-temperature side and the other electrode side becomes a high-temperature side.

Abstract: A die used for molding an electronic component with resin includes a fixed, top die and a movable, bottom die and at least has a surface contacting a melted resin material that is electroplated with nickel-tungsten alloy. This plating can provide releaseability of a resin-molded body and the like superior to hard-chromium plating to allow an ejector pin to efficiently eject and release the resin-molded body from the die.

Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.

Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.

Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.

Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a LU4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % LU2O3 and point C: 16 mol % SiO2-84 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—LU2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % LU2O3 and point C: 60 mol % SiO2-40 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4-SiO2-LU2O3 system.

Abstract: A superplastic silicon nitride sintered body which is a sintered body of silicon nitride and which has superplasticity such that when a compression or tensile stress of from 30 to 2000 kg/cm.sup.2 is applied thereto at a temperature within a range of from 1350.degree. to 1650.degree. C., it deforms at a deformation rate of from 10.sup.-4 /sec to 10.sup.-1 /sec.

Abstract: In a process for producing a rubbery olefinic copolymer which comprises random-copolymerizing at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) of the catalyst is a solution of a solid titanium halide in a hydrocarbon solvent, a halogenated hydrocarbon solvent or a mixture of both, said solid titanium halide being rendered soluble in said solvent.

Abstract: In a process for producing a rubber olefin copolymer which comprises random copolymerization of at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) is a liquid product obtained by treating a titanium tetrahalide of the general formula TiX.sub.4 in which X represents Cl, Br or I in a hydrocarbon, a halogenated hydrocarbon or a mixture of both in the presence of an ether with at least one member selected from the group consisting of (1) an organoaluminum compound, (2) an organomagnesium compound and (3) a combination of hydrogen and at least one metal or metal compound selected from the group consisting of metals of Group IB, IIB, IVB and VIII of the periodic table, compounds of metals of Group VIII of the periodic table, cuprous chloride, titanium hydride and zirconium hydride.

Abstract: In a process for producing a titanium trihalide by reducing a titanium tetrahalide with hydrogen, the improvement wherein the reduction is carried out in an organic solvent in the presence of an ether and at least one member of the group consisting of metals of Groups IB, IIB, IVB and VIII of the periodic table and compounds of these materials.