Abstract: A method for treating material surface utilizing atomic hydrogen. The method includes utilizing atomic hydrogen by mixing halogen and/or halide to a gas which is used for generating, atomic hydrogen in the plasma. The present method also includes utilizing a characteristics of plasma downstream (11) in which the objective surface is prevented from physical damage caused by high energy particle and undesirable reactive species are controlled so as to avoid their influence. In an alternative embodiment, the present invention includes a method for a material surface treatment utilizing atomic hydrogen without the influence of atomic oxygen by using a gas, as a plasma source, containing the molecule and/or compound of chlorine, bromine and/or iodine and not containing molecules with oxygen atom.

Abstract: A high frequency reaction processing system comprising an outer container (40) made of a dielictric material and having two end faces, which can close the inner cavity, one or more high frequency wave coupling portion (42) disposed at arbitrary position on the outer surface of the outer container (40), one or more inner container (41) made of a dielectric material and having two end faces, which can closeg the inner cavity, disposed at a position for receiving a high frequency wave guided through the high frequency wave coupling portion (42) without touching the inner side face of the outer container (40), and a covering portion (43) made of a conductive material, for covering the outer surface of the outer container except for the area occupied with the high frequency wave coupling portion (42) and sustaining the potential at a level equal to the ground potential of a waveguide line.

Abstract: A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H2O bearing compound or is preferably H2O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H2O bearing compound in Gas-C includes a H2O bearing compound that is lower in concentration than a Gas-A concentration.

Abstract: A discharge tube (31) provided inside the cavity of a waveguide (4) is so structured as to monotonously decrease the cross section of the cavity in the direction in which the microwave travels and thereby to close the cavity. The waveguide (34) has vent holes (34a, 34c) made through the tube wall. A metallic member (32) monotonously decreasing the cross section of the cavity in the direction in which the microwave travels and thereby closing the cavity is provided on the opposite side to the discharge tube (31) in the direction in which the microwave travels. A fluid is made to flow through the metallic member. A gas introducing port is provided in the discharge tube (31), and a gas exhaust port is provided also in the discharge tube (31) on the opposite side to the gas introducing port with respect to the center axis of the waveguide (34).

Abstract: A substrate M having a thin film on its surface is supported on a support 4. A gas discharge opening 12A of hydrogen radicals which faces the thin film on the substrate is provided. A semiconductor thin film is deposited on the substrate M by supplying the thin film with hydrogen radicals H from the gas discharge opening 12A while the substrate M is cooled via to 40 K or less through heat conduction via the support 4 by means of refrigerator 3.

Abstract: The present invention attains a microwave absorber attachment in a readily, rapidly and stable manner. According to the microwave absorber attaching method and structure of the present invention, a plurality of ferrite plates 4 are bonded to a shield plate 2 at an installation place such as the ceiling, a wall, the floor or the like; the base portion of a support rod 6 is connected to the ferrite plates 4, causing the support rod 6 to project therefrom; a microwave absorber 1 is placed with its base portion placed along the ferrite plates 4; the support rod 6 passes through a tip opening 11 of the microwave absorber 1, causing the support rod 6 to project therethrough; a covering tray 8 allows for the support rod 6 to pass therethrough to cover the microwave absorber 1; and a fastening member is fastened to a tip threaded portion 12 of the support rod 6, thus attaching the microwave absorber 1 to the installation place. The gaps between adjacent ferrite plates 4 are filled with a magnetic sealing agent.

Abstract: A substrate M having a thin film on its surface is supported on a support 4. A gas discharge opening 12A of hydrogen radicals which faces the thin film on the substrate is provided. A semiconductor thin film is deposited on the substrate M by supplying the thin film with hydrogen radicals H from the gas discharge opening 12A while the substrate M is cooled via to 40 K or less through heat conduction via the support 4 by means of refrigerator 3.

Abstract: A processing method includes providing a first gas including a hydrogen atom into a first chamber, igniting a plasma within the first chamber to provide a source of hydrogen atoms, passing the plasma downstream through a cavity to a second chamber disposed separately from the first chamber, and heating an object disposed within the second chamber.

Abstract: A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N.sub.2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H.sub.2 O bearing compound or is preferably H.sub.2 O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H.sub.2 O bearing compound in Gas-C includes a H.sub.2 O bearing compound that is lower in concentration than a Gas-A concentration.

Abstract: A wafer surface treatment apparatus and method used in the apparatus including a treatment tank with a cylindrical inside with a bottom, a circular recess formed in the bottom of the tank, a plurality of lower fluid holes opened in the recess, and a horizontally long opening provided at lower part of the side wall of the tank. A movable wall is tightly but slidably installed in the cylindrical inside of the tank so that the movable wall forms a closed room with the recess when it comes into contact with the bottom of the tank. Also, a plurality of upper fluid holes are provided so as to communicate with the closed room, and a rinsing water and washing liquid supply/discharge device is connected to the upper and lower fluid holes.