Abstract: A configuration simulating method for a layer deposited on a silicon wafer comprising the steps of: (a) generating a string of modeling data, obtained by connecting coordinate points on a contour of a section, wherein the section is obtained by cutting a plane perpendicular to an open surface of a cylindrical contact hole, for modeling a configuration of said cylindrical contact hole formed within said silicon wafer; (b) extracting flux vectors, flowing into a predetermined one of said coordinate points on the string of modeling data, by analyzing a flux vector of particles to be deposited on said silicon wafer, wherein said particles are present in a gas phase; (c) deriving an intersection of the straight line extended from said coordinate point in the direction of said flux vector; (d) judging whether said flux vector becomes null due to a shadow effect related to said cylindrical contact hole; (e) moving from said predetermined one of said coordinate points to another of said coordinate points correspondin

Abstract: A form simulation device comprising a bulk plasma analytical unit making an analysis of a bulk plasma region and calculating potential, density of particles and change of sheath length with time within plasma when RF bias is given there, a sheath plasma analytical unit deciding the type of incident particle on the basis of the obtained particle density, a surface reaction calculation unit deciding absorbed material on the surface of the material to be etched, which the incident particle collides with and deciding the type of reaction between the absorbed material and the incident particle decided by the sheath plasma analytical unit, and a form calculation unit calculating the form of the material to be etched depending on the type of reaction decided by said surface reaction calculation unit.

Abstract: An apparatus synchronizes a voice coder and a voice decoder which are of the vector-coding type in order to prevent a false synchronization even when a signal having the same period as a string of synchronizing bits is inputted. A noise component adding unit adds a noise component to an input voice signal. Therefore, even if the input voice signal has the same period as that of a string of synchronizing bits and is completely periodic, the periodicity of the input voice signal is lost by the added noise component. Based on the input voice signal which is no longer periodic, a vector-coding unit, a quantizing signal vector generating unit, and a code book index transmitting unit generate code book indexes and transmit the generated code book indexes to a voice decoder. Therefore, the voice decoder is prevented from developing a false synchronization.

Abstract: In a profile simulation of a thin film deposited on a substrate by sputtering, inverse trajectories from an area concerned of the substrate to a target are calculated by Monte Carlo method in order to reduce time required for the profile simulation. With trajectories arriving to the target and their generation probabilities, the profile simulation is performed applying a string model.

Abstract: A method and apparatus for producing a high-melting-point and high-toughness metal, comprising: reducing a high-melting point and high-toughness metal chloride with an activated metal to form a high-melting-point and high-toughness sponge metal in a reducing vessel arranged sideways relative to a condensing vessel, wherein the condensing vessel is integrally connected to the reducing vessel through a conduit, and at least one of the reducing vessel and/or the condensing vessel is supported so as to move with thermal expansion of said conduit; and measuring a weight-change of the vessel supported so as to move with thermal expansion of the conduit to estimate the degree of progress of a separating and recovering process on the basis of the detected weight-change when nonreacted activated metal and its chloride remaining in the sponge metal formed in the reducing vessel are recovered into the condensing vessel by vacuum separation.

Abstract: A high-density of semiconductor device is disclosed, which comprises a semiconductor substrate of a first conductivity type, first and second semiconductor regions of a second conductivity provided in the semiconductor substrate, the first and second semiconductor regions defining a channel region therebetween at the surface of the substrate, an insulator film disposed on the channel region, a conductive layer formed on the insulator film, means for producing depletion layers from the first and second semiconductor regions in such a manner that the depletion layers contact with each other to isolate the channel region from the substrate, means for selectively feeding majority carriers of the substrate to the channel region at a density higher than that of the substrate, and a means for detecting the existence of the accumulation of the majority carriers in the channel region.