Abstract: A fault prediction device capable of predicting an accurate deterioration state is provided. A fault prediction device for predicting fault of a target device whose deterioration state transitions with elapse of time includes autoencoders AED1 to AED4 respectively corresponding to deterioration states of the target device. The autoencoder AED2 corresponding to a first deterioration state determines whether the target device exists in the first deterioration state or not based on a state signal indicating a state of the target device. In a case where it is determined that the target device does not exist in the first deterioration state, the autoencoder AED3 corresponding to a second deterioration state determines whether the target device exists in the second deterioration state or not based on the state signal.

Abstract: A semiconductor device includes a field effect transistor (LDMOSFET) having a field relaxing part. This field relaxing part has a trench, a charge capture film, and an insulating film. The trench is formed in a semiconductor substrate. The charge capture film is formed only on the side wall of the trench. The insulating film is formed over the charge capture film, and is embedded in the trench.

Abstract: An impurity quantity transfer device and method for conducting a numerical analysis of a semiconductor device diffusion process, applying integral interpolation of diffusion impurity quantities and obtaining an accurate impurity concentration distribution with a reduced pseudo diffusion, even at a region with a sharp impurity concentration gradient. A control volume region is generated to bridge a plurality of mesh elements of an interpolation destination mesh, and a subdivisional control volume is generated for an interpolation source mesh. The impurity quantities are summed for the grid points on the source mesh, and a initial impurity concentration is generated for the control volume region. The initial impurity concentration is multiplied by a conversion coefficient to produce a formal impurity concentration. From the formal impurity concentration, an impurity quantity corresponding to each grid point on the destination mesh is calculated.

Abstract: A method for generating well-posed meshes with high speed and accuracy is provided. An initial value of a judgement condition value and number of times of designated trials are set. Mesh points to be moved are selected by random numbers and the selected mesh points are placed in a manner that its destination place is determined by random numbers or mesh points are moved in a direction in which an evaluation function calculated in a region near each mesh point is locally minimized. An amount of change in evaluation functions is calculated. If the amount of change is negative, the movement is permitted and, if not negative, is permitted in a permission probability. Judgement condition values and random number mesh selecting probability are decreased and re-placement is repeated when the rate of decrease of the evaluation function becomes not more than a specified value.

Abstract: Measurement of pulse CV characteristics and an SIMS measurement of a semiconductor substrate are made at the same position. An SIMS profile is calibrated by a method of least squares so that a dose amount determined from the SIMS profile coincide with a dose amount determined from the concentration profile of a carrier which is calculated from the pulse CV characteristics in a range where accuracy of the carrier concentration is secured. In the case where plural impurities are introduced, a measurement of pulse CV and SIMS measurement are made and the distribution of impurity concentration and the distribution of carrier concentration are estimated by simulation every time when an impurity is introduced. When an impurity is introduced in a high concentration, an impurity of the inverse conductive-type to that of the former impurity is introduced.

Abstract: A method, computer system, and a computer readable medium is disclosed for generating triangular meshes for the purpose of performing high-speed generation of triangular meshes with boundary protection layers. One use for the invention is in simulations such as for semiconductor process and device simulations. The invention provides a way to suppress the volume of triangular meshes generated, by limiting the domains that destroy the boundary protection layer, thus, improving the speed of shape analysis. First, shape data is received and then, the next step is defining a boundary protection layer comprising orthogonal meshes matched locally with boundary line segments. After that, mesh points are placed inside domains separated by at least a reference distance from the boundary protection layer.

Abstract: Measurement of pulse CV characteristics and an SIMS measurement of a semiconductor substrate are made at the same position. An SIMS profile is calibrated by a method of least squares so that a dose amount determined from the SIMS profile coincide with a dose amount determined from the concentration profile of a carrier which is calculated from the pulse CV characteristics in a range where accuracy of the carrier concentration is secured. In the case where plural impurities are introduced, a measurement of pulse CV and SIMS measurement are made and the distribution of impurity concentration and the distribution of carrier concentration are estimated by simulation every time when an impurity is introduced. When an impurity is introduced in a high concentration, an impurity of the inverse conductive-type to that of the former impurity is introduced.

Abstract: In a method for simulating a concentration of impurities within a semiconductor device while the semiconductor device is being oxidized, the semiconductor device is divided into a triangular mesh configuration having grids arranged in triangles. One of the triangles is divided into three control volumes, and each of the control volumes includes a circumcenter and one grid of a respective one of the triangles.

Abstract: A mesh generation device comprising a boundary protective layer generating unit, a mesh point positioning unit, a triangular mesh generation unit and a triangular mesh checking unit, characterized in that the triangular mesh generating unit generates triangular meshes restrictively in the region where the boundary protective layer may be destroyed by some triangular meshes as the first stage, and generates triangular meshes in the remaining region as the second stage, and that the triangular mesh checking unit checks whether or not the generated triangular meshes are destroying the boundary protective layer after the completion of the processing in the first stage by the triangular mesh generating unit.