Patents by Inventor Toshiyuki Okumura

Toshiyuki Okumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11105688
    Abstract: A temperature-sensitive element including an element main body and a pair of lead wires that is drawn out from the element main body; a case accommodating the temperature-sensitive element and having a heat transfer surface configured to come into contact with a measurement object for temperature; a pair of lead frames electrically connected with each of the lead wires and drawn out from the case; and a filler covering the temperature-sensitive element accommodated in the case and the lead frames and holding the temperature-sensitive element and the lead frames in the case while maintaining a state of the connection.
    Type: Grant
    Filed: January 16, 2017
    Date of Patent: August 31, 2021
    Assignee: SHIBAURA ELECTRONICS CO., LTD.
    Inventors: Tatsuyuki Suzuki, Toshiyuki Okumura
  • Publication number: 20190120697
    Abstract: A temperature-sensitive element including an element main body and a pair of lead wires that is drawn out from the element main body; a case accommodating the temperature-sensitive element and having a heat transfer surface configured to come into contact with a measurement object for temperature; a pair of lead frames electrically connected with each of the lead wires and drawn out from the case; and a filler covering the temperature-sensitive element accommodated in the case and the lead frames and holding the temperature-sensitive element and the lead frames in the case while maintaining a state of the connection.
    Type: Application
    Filed: January 16, 2017
    Publication date: April 25, 2019
    Inventors: Tatsuyuki Suzuki, Toshiyuki Okumura
  • Publication number: 20150309235
    Abstract: An optical apparatus of an aspect of the present invention includes: a plurality of semiconductor laser elements each of which emits laser light; an optical fiber which has a core which guides the laser light; and an imaging section which causes a plurality of beams of laser light to form an image on an incidence end surface of the single core, the incidence end surface having an outer shape which has a first side defining a width of the core and a second side defining a height of the core, a plurality of spots which are formed on the incidence end surface having respective long axes which are aligned with each other, the long axes of the plurality of spots being aligned with the first side or the second side.
    Type: Application
    Filed: April 22, 2015
    Publication date: October 29, 2015
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Yoshinobu KAWAGUCHI, Yoshiyuki TAKAHIRA, Koji TAKAHASHI, Kyohko MATSUDA, Toshiyuki OKUMURA
  • Patent number: 9099586
    Abstract: To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of Inx1Ga1-x1N (0<x1?1) and a second buffer layer expressed by an equation of Inx2Ga1-x2N (0?x2<1, x2<x1) alternately laminated, an In composition x1 of the first buffer layer is changed, and the In composition x1 of at least one layer of the first buffer layers is higher than an In composition of the active layer, and a method for producing the same.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: August 4, 2015
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masaya Ueda, Yoshihiro Ueta, Yuichi Sano, Toshiyuki Okumura
  • Publication number: 20130134388
    Abstract: To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of Inx1Ga1-x1N (0<x1?1) and a second buffer layer expressed by an equation of Inx2Ga1-x2N (0?x2<1, x2<x1) alternately laminated, an In composition x1 of the first buffer layer is changed, and the In composition x1 of at least one layer of the first buffer layers is higher than an In composition of the active layer, and a method for producing the same.
    Type: Application
    Filed: November 19, 2012
    Publication date: May 30, 2013
    Inventors: Masaya UEDA, Yoshihiro UETA, Yuichi SANO, Toshiyuki OKUMURA
  • Publication number: 20130010294
    Abstract: There is provided an optical measurement analysis device capable of applying light to substantially the entire surface of a to-be-analyzed object for improving the analysis accuracy. The optical measurement analysis device according to the present embodiment includes a container, a light source, a light irradiation unit, a light reception unit, a spectroscope unit, and an analyzing unit for analyzing an optical spectrum obtained by the spectroscope unit. The container has an inner wall adapted to reflect light reflected by the to-be-analyzed object and light transmitted therethrough.
    Type: Application
    Filed: June 22, 2012
    Publication date: January 10, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Kyoko MATSUDA, Toshiyuki Okumura
  • Patent number: 7864412
    Abstract: An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: January 4, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kyoko Matsuda, Toshiyuki Okumura
  • Patent number: 7515624
    Abstract: A semiconductor laser device has an active layer which is divided into two regions in the direction of a resonator, i.e., a light-amplifying region and a saturable absorber region. The light-amplifying region and the saturable absorber region are produced to allow the semiconductor laser device to be in a bistable state. For the light-amplifying region and the saturable absorber region respectively, p-electrodes are separately and independently formed. N-electrodes are provided in relation to the p-electrodes. From one of the p-electrodes, a current which is modulated with noise added thereto is injected.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: April 7, 2009
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kyoko Matsuda, Toshiyuki Okumura
  • Publication number: 20090003769
    Abstract: On a surface of an Si layer of a substrate, a plurality of optical waveguides are formed that extend linearly in the Y-axis direction and that are separated from each other by a predetermined spacing in the X-axis direction. These optical waveguides each have a width that monotonously increases in the X-axis direction such that an amount of change of the equivalent refractive index of optical waveguides per unit length is constant in the X-axis direction. In this way, an optical isolator is obtained that can operate for an input light in any state of polarization and that can remove a returned light in any state of polarization without allowing the light to return to an input portion.
    Type: Application
    Filed: May 23, 2008
    Publication date: January 1, 2009
    Inventors: Yasuo FUKAI, Toshiyuki Okumura
  • Publication number: 20080174856
    Abstract: An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.
    Type: Application
    Filed: January 22, 2008
    Publication date: July 24, 2008
    Inventors: Kyoko Matsuda, Toshiyuki Okumura
  • Patent number: 7356218
    Abstract: A small variable demultiplexer capable of improving yield and stabilizing characteristics can be obtained. The small variable demultiplexer includes an SiO2 layer serving as a base medium, a waveguide array, a heater serving as an external refractive index modulating unit and a heat sink serving as the external refractive index modulating unit. The waveguide array is arranged on the SiO2 layer. The waveguide array is formed of the plurality of Si photonic wire waveguides serving as waveguides. The heater and the heat sink provide a refractive index gradient which is formed in the direction perpendicular to the extension direction of the Si photonic wire waveguide, and is variable depending on the plurality of Si photonic wire waveguides. The Si photonic wire waveguide has a one-dimensional photonic crystal structure in the extension direction of the Si photonic wire waveguide.
    Type: Grant
    Filed: December 2, 2005
    Date of Patent: April 8, 2008
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshimichi Kato, Toshiyuki Okumura
  • Patent number: 7274010
    Abstract: A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: September 25, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kyoko Matsuda, Toshiyuki Okumura
  • Patent number: 7251390
    Abstract: An OBO planar waveguide device includes an Si substrate, an SiO2 layer formed on the Si substrate, and a plurality of Si optical waveguides provided on the Si substrate in parallel to each other. A heater and a heat sink are provided on opposing side end portions of the Si substrate respectively. As a result of a function of the heater and the heat sink, gradient of temperature distribution of the Si substrate is formed in a direction in which the plurality of Si optical waveguides are aligned. Thermal resistance of the Si substrate in the direction in which the gradient of temperature distribution is formed is greater than 20 K/W and lower than 2000 K/W. The OBO planar waveguide device attaining reduced power consumption is thus obtained.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: July 31, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yasuo Fukai, Toshiyuki Okumura
  • Patent number: 7199398
    Abstract: A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.
    Type: Grant
    Filed: November 20, 2003
    Date of Patent: April 3, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tomoki Ono, Shigetoshi Ito, Toshiyuki Okumura, Hirokazu Mouri, Kyoko Matsuda, Toshiyuki Kawakami, Takeshi Kamikawa, Yoshihiko Tani
  • Patent number: 7183569
    Abstract: A gallium nitride semiconductor laser device has an active layer (6) made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer (5) and a p-type cladding layer (9). The active layer (6) is composed of two quantum well layers (14) and a barrier layer (15) interposed between the quantum well layers, and constitutes an oscillating section of the semiconductor laser device. The quantum well layers (14) and the barrier layer (15) have thicknesses of, preferably, 10 nm or less. In this semiconductor laser device, electrons and holes can be uniformly distributed in the two quantum well layers (14). In addition, electrons and holes are effectively injected into the quantum well layers from which electrons and holes have already been disappeared by recombination. Consequently, the semiconductor laser device has an excellent laser oscillation characteristic.
    Type: Grant
    Filed: May 13, 2005
    Date of Patent: February 27, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Toshiyuki Okumura
  • Publication number: 20070025658
    Abstract: An OBO planar waveguide device includes an Si substrate, an SiO2 layer formed on the Si substrate, and a plurality of Si optical waveguides provided on the Si substrate in parallel to each other. A heater and a heat sink are provided on opposing side end portions of the Si substrate respectively. As a result of a function of the heater and the heat sink, gradient of temperature distribution of the Si substrate is formed in a direction in which the plurality of Si optical waveguides are aligned. Thermal resistance of the Si substrate in the direction in which the gradient of temperature distribution is formed is greater than 20 K/W and lower than 2000 K/W. The OBO planar waveguide device attaining reduced power consumption is thus obtained.
    Type: Application
    Filed: August 1, 2006
    Publication date: February 1, 2007
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Yasuo Fukai, Toshiyuki Okumura
  • Patent number: 7088902
    Abstract: A photonic crystal and a producing method thereof are provided. The photonic crystal includes at least two media of different refractive indices formed on a semiconductor substrate. One of the media is periodically arranged in another one of the media. The photonic crystal has a cleaved surface on its side. The directions of primitive translation vectors representing the periodic arrangement directions of the one medium are at desired angles with the cleaved surface. Preferably, the direction of at least one of the primitive translation vectors is in parallel with the cleaved surface.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: August 8, 2006
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshimichi Katoh, Toshiyuki Okumura
  • Publication number: 20060120665
    Abstract: A small variable demultiplexer capable of improving yield and stabilizing characteristics can be obtained. The small variable demultiplexer includes an SiO2 layer serving as a base medium, a waveguide array, a heater serving as an external refractive index modulating unit and a heat sink serving as the external refractive index modulating unit. The waveguide array is arranged on the SiO2 layer. The waveguide array is formed of the plurality of Si photonic wire waveguides serving as waveguides. The heater and the heat sink provide a refractive index gradient which is formed in the direction perpendicular to the extension direction of the Si photonic wire waveguide, and is variable depending on the plurality of Si photonic wire waveguides. The Si photonic wire waveguide has a one-dimensional photonic crystal structure in the extension direction of the Si photonic wire waveguide.
    Type: Application
    Filed: December 2, 2005
    Publication date: June 8, 2006
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Yoshimichi Kato, Toshiyuki Okumura
  • Patent number: 7026698
    Abstract: A driver circuit substrate is prepared and a mirror substrate is so provided as to be placed on the driver circuit substrate. Nine mirror elements are lad out on the mirror substrate in a 3×3 matrix form. The mirror elements are prepared by a microelectromechanical system (MEMS). An insulating substrate is provided on the driver circuit substrate and a driver circuit which drives a light reflecting mirror element is provided on the insulating substrate. The driver circuit substrate is connected to the mirror substrate via a resin layer of a thermosetting adhesive or the like.
    Type: Grant
    Filed: May 11, 2004
    Date of Patent: April 11, 2006
    Assignee: Denso Corporation
    Inventor: Toshiyuki Okumura
  • Patent number: 7015565
    Abstract: A gallium nitride type semiconductor laser device includes: a substrate; and a layered structure formed on the substrate. The layered structure at least includes an active layer of a nitride type semiconductor material which is interposed between a pair of nitride type semiconductor layers each functioning as a cladding layer or a guide layer. A current is injected into a stripe region in the layered structure having a width smaller than a width of the active layer. The width of the stripe region is in a range between about 0.2 ?m and about 1.8 ?m.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: March 21, 2006
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Toshiyuki Okumura