Abstract: A fault diagnosis method utilizing a fault diagnosis system for diagnosing a photovoltaic module by estimating a fault location, the fault diagnosis system including a signal generator for generating and inputting an input signal into a positive terminal or a negative terminal of the photovoltaic module, a waveform observer for observing a reflected output signal from an open end or the fault location, a diagnosis unit for estimating the fault location based on the output signal, a conductive body, and an alignment unit for controlling the positions of the conductive body and/or the photovoltaic module. The diagnosis method includes controlling the positions of the conductive body and/or the photovoltaic module, observing the output signal of the input signal, and estimating the fault location based on two reflected output signals of input signals inputted into the positive terminal and the negative terminal of the photovoltaic module.

Abstract: A fault diagnosis method utilizing a fault diagnosis system for diagnosing a photovoltaic module by estimating a fault location, the fault diagnosis system including a signal generator for generating and inputting an input signal into a positive terminal or a negative terminal of the photovoltaic module, a waveform observer for observing a reflected output signal from an open end or the fault location, a diagnosis unit for estimating the fault location based on the output signal, a conductive body, and an alignment unit for controlling the positions of the conductive body and/or the photovoltaic module. The diagnosis method includes controlling the positions of the conductive body and/or the photovoltaic module, observing the output signal of the input signal, and estimating the fault location based on two reflected output signals of input signals inputted into the positive terminal and the negative terminal of the photovoltaic module.

Abstract: A non-volatile semiconductor memory device is provided which includes a data memory block having a plurality of non-volatile memory cells, in which data in the plurality of non-volatile memory cells of the data memory block is erased before writing data into the non-volatile memory cells of the data memory block. The non-volatile semiconductor memory device further includes: an erase complete data memory region having a plurality of non-volatile memory cells which are subjected to erasure simultaneously with the plurality of non-volatile memory cells of the data memory block; a writing element for writing erase complete data including a plurality of bits into the erase complete data memory region, after erasing data in the non-volatile memory cells of the data memory block and data in the non-volatile memory cells of the erase complete data memory region; and a reading element for reading the erase complete data in the erase complete data memory region.