Abstract: A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.

Abstract: An oxide insulator film contains a first metal oxide and a second metal oxide. An electrical conductivity of the second metal oxide is lower than an electrical conductivity of the first metal oxide. The oxide insulator film includes particles of the first metal oxide which are dispersed in a matrix including the second metal oxide.

Abstract: An additive for an organic conductor includes a naphthalene ring, at least two sulfonic acid groups bonded to the naphthalene ring, and at least one carboxy group bonded to the naphthalene ring. In the case where the number of the sulfonic acid groups is two, when the sulfonic acid groups are respectively referred to as a first sulfonic acid group and a second sulfonic acid group, and a carbon atom of the naphthalene ring bonded to the first sulfonic acid group and a carbon atom of the naphthalene ring bonded to the second sulfonic acid group are respectively referred to as a first carbon atom and a second carbon atom, the number n of carbon atoms present between the first carbon atom and the second carbon atom is three or less.

Abstract: A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.

Abstract: A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.

Abstract: A phosphor according to the present disclosure is obtained by adding a rare earth element to a host material having boron, nitrogen, and oxygen as main components, and a composition formula is represented by B(l)O(m)N(n):Z. Here, B, O, N, and Z indicate boron, oxygen, nitrogen, and the rare earth element, respectively. Moreover, each of l, m, and n indicates element content.

Abstract: An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.

Abstract: The transistor includes an underlying layer 301 formed on a substrate 300, and a first layer (including an operation layer 302) made of a nitride semiconductor formed on the underlying layer 301. The underlying layer 301 is a multilayered structure including a plurality of stacked nitride semiconductor layers. The underlying layer 301 includes a transition-metal-containing layer containing at least one of cobalt, nickel, ruthenium, osmium, rhodium, or iridium which is a transition metal.

Abstract: The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nitride has a regular atomic arrangement. Moreover, an arrangement of nitrogen atoms of the group IV nitride in the interface and an arrangement of group III atoms of the group III nitride semiconductor in the interface may be substantially identical.

Abstract: The transistor includes an underlying layer 301 formed on a substrate 300, and a first layer (including an operation layer 302) made of a nitride semiconductor formed on the underlying layer 301. The underlying layer 301 is a multilayered structure including a plurality of stacked nitride semiconductor layers. The underlying layer 301 includes a transition-metal-containing layer containing at least one of cobalt, nickel, ruthenium, osmium, rhodium, or iridium which is a transition metal.

Abstract: A nitride semiconductor light-emitting device includes a substrate (101) made of silicon, a mask film (102) made of silicon oxide, formed on a principal surface of the substrate (101), and having at least one opening (102a), a seed layer (104) made of GaN selectively formed on the substrate (101) in the opening (102a), an LEG layer (105) formed on a side surface of the seed layer (104), and an n-type GaN layer (106), an active layer (107), and a p-type GaN layer (108) which are formed on the LEG layer (105). The LEG layer (105) is formed by crystal growth using an organic nitrogen material as a nitrogen source.

Abstract: An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.

Abstract: The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nitride has a regular atomic arrangement. Moreover, an arrangement of nitrogen atoms of the group IV nitride in the interface and an arrangement of group III atoms of the group III nitride semiconductor in the interface may be substantially identical.

Abstract: The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nitride has a regular atomic arrangement. Moreover, an arrangement of nitrogen atoms of the group IV nitride in the interface and an arrangement of group III atoms of the group III nitride semiconductor in the interface may be substantially identical.

Abstract: A projection/recess structure is formed on a base substrate, and a layered structure of a nitride semiconductor laser is formed on the projection/recess structure. InGaN used for an active layer has an In intake efficiency and a growth rate that greatly vary with the plane direction. By use of this characteristic, an active layer structure low in In content and small in well layer thickness can be formed at a light-outgoing end facet by one-time crystal growth, and thus the transition wavelength of the active layer near the light-outgoing end facet can be shortened. As a result, since optical damage due to light absorption at the light-outgoing end facet can be greatly reduced, a nitride semiconductor laser capable of performing high light-output operation can be implemented.

Abstract: A semiconductor device includes an undoped GaN layer (13), an undoped AlGaN layer (14), and a p-type GaN layer (15). In the p-type GaN layer (15), highly resistive regions (15a) are selectively formed. Resistance of the highly resistive regions (15a) can be increased by introducing a transition metal, for example, titanium.

Abstract: A nitride semiconductor light-emitting device includes a substrate (101) made of silicon, a mask film (102) made of silicon oxide, formed on a principal surface of the substrate (101), and having at least one opening (102a), a seed layer (104) made of GaN selectively formed on the substrate (101) in the opening (102a), an LEG layer (105) formed on a side surface of the seed layer (104), and an n-type GaN layer (106), an active layer (107), and a p-type GaN layer (108) which are formed on the LEG layer (105). The LEG layer (105) is formed by crystal growth using an organic nitrogen material as a nitrogen source.

Abstract: A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.

Abstract: A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.

Abstract: A p-type semiconductor includes a host material that is a semiconductor, an acceptor element and a localized band formation element. The acceptor element is doped to the host material and has fewer valence electrons than valance electrons of at least one of the elements which compose the host material. The localized band formation element is doped to the host material, is isovalent with at least one of the elements which compose the host material, has smaller electronegativity than the electronegativity of the element(s), and forms the localized band which activates holes of an acceptor level.