Abstract: On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A.

Abstract: On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A.

Abstract: The present invention aims to provide a magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer.

Abstract: On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A.

Abstract: A granule-type magnetoresistive material is used to form a MR component, which is equipped in a magnetic head, or the like. When placing the magnetoresistive material in the external magnetic field, the electric resistance is altered responsive to a variation of the external magnetic field. In order to increase a magnetic-field sensitivity, the magnetoresistive material is composed of an alloy whose atomic composition is expressed by a chemical formula of (Co.sub.1-x Fe.sub.x).sub.y Ag.sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55 and 0.24.ltoreq.y.ltoreq.0.35; or another chemical formula of (Co.sub.1-x Fe.sub.x).sub.y (Ag.sub.1-z Cu.sub.z).sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55, 0.24.ltoreq.y.ltoreq.0.35 and z.ltoreq.0.14.

Abstract: In production of alloy for lead frames used in semiconductor integration circuits, a Fe-base alloy of a specified composition is annealed at a temperature above its recrystallization point and, thereafter, worked at 13 to 40% degree of working in order to subject the resultant elongation by thermal expansion close to those of Si, SiC and Si.sub.3 N.sub.4 over wide range of temperature.