Abstract: An object of the invention is to provide a photocurable inkjet ink useful for producing microlenses and electronic components, and having low volatility. The photocurable inkjet ink of the invention contains polyfunctional (meth)acrylate (A), monofunctional (meth)acrylate (B) having nonvolatility of 75% or more and viscosity (25° C.) of 1 to 70 mPa·s in evaluation method 1, and photopolymerization initiator (C); and having viscosity (at 25° C.) of 1 to 100 mPa·s.

Abstract: A face authentication device 1 includes a three-dimensional face information storage part 7 storing at least one three-dimensional face information, an imaging optical system 3 for forming an optical image containing a face of an authentication target, an image sensor 5 for photographing the optical image of the authentication target to obtain two-dimensional image data and image plane phase differential information of the face of the authentication target and a face authentication processing part 9 for performing a three-dimensional face authentication for the authentication target by collating the face of the authentication target with the three-dimensional face information stored in the three-dimensional face information storage part 7 based on the two-dimensional image data and the image plane phase differential information obtained by the image sensor.

Abstract: A book binding apparatus includes: a first processing section which is configured to perform a first process on a medium; a second processing section which is configured to perform a second process on the medium on which the first processing section has performed the first process; a first discharging section to which the medium on which the first processing section has performed the first process is discharged; and a second discharging section to which the medium on which the first processing section has performed the first process, and on which the second processing section has performed the second process is discharged.

Abstract: It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: A book binding apparatus includes: a first processing section which is configured to perform a first process on a medium; a second processing section which is configured to perform a second process on the medium on which the first processing section has performed the first process; a first discharging section to which the medium on which the first processing section has performed the first process is discharged; and a second discharging section to which the medium on which the first processing section has performed the first process, and on which the second processing section has performed the second process is discharged.

Abstract: Provided are a thermosetting resin composition containing polyester amide acid (A), epoxy compound (B) having a fluorene skeleton, epoxy curing agent (C) and colorant (D), and the thermosetting resin composition capable of forming a cured film having an excellent balance of satisfactory hardness and adhesion to glass under high-temperature conditions, and also an application of the thermosetting resin composition.

Abstract: It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: According to the present invention, a powder containing a carotenoid for feed having improved color enhancing ability, and a method for producing the same are provided. A method for producing a dried bacterial cell powder containing a carotenoid, comprising a step of drying via conductive heat transfer and a pulverization step and a dried bacterial cell powder produced by the method are provided.

Abstract: It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: A non-volatile storage system that performs a multi-stage programming process to program non-volatile storage to a set of data threshold voltage distributions. The multi-stage programming process includes performing a first stage of the multi-stage programming process to change threshold voltages of at least a subset of the non-volatile storage elements from an erased distribution to one or more intermediate distributions, performing an intermediate stage of the multi-stage programming process to change threshold voltages of at least some of the non-volatile storage elements to appropriate distributions of the data threshold voltage distributions, and performing a later stage of the multi-stage programming process, after performing the intermediate stage of the multi-stage programming process, to tighten only a subset of the data threshold voltage distributions.

Abstract: A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined.

Abstract: In a reservoir tank (5) of the present invention, a hydraulic fluid movement deterring wall (26) is disposed integrally with an upper half body (9) and extending toward a radial direction center of a cylindrical upper half body neck section (24) on a curved portion at a boundary between an inner peripheral surface (24a) of the cylindrical upper half body neck section (24) and an inner surface (25a1) of a ceiling portion (25a) of an upper half body trunk section (25) or on the inner peripheral surface (24a) of the upper half body neck section (24). The movement of the hydraulic fluid frontward (toward a hydraulic fluid inlet (10)) in a hydraulic fluid storage chamber 13 at a time when the reservoir tank (5) is tilted frontward is controlled by this hydraulic fluid movement deterring wall (26).

Abstract: An RFID module including an antenna element forming an RFID antenna; an RFID circuit block to which the antenna element is connected; and a first resonance frequency adjustment circuit having an element that includes a drain terminal connected to the antenna element, a gate terminal that is grounded, and a source terminal that is grounded, wherein a pull-up resistor is connected between the drain terminal and a power supply.

Abstract: Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposer 52 is mounted on a top surface of a circuit board 43, and an acoustic sensor 51 is mounted on the top surface thereof. A signal processing circuit 53 is accommodated in a space 70 provided in the interposer 52, and mounted on the circuit board 43. The acoustic sensor 51 is connected to the circuit board 43 through a wiring structure provided in the interposer 52. The acoustic sensor 51, the interposer 52 and the like are covered by a cover 42 put on the top surface of the circuit board 43. In the cover 42, a sound introduction hole 48 is opened in a position opposed to the front chamber of the acoustic sensor 51. The interposer 52 is formed with a ventilation notch 71 for acoustically communicating a space below a diaphragm 56 of the acoustic sensor 51 with a space inside the cover 42 and outside the interposer 52.

Abstract: A material pressure feeding apparatus 10 includes a container 12 for receiving a bag 11, in which a viscous material M is contained, a press member 13 exerting a pressing force on the material, a pressure feeder 15 pressure-feeding, to the outside, the material M sucked by the pressing force by the press member 13, and an annular member 16 positioned on the outer peripheral side of the press member 13. The press member 13 has a supporting space S on the outer peripheral side thereof, and a ring portion 40 constituting an annular member 16 is supported in the supporting space S in a relatively movable state. Thus, even when the press member 13 is inclined, the annular member 16 is configured so as not to form a clearance between it and the inner peripheral surface of the container 12 without any influence of the inclination.

Abstract: A vibrating electrode plate 24 that senses a sound pressure faces a counter electrode plate 25 to form a capacitance type acoustic sensor. Acoustic perforations are opened in the counter electrode plate 25 in order to allow vibration to pass through. The acoustic perforations opened in the counter electrode plate 25 include plural acoustic perforations 31 having a relatively small opening area and one acoustic perforation 36 having a relatively large opening area. The acoustic perforations 31 and 36 are disposed into a lattice shape at equal intervals. Assuming that L is a width of a diaphragm 28, in the counter electrode plate 25, the acoustic perforation 36 having the large opening area is provided within a circular region a having a radius r=L/4 around a position facing a center of the diaphragm 28.

Abstract: A brass instrument practice device (1) is used for practicing while holding a lip state for playing a brass instrument and has a tubular body (10) and a mouth piece portion (20). The tubular body (10) has a through hole (11) formed inside. The mouth piece portion (20) is secured on one end side of the tubular body (10), has a cross-sectional shape relatively long in one direction so as to fit the shape between the upper and lower lips, and has an opening portion (22) communicating with the through hole (11) and constituting a flow path through which air from the lips flows.

Abstract: A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined.

Abstract: A non-volatile storage system that performs a multi-stage programming process to program non-volatile storage to a set of data threshold voltage distributions. The multi-stage programming process includes performing a first stage of the multi-stage programming process to change threshold voltages of at least a subset of the non-volatile storage elements from an erased distribution to one or more intermediate distributions, performing an intermediate stage of the multi-stage programming process to change threshold voltages of at least some of the non-volatile storage elements to appropriate distributions of the data threshold voltage distributions, and performing a later stage of the multi-stage programming process, after performing the intermediate stage of the multi-stage programming process, to tighten only a subset of the data threshold voltage distributions.