Abstract: A black steel sheet having a sufficiently small coating thickness to allow the welding of the steel sheet, and yet exhibiting an excellently black surface. It is a steel sheet having a surface plated with zinc or a zinc alloy, and carrying a chromate film formed on its plated surface, and a black film formed on the chromate film from a composition comprising specific proportions of a thermosetting resin and a black dye, which are both soluble in an organic solvent, and having a sufficiently small thickness. The composition may further contain a solid lubricant, or a granular rust-inhibitive pigment, or both.

Abstract: A colored steel sheet having a coating thickness which is sufficiently small to permit welding therethrough, and yet exhibiting an excellently colored and lustrous surface. It is a steel sheet having a surface plated with zinc or a zinc alloy, and carrying a chromate film formed on its plated surface, and a colored film formed on the chromate film from a composition comprising specific proportions of a thermosetting resin and a dye, which are both soluble in an organic solvent. The composition may further contain a solid lubricant, or a granular rust-inhibitive pigment, or both. The colored film has a specific range of thickness, and a color other than black.

Abstract: A semiconductor memory device has a sense amplifier which is constructed with a level shift circuit having an input which senses the change in a data line from an initial precharged level to a level near the vicinity of the supply voltage level which corresponds to data reading amounts from a memory cell during the reading mode of operation of the memory. The level shift circuit, in response to a memory cell reading signals, provides a level shifted outpout to the input terminal of a differential sense amplifier circuit, the level shifted output being in the vicinity of the operating point of the differential sense amplifier circuit. The level shift circuit includes a current amplifier having an output terminal that is formed with a series connecting node of a current amplifying transistor and a current source.

Abstract: A semiconductor memory device has a sense amplifier which is constructed with a level shift circuit having an input which senses the change in a data line from an initial precharged level to a level near the vicinity of the supply voltage level which corresponds to data reading amounts from a memory cell during the reading mode of operation of the memory. The level shift circuit, in response to a memory cell reading signals, provides a level shifted output to the input terminal of a differential sense amplifier circuit, the level shifted output being in the vicinity of the operating point of the differential sense amplifier circuit. The level shift circuit includes a current amplifier having an output terminal that is formed with a series connecting node of a current amplifying transistor and a current source.