Abstract: A representation learning apparatus executing: calculating a latent vector Sx in a latent space of the target data x using a first model parameter, calculate a non-interest latent vector Zx in a latent space of an non-interest feature included in the target data x and a non-interest latent vector Zb in the latent space of a non-interest data using a second model parameter, calculate a similarity S1 obtained by correcting a similarity between the latent vector Sx and its representative value S?x by a similarity between the latent vector Zx and its representative value Z?x, and a similarity S2 between the latent vector Zb and its representative value Z?b, and update the first and/or the second model parameter based on the loss function including the similarity S1 and S2.

Abstract: An embodiment is a semiconductor device includes a silicon carbide layer having a first plane and a second plane facing the first plane; a gate electrode; an aluminum nitride layer located between the silicon carbide layer and the gate electrode, the aluminum nitride layer containing an aluminum nitride crystal; a first insulating layer located between the silicon carbide layer and the aluminum nitride layer; and a second insulating layer located between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Abstract: A semiconductor device of an embodiment includes a silicon carbide layer having first and second plane, the silicon carbide layer including trench having a first portion and a second portion, the second portion having a width smaller than the first portion, an n-type first silicon carbide region, a p-type second silicon carbide region between the first silicon carbide region and the first plane, a p-type third silicon carbide region between the second silicon carbide region and the first plane and having a p-type impurity concentration lower than the second silicon carbide region, an n-type fourth silicon carbide region between the third silicon carbide region and the first plane, and an n-type fifth silicon carbide region between the second portion and the second silicon carbide region and having an n-type impurity concentration higher than the first silicon carbide region; and a gate electrode in the trench.

Abstract: An embodiment of a semiconductor device including a silicon carbide layer having a first and a second planes; a first silicon carbide region of first conductivity type in the silicon carbide layer; a second silicon carbide region of second conductivity type in the silicon carbide layer between the first silicon carbide region and the first plane; a third silicon carbide region of the first conductivity type in the silicon carbide layer located between the second silicon carbide region and the first plane; a first electrode located on a side of the first plane; a second electrode located on a side of the second plane; a gate electrode; an aluminum nitride layer containing an aluminum nitride crystal between the second silicon carbide region and the gate electrode; and an insulating layer between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Abstract: A semiconductor device of an embodiment includes a silicon carbide layer having first and second plane, the silicon carbide layer including trench having a first portion and a second portion, the second portion having a width smaller than the first portion, an n-type first silicon carbide region, a p-type second silicon carbide region between the first silicon carbide region and the first plane, a p-type third silicon carbide region between the second silicon carbide region and the first plane and having a p-type impurity concentration lower than the second silicon carbide region, an n-type fourth silicon carbide region between the third silicon carbide region and the first plane, and an n-type fifth silicon carbide region between the second portion and the second silicon carbide region and having an n-type impurity concentration higher than the first silicon carbide region; and a gate electrode in the trench.

Abstract: A semiconductor device according to an embodiment includes a silicon carbide layer having a first and second plane, first and second trench extending in first direction, and in the silicon carbide layer, n-type first region, p-type second region between the n-type first region and the first plane and between the first and second trench, p-type fifth region covering bottom of the first trench, p-type sixth region covering bottom of the second trench, n-type seventh region between the fifth region and the second region, n-type eighth region between the sixth and second regions, p-type ninth regions contacting the fifth and second regions, and p-type tenth regions contacting the sixth region and the second region, the ninth and tenth regions repeatedly disposed in the first direction, and a line segment connecting the ninth region and the tenth region is oblique with respect to second direction perpendicular to the first direction.

Abstract: An embodiment is a semiconductor device includes a silicon carbide layer having a first plane and a second plane facing the first plane; a gate electrode; an aluminum nitride layer located between the silicon carbide layer and the gate electrode, the aluminum nitride layer containing an aluminum nitride crystal; a first insulating layer located between the silicon carbide layer and the aluminum nitride layer; and a second insulating layer located between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Abstract: An embodiment of a semiconductor device including a silicon carbide layer having a first and a second planes; a first silicon carbide region of first conductivity type in the silicon carbide layer; a second silicon carbide region of second conductivity type in the silicon carbide layer between the first silicon carbide region and the first plane; a third silicon carbide region of the first conductivity type in the silicon carbide layer located between the second silicon carbide region and the first plane; a first electrode located on a side of the first plane; a second electrode located on a side of the second plane; a gate electrode; an aluminum nitride layer containing an aluminum nitride crystal between the second silicon carbide region and the gate electrode; and an insulating layer between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Abstract: A semiconductor device according to an embodiment includes a silicon carbide layer having a first and second plane, first and second trench extending in first direction, and in the silicon carbide layer, n-type first region, p-type second region between the n-type first region and the first plane and between the first and second trench, p-type fifth region covering bottom of the first trench, p-type sixth region covering bottom of the second trench, n-type seventh region between the fifth region and the second region, n-type eighth region between the sixth and second regions, p-type ninth regions contacting the fifth and second regions, and p-type tenth regions contacting the sixth region and the second region, the ninth and tenth regions repeatedly disposed in the first direction, and a line segment connecting the ninth region and the tenth region is oblique with respect to second direction perpendicular to the first direction.

Abstract: A heat-peelable pressure-sensitive adhesive sheet comprises: a base material; and a thermo-expandable pressure-sensitive adhesive layer containing thermo-expandable microspheres, the thermo-expandable pressure-sensitive adhesive layer having a surface to be adhered to an adherend, wherein the surface of the thermo-expandable pressure-sensitive adhesive layer before subjecting to heating has a centerline average roughness of greater than 0.4 ?m, and has a convex portion resulting from the thermo-expandable microspheres.

Abstract: A method of overheating and releasing a chip cut piece from a thermal release type pressure sensitive adhesive sheet is a method by which a chip cut piece stuck onto a thermal release type pressure sensitive adhesive sheet having a base material, and a thermally expandable microsphere-containing thermally expandable pressure sensitive adhesive layer provided on a surface of the base material is thermally released from the thermal release type pressure sensitive adhesive sheet and which is characterized by including the step of overheating while restraining the overheat and release type pressure sensitive adhesive sheet to thereby release the chip cut piece. A means for restraining the thermal release type pressure sensitive adhesive sheet may be an absorption means using suction or may be a bonding means using an adhesive agent.

Abstract: A heat-peelable adhesive sheet which shows small increase in the degree of contamination caused by a heat treatment for lowering an adhesive force is disclosed. The heat-peelable pressure sensitive adhesive sheet comprises a heat-expandable layer containing heat-expandable microspheres and expanding upon heating, and a non-heat expandable pressure-sensitive adhesive layer formed on at least one side thereof. The heat-peelable pressure-sensitive adhesive sheet can achieve the desired adhesive properties such as an excellent adhesive force before heating and also show a quick lowering of the adhesive force upon heating. Further, it shows small increase in the degree of contamination due to the treatment for lowering the adhesive force. Due to those characteristics, the heat-peelable pressure-sensitive adhesive sheet is practically applicable to, for example, the production of electronic parts made of thinner semiconductor wafers.

Abstract: A heat-peelable adhesive sheet which comprises a substrate and, formed on at least one side thereof, a heat-expandable layer containing heat-expandable microspheres and an adhesive layer comprising an adhesive substance and in which the substrate has heat resistance and stretchability can be used to cut an adherend so as to form and secure a sufficient space between the resultant cut pieces and can withstand a heat treatment for expanding the heat-expandable layer. Consequently, the adhesive sheet can heighten the operating efficiency and working efficiency in the step of separating and recovering the cut pieces.

Abstract: A heat-peelable pressure-sensitive adhesive sheet which ensures an efficient contact area even in case where the area of an adherend to be adhered is decreased and thus makes it possible to avoid adhesion failures such as chip-scattering or chipping. The heat-peelable pressure-sensitive adhesive sheet comprises a substrate and a heat-expandable pressure-sensitive adhesive layer containing heat-expandable microspheres, formed on at least one side of the substrate, wherein the surface of the heat-expandable pressure-sensitive adhesive layer before heating has a center line average roughness of 0.4 ?m or less.

Abstract: An energy-beam-curable thermal-releasable pressure-sensitive adhesive sheet having, on at least one side of a base material, an energy-beam-curable thermo-expandable viscoelastic layer containing thermo-expandable microspheres and a pressure-sensitive adhesive layer stacked in this order. The pressure-sensitive adhesive layer has a thickness of about 0.1 to 10 ?m and can be formed from a pressure-sensitive adhesive. The energy-beam-curable thermo-expandable viscoelastic layer, on the other hand, can be formed from a tacky substance. The energy-beam-curable thermal-releasable pressure-sensitive adhesive sheet according to the invention has adhesion enough to withstand a carrying step of an adherend, causes neither winding up of the adhesive nor chipping upon cutting and facilitates peeling and collection of cut pieces after cutting. In addition, it exhibits low contamination on the adherend after peeling.

Abstract: A heat-peelable adhesive sheet which comprises a substrate and, formed on at least one side thereof, a heat-expandable layer containing heat-expandable microspheres and an adhesive layer comprising an adhesive substance and in which the substrate has heat resistance and stretchability can be used to cut an adherend so as to form and secure a sufficient space between the resultant cut pieces and can withstand a heat treatment for expanding the heat-expandable layer. Consequently, the adhesive sheet can heighten the operating efficiency and working efficiency in the step of separating and recovering the cut pieces.

Abstract: An energy-beam-curable thermal-releasable pressure-sensitive adhesive sheet has, on at least one side of a base material, an energy-beam-curable viscoelastic layer and a thermo-expandable pressure-sensitive adhesive layer containing thermo-expandable microspheres stacked in this order. The energy-beam-curable viscoelastic layer is, for example, composed of a composition of an organic viscoelastic body and an energy-beam-curable compound or an energy-beam-curable resin. The energy-beam-curable viscoelastic layer has a thickness of about 5 to 300 ?m or may be not greater than the maximum particle size of the thermo-expandable microspheres. The energy-beam-curable thermal-releasable pressure-sensitive adhesive layer according to the invention has adhesion enough to withstand a carrying step of an adherend, causes neither winding up of the adhesive nor chipping upon cutting and facilitates peeling and collection of cut pieces after cutting.

Abstract: A heat-peelable pressure-sensitive adhesive sheet which, even when used for temporarily fixing electronic parts having poor resistance to static electricity, such as magnetic heads, is effective in preventing the yield of such electronic parts from being reduced by electrostatic breakage, while ensuring its functions of adhesiveness before heating and peelability after heating. The heat-peelable pressure-sensitive adhesive sheet comprises a substrate and formed on at least one side thereof a heat-expandable pressure-sensitive adhesive layer containing heat-expandable microspheres, wherein the heat-expandable pressure-sensitive adhesive layer has a surface resistivity of 1012 ?/? or lower. In this heat-peelable pressure-sensitive adhesive sheet, the heat-expandable pressure-sensitive adhesive layer before heating may have a center line average surface roughness of 2 ?m or less and a maximum surface roughness of 5 ?m or less.

Abstract: A heat-peelable adhesive sheet which comprises a substrate and, formed on at least one side thereof, a heat-expandable layer containing heat-expandable microspheres and an adhesive layer comprising an adhesive substance and in which the substrate has heat resistance and stretchability can be used to cut an adherend so as to form and secure a sufficient space between the resultant cut pieces and can withstand a heat treatment for expanding the heat-expandable layer. Consequently, the adhesive sheet can heighten the operating efficiency and working efficiency in the step of separating and recovering the cut pieces.

Abstract: A method of overheating and releasing a chip cut piece from a thermal release type pressure sensitive adhesive sheet is a method by which a chip cut piece stuck onto a thermal release type pressure sensitive adhesive sheet having a base material, and a thermally expandable microsphere-containing thermally expandable pressure sensitive adhesive layer provided on a surface of the base material is thermally released from the thermal release type pressure sensitive adhesive sheet and which is characterized by including the step of overheating while restraining the overheat and release type pressure sensitive adhesive sheet to thereby release the chip cut piece. A means for restraining the thermal release type pressure sensitive adhesive sheet may be an absorption means using suction or may be a bonding means using an adhesive agent.