Abstract: Disclosed herein is a coil component that includes a coil part embedded in a magnetic element body. The coil part has a structure in which plural interlayer insulating films and plural conductor layers having a coil pattern are alternately stacked. At least one of the conductor layers has a clearance area having no coil pattern and extending radially outward from a center axis of the coil part. The magnetic element body includes a first magnetic resin layer provided in an inner diameter area of the coil part, a second magnetic resin layer provided in a radially outside area of the coil part, and a fifth magnetic resin layer filled in the clearance area and contacting the first and second magnetic resin layers.

Abstract: Dust Da containing zinc and iron is charged in a rotative cylindrical kiln base body 11 of an indirect-heating rotary kiln 10 and is subjected to heat treatment in the kiln base body so that zinc contained in the dust is volatilized. The volatilized zinc is guided to a treatment device 30 through an exhaust pipe 31 disposed at a discharge part 16 of the rotary kiln and is recovered. A residue Db resulting from the treatment in the kiln base body is transferred from a residue outlet 16b disposed at the discharge part 16 of the rotary kiln to a burner device 40, in which the residue is combusted and heated.

Abstract: A temperature-sensitive element including an element main body and a pair of lead wires that is drawn out from the element main body; a case accommodating the temperature-sensitive element and having a heat transfer surface configured to come into contact with a measurement object for temperature; a pair of lead frames electrically connected with each of the lead wires and drawn out from the case; and a filler covering the temperature-sensitive element accommodated in the case and the lead frames and holding the temperature-sensitive element and the lead frames in the case while maintaining a state of the connection.

Abstract: A temperature-sensitive element including an element main body and a pair of lead wires that is drawn out from the element main body; a case accommodating the temperature-sensitive element and having a heat transfer surface configured to come into contact with a measurement object for temperature; a pair of lead frames electrically connected with each of the lead wires and drawn out from the case; and a filler covering the temperature-sensitive element accommodated in the case and the lead frames and holding the temperature-sensitive element and the lead frames in the case while maintaining a state of the connection.

Abstract: An optical apparatus of an aspect of the present invention includes: a plurality of semiconductor laser elements each of which emits laser light; an optical fiber which has a core which guides the laser light; and an imaging section which causes a plurality of beams of laser light to form an image on an incidence end surface of the single core, the incidence end surface having an outer shape which has a first side defining a width of the core and a second side defining a height of the core, a plurality of spots which are formed on the incidence end surface having respective long axes which are aligned with each other, the long axes of the plurality of spots being aligned with the first side or the second side.

Abstract: To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of Inx1Ga1-x1N (0<x1?1) and a second buffer layer expressed by an equation of Inx2Ga1-x2N (0?x2<1, x2<x1) alternately laminated, an In composition x1 of the first buffer layer is changed, and the In composition x1 of at least one layer of the first buffer layers is higher than an In composition of the active layer, and a method for producing the same.

Abstract: To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of Inx1Ga1-x1N (0<x1?1) and a second buffer layer expressed by an equation of Inx2Ga1-x2N (0?x2<1, x2<x1) alternately laminated, an In composition x1 of the first buffer layer is changed, and the In composition x1 of at least one layer of the first buffer layers is higher than an In composition of the active layer, and a method for producing the same.

Abstract: There is provided an optical measurement analysis device capable of applying light to substantially the entire surface of a to-be-analyzed object for improving the analysis accuracy. The optical measurement analysis device according to the present embodiment includes a container, a light source, a light irradiation unit, a light reception unit, a spectroscope unit, and an analyzing unit for analyzing an optical spectrum obtained by the spectroscope unit. The container has an inner wall adapted to reflect light reflected by the to-be-analyzed object and light transmitted therethrough.

Abstract: An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.

Abstract: A semiconductor laser device has an active layer which is divided into two regions in the direction of a resonator, i.e., a light-amplifying region and a saturable absorber region. The light-amplifying region and the saturable absorber region are produced to allow the semiconductor laser device to be in a bistable state. For the light-amplifying region and the saturable absorber region respectively, p-electrodes are separately and independently formed. N-electrodes are provided in relation to the p-electrodes. From one of the p-electrodes, a current which is modulated with noise added thereto is injected.

Abstract: On a surface of an Si layer of a substrate, a plurality of optical waveguides are formed that extend linearly in the Y-axis direction and that are separated from each other by a predetermined spacing in the X-axis direction. These optical waveguides each have a width that monotonously increases in the X-axis direction such that an amount of change of the equivalent refractive index of optical waveguides per unit length is constant in the X-axis direction. In this way, an optical isolator is obtained that can operate for an input light in any state of polarization and that can remove a returned light in any state of polarization without allowing the light to return to an input portion.

Abstract: An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.

Abstract: A small variable demultiplexer capable of improving yield and stabilizing characteristics can be obtained. The small variable demultiplexer includes an SiO2 layer serving as a base medium, a waveguide array, a heater serving as an external refractive index modulating unit and a heat sink serving as the external refractive index modulating unit. The waveguide array is arranged on the SiO2 layer. The waveguide array is formed of the plurality of Si photonic wire waveguides serving as waveguides. The heater and the heat sink provide a refractive index gradient which is formed in the direction perpendicular to the extension direction of the Si photonic wire waveguide, and is variable depending on the plurality of Si photonic wire waveguides. The Si photonic wire waveguide has a one-dimensional photonic crystal structure in the extension direction of the Si photonic wire waveguide.

Abstract: A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.

Abstract: An OBO planar waveguide device includes an Si substrate, an SiO2 layer formed on the Si substrate, and a plurality of Si optical waveguides provided on the Si substrate in parallel to each other. A heater and a heat sink are provided on opposing side end portions of the Si substrate respectively. As a result of a function of the heater and the heat sink, gradient of temperature distribution of the Si substrate is formed in a direction in which the plurality of Si optical waveguides are aligned. Thermal resistance of the Si substrate in the direction in which the gradient of temperature distribution is formed is greater than 20 K/W and lower than 2000 K/W. The OBO planar waveguide device attaining reduced power consumption is thus obtained.

Abstract: A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

Abstract: A gallium nitride semiconductor laser device has an active layer (6) made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer (5) and a p-type cladding layer (9). The active layer (6) is composed of two quantum well layers (14) and a barrier layer (15) interposed between the quantum well layers, and constitutes an oscillating section of the semiconductor laser device. The quantum well layers (14) and the barrier layer (15) have thicknesses of, preferably, 10 nm or less. In this semiconductor laser device, electrons and holes can be uniformly distributed in the two quantum well layers (14). In addition, electrons and holes are effectively injected into the quantum well layers from which electrons and holes have already been disappeared by recombination. Consequently, the semiconductor laser device has an excellent laser oscillation characteristic.

Abstract: An OBO planar waveguide device includes an Si substrate, an SiO2 layer formed on the Si substrate, and a plurality of Si optical waveguides provided on the Si substrate in parallel to each other. A heater and a heat sink are provided on opposing side end portions of the Si substrate respectively. As a result of a function of the heater and the heat sink, gradient of temperature distribution of the Si substrate is formed in a direction in which the plurality of Si optical waveguides are aligned. Thermal resistance of the Si substrate in the direction in which the gradient of temperature distribution is formed is greater than 20 K/W and lower than 2000 K/W. The OBO planar waveguide device attaining reduced power consumption is thus obtained.

Abstract: A photonic crystal and a producing method thereof are provided. The photonic crystal includes at least two media of different refractive indices formed on a semiconductor substrate. One of the media is periodically arranged in another one of the media. The photonic crystal has a cleaved surface on its side. The directions of primitive translation vectors representing the periodic arrangement directions of the one medium are at desired angles with the cleaved surface. Preferably, the direction of at least one of the primitive translation vectors is in parallel with the cleaved surface.

Abstract: A small variable demultiplexer capable of improving yield and stabilizing characteristics can be obtained. The small variable demultiplexer includes an SiO2 layer serving as a base medium, a waveguide array, a heater serving as an external refractive index modulating unit and a heat sink serving as the external refractive index modulating unit. The waveguide array is arranged on the SiO2 layer. The waveguide array is formed of the plurality of Si photonic wire waveguides serving as waveguides. The heater and the heat sink provide a refractive index gradient which is formed in the direction perpendicular to the extension direction of the Si photonic wire waveguide, and is variable depending on the plurality of Si photonic wire waveguides. The Si photonic wire waveguide has a one-dimensional photonic crystal structure in the extension direction of the Si photonic wire waveguide.