Abstract: There is provided a manufacturing method for a thermal conductive layer, with which a thermal conductive layer having a thermal diffusivity of 3.0×10?7 m2s?1 or more is manufactured on a support by using a composition for forming a thermal conductive layer, the composition containing a resin, a filler, and a solvent and having a concentration of solid contents of less than 90% by mass, the manufacturing method including a discharge step of discharging the composition toward the support; and a solvent amount reduction step of reducing a solvent amount in the composition such that a first solvent amount reduction time taken after the composition is discharged until the concentration of solid contents in the composition reaches 90% by mass on the support is 10 seconds or more for each position on the support.

Abstract: There is provided a manufacturing method for a thermal conductive layer, with which a thermal conductive layer having a thermal diffusivity of 3.0×10?7 m2s?1 or more is manufactured on a support by using a composition for forming a thermal conductive layer, the composition containing a resin, a filler, and a solvent and having a concentration of solid contents of less than 90% by mass, the manufacturing method including a discharge step of discharging the composition toward the support; and a solvent amount reduction step of reducing a solvent amount in the composition such that a first solvent amount reduction time taken after the composition is discharged until the concentration of solid contents in the composition reaches 90% by mass on the support is 10 seconds or more for each position on the support.

Abstract: There is provided a photosensitive transparent composition for a color filter of a solid-state imaging device, containing (A) a photopolymerization initiator, (B) a polymerizable compound, and (C) an alkali-soluble resin, wherein the cured film obtained from the photosensitive transparent composition has a refractive index of 1.60 to 1.90 for light at a wavelength of 633 nm.

Abstract: A photosensitive composition contains (A) a hollow or porous particle, (B) a compound capable of generating an active species upon irradiation with an actinic ray or radiation, and (C) a compound capable of changing in the solubility for an alkali developer by the action of the active species.

Abstract: The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.

Abstract: There is provided a photosensitive transparent composition for a color filter of a solid-state imaging device, containing (A) a photopolymerization initiator, (B) a polymerizable compound, and (C) an alkali-soluble resin, wherein the cured film obtained from the photosensitive transparent composition has a refractive index of 1.60 to 1.90 for light at a wavelength of 633 nm.

Abstract: A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, which liquid includes: a quaternary ammonium cation; a corrosion inhibiting agent; a polymer compound having a sulfo group at a terminal; inorganic particles; and an organic acid, the pH of the polishing liquid being in the range of 1 to 7.

Abstract: A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.

Abstract: The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.

Abstract: A photosensitive composition contains (A) a hollow or porous particle, (B) a compound capable of generating an active species upon irradiation with an actinic ray or radiation, and (C) a compound capable of changing in the solubility for an alkali developer by the action of the active species.

Abstract: The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.

Abstract: A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.

Abstract: A polishing liquid is provided which is used for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including surface modified particles that include organic polymer particles having at least one inorganic atom selected from the group consisting of Ti, Al, Zr and Si bonded to the organic polymer particles via an oxygen atom present on a surface of the organic polymer particles, an organic acid, an azole compound having at least two carboxyl groups, and an oxidizing agent, the polishing liquid having a pH of from 1 to 7; and a polishing method for polishing a barrier layer of a semiconductor integrated circuit is also provided.

Abstract: A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, which liquid includes: a quaternary ammonium cation; a corrosion inhibiting agent; a polymer compound having a sulfo group at a terminal; inorganic particles; and an organic acid, the pH of the polishing liquid being in the range of 1 to 7.

Abstract: The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.