Abstract: A metal wire containing tungsten is provided. A tungsten content of the metal wire is at least 90 wt %. A tensile strength of the metal wire is at least 4000 MPa. An elastic modulus of the metal wire is at least 350 GPa and at most 450 GPa. A diameter of the metal wire is at most 60 ?m. An average crystal grain size of the metal wire in a cross-section orthogonal to an axis of the metal wire is at most 0.20 ?m.

Abstract: A metal wire containing tungsten is provided. A tungsten content of the metal wire is at least 90 wt %. A tensile strength of the metal wire is at least 4000 MPa. An elastic modulus of the metal wire is at least 350 GPa and at most 450 GPa. A diameter of the metal wire is at most 60 ?m. An average crystal grain size of the metal wire in a cross-section orthogonal to an axis of the metal wire is at most 0.20 ?m.

Abstract: A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p? epitaxial layer that touches and lies between an n+ lower epitaxial layer and an n+ upper epitaxial layer. A metal contact touches and lies over a p+ layer, which touches and lies over the n+ upper epitaxial layer.

Abstract: A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p? epitaxial layer that touches and lies between an n+ lower epitaxial layer and an n+ upper epitaxial layer. A metal contact touches and lies over a p+ layer, which touches and lies over the n+ upper epitaxial layer.

Abstract: A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p? epitaxial layer that touches and lies between an n+ lower epitaxial layer and an n+ upper epitaxial layer. A metal contact touches and lies over a p+ layer, which touches and lies over the n+ upper epitaxial layer.

Abstract: A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p? epitaxial layer that touches and lies between an n+ lower epitaxial layer and an n+ upper epitaxial layer. A metal contact touches and lies over a p+ layer, which touches and lies over the n+ upper epitaxial layer.

Abstract: A method for forming a vertical electrostatic discharge (ESD) protection device includes depositing a multi-layer n-type epitaxial layer on a substrate having p-type surface including first epitaxial depositing to form a first n-type epitaxial layer on the p-type surface, and second epitaxial depositing to form a second n-type epitaxial layer formed on the first n-type epitaxial layer. The first type epitaxial layer has a peak doping level which is at least double that of the second n-type epitaxial layer. A p+ layer is formed on the second n-type epitaxial layer. An etch step etches through the p+ layer and multi-layer n-type epitaxial layer to reach the substrate to form a trench. The trench is filled with a filler material to form a trench isolation region. A metal contact is formed on the p+ layer for providing contact to the p+ layer.

Abstract: A method for forming a vertical electrostatic discharge (ESD) protection device includes depositing a multi-layer n-type epitaxial layer on a substrate having p-type surface including first epitaxial depositing to form a first n-type epitaxial layer on the p-type surface, and second epitaxial depositing to form a second n-type epitaxial layer formed on the first n-type epitaxial layer. The first type epitaxial layer has a peak doping level which is at least double that of the second n-type epitaxial layer. A p+ layer is formed on the second n-type epitaxial layer. An etch step etches through the p+ layer and multi-layer n-type epitaxial layer to reach the substrate to form a trench. The trench is filled with a filler material to form a trench isolation region. A metal contact is formed on the p+ layer for providing contact to the p+ layer.

Abstract: A semiconductor device having a thyristor SCR with reduced turn-off time. A third semiconductor region of the second conductivity type (anode AN) and a fourth semiconductor region of the first conductivity type (anode gate AG) are formed in the top layer of a first semiconductor region; fifth semiconductor region of the first conductivity type (cathode CA) and sixth semiconductor region of the second conductivity type (cathode gate CG) are formed in the top layer of a second semiconductor region; a gate insulating film and gate electrode MG are formed on the second semiconductor region. When the thyristor is turned off from the on state, a higher potential than that on the anode is applied to the anode gate, and a diode made up of the anode and the anode gate inside the thyristor is made to conduct so as to control the potential of the anode during driving.

Abstract: A method of forming a MEMS structure over active circuitry in a semiconductor body includes forming active circuitry in a semiconductor body, and forming the MEMS structure over the active circuitry, wherein at least a portion of the MEMS structure spatially overlaps the active circuitry.

Abstract: A semiconductor device having a thyristor SCR with reduced turn-off time. A third semiconductor region of the second conductivity type (anode AN) and a fourth semiconductor region of the first conductivity type (anode gate AG) are formed in the top layer of a first semiconductor region; fifth semiconductor region of the first conductivity type (cathode CA) and sixth semiconductor region of the second conductivity type (cathode gate CG) are formed in the top layer of a second semiconductor region; a gate insulating film and gate electrode MG are formed on the second semiconductor region. When the thyristor is turned off from the on state, a higher potential than that on the anode is applied to the anode gate, and a diode made up of the anode and the anode gate inside the thyristor is made to conduct so as to control the potential of the anode during driving.

Abstract: A method of forming a MEMS structure over active circuitry in a semiconductor body includes forming active circuitry in a semiconductor body, and forming the MEMS structure over the active circuitry, wherein at least a portion of the MEMS structure spatially overlaps the active circuitry.

Abstract: Prevents deterioration of the element characteristics of the gate voltage tolerance and the like which is caused by the metallic contaminants that are sealed in the element forming region at the time of applying a trench separator in a SOI substrate. Polysilicon 12 is formed on the side walls of the trench 5, and the metallic contaminants within the element forming region are collected in this polysilicon 12.

Abstract: Apparatus including a rotary head accurately reproduces a digital signal recorded on a tape, even when the tape runs at high speed. Transitions of a reproduced signal are detected, intervals corresponding to the transitions are counted on the basis of a predetermined reference signal, and the rotation of the rotary head is controlled in response to the counted value so that the relative speed between the rotary head and the tape is held constant, notwithstanding changes in the absolute speed of the tape, as in the fast-forward mode.

Abstract: An apparatus for reproducing digital signals recorded on a magnetic or other recording tape includes a servo mechanism which is effective, when the tape is transported at a high speed in either a fast-forward or rewind mode, to maintain a relative speed between the tape and a rotary head that is substantially the same as that in the normal playback mode. Moreover, in the rewind mode, the rotary head is rotated in the direction opposite to that in the normal playback mode, while the absolute value of the relative speed remains the same as that in the normal playback mode. Further, the digital signals reproduced by the rotary head in the rewind mode have their sequential order reversed.

Abstract: In a recording/reproducing apparatus, a program identifying number is recorded in a beginning portion of each of a sequence of programs recorded on a record medium during a first recording operation, and a program start signal is recorded in a beginning portion of each program recorded in a second recording operation and thereafter. Subsequently, in a renumbering operation, each of the recorded program identifying numbers and/or program start signals is detected, with high speed movement of the record medium therebetween, and the previously existing recorded program identifying numbers and/or program start signals are replaced by a properly ordered sequence of program identifying numbers on the record medium.

Abstract: Apparatus for reproducing digital signals recorded on a recording tape comprises a rotary drum about which a recording tape can be trained, a rotary head mounted in the drum, a transport mechanism for transporting the tape over the drum and rotating the head so that a relative speed is established between the head and the tape and the head scans the tape and generates reproduced digital signals in response to digital signals recorded on the tape, and a mode-control mechanism for controlling the transport mechanism so that the tape is transported over the drum at an absolute tape speed that can be varied. A servomechanism responsive to variations in the absolute tape speed adjusts the transport mechanism so that the head acquires a rotary speed such that the relative speed is restored to and maintained at a substantially constant value, not withstanding changes in the absolute tape speed effected under the control of the mode-control mechanism.