Patents by Inventor Toshiyuki Uno

Toshiyuki Uno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240210814
    Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
    Type: Application
    Filed: March 6, 2024
    Publication date: June 27, 2024
    Applicant: AGC INC.
    Inventors: Hirotomo KAWAHARA, Daijiro AKAGI, Hiroaki IWAOKA, Toshiyuki UNO, Michinori SUEHARA, Keishi TSUKIYAMA
  • Publication number: 20240201576
    Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
    Type: Application
    Filed: February 29, 2024
    Publication date: June 20, 2024
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroshi HANEKAWA, Toshiyuki UNO, Masafumi AKITA
  • Publication number: 20240176225
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of: dbi MAX?(i×6+1) nm?dbi?dbi MAX?(i×6?1) nm where the integer i is 0 or 1, and dbi MAX is represented by: d bi ? MAX ( nm ) = 13.53 2 ? n ? cos ? 6 ? ° { INT ( 0.58 1 - n 1 ) + 1 2 ? ? ? ( tan - 1 ( - k 2 1 - n 2 ) + 0.
    Type: Application
    Filed: January 19, 2024
    Publication date: May 30, 2024
    Applicant: AGC INC.
    Inventors: Hiroyoshi TANABE, Hiroshi HANEKAWA, Toshiyuki UNO
  • Patent number: 11982935
    Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
    Type: Grant
    Filed: November 17, 2021
    Date of Patent: May 14, 2024
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroshi Hanekawa, Toshiyuki Uno, Masafumi Akita
  • Publication number: 20240152044
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hiroaki IWAOKA, Shunya TAKI, Kenichi SASAKI, Ichiro ISHIKAWA, Toshiyuki UNO
  • Patent number: 11953822
    Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
    Type: Grant
    Filed: May 18, 2023
    Date of Patent: April 9, 2024
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Daijiro Akagi, Hiroaki Iwaoka, Toshiyuki Uno, Michinori Suehara, Keishi Tsukiyama
  • Patent number: 11914283
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M ? A ? X - ( i × 6 + 1 ) ? nm ? d ? d M ? A ? X - ( i × 6 - 1 ) ? nm where the integer i is 0 or 1, and dMAX is represented by: d MAX ( nm ) = 13.53 2 ? n ? cos ? 6 ? ° { INT ? ( 0.58 1 - n ) + 1 2 ? ? ? ( tan - 1 ( - k 1 - n ) + 0.64 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: February 27, 2024
    Assignee: AGC INC.
    Inventors: Hiroyoshi Tanabe, Hiroshi Hanekawa, Toshiyuki Uno
  • Publication number: 20240045319
    Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
    Type: Application
    Filed: October 17, 2023
    Publication date: February 8, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo Kawahara, Toshiyuki Uno, Ichiro Ishikawa, Kenichi Sakaki
  • Patent number: 11822229
    Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: November 21, 2023
    Assignee: AGC Inc.
    Inventors: Daijiro Akagi, Hirotomo Kawahara, Toshiyuki Uno, Ichiro Ishikawa, Kenichi Sasaki
  • Publication number: 20230324785
    Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
    Type: Application
    Filed: May 18, 2023
    Publication date: October 12, 2023
    Applicant: AGC INC.
    Inventors: Hirotomo KAWAHARA, Daijiro AKAGI, Hiroaki IWAOKA, Toshiyuki UNO, Michinori SUEHARA, Keishi TSUKIYAMA
  • Publication number: 20230305383
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Application
    Filed: May 24, 2023
    Publication date: September 28, 2023
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO, Hiroshi HANEKAWA, Daijiro AKAGI
  • Publication number: 20230288794
    Abstract: A reflective mask blank for EUV lithography, includes, in the following order, a substrate, a multilayer reflective film reflecting EUV light, a protective film for the multilayer reflective film, and an absorption layer absorbing EUV light, in which the protective film includes rhodium (Rh) or a rhodium material including Rh and at least one element selected from the group consisting of nitrogen (N), oxygen (O), carbon (C), boron (B), ruthenium (Ru), niobium (Nb), molybdenum (Mo), tantalum (Ta), iridium (Ir), palladium (Pd), zirconium (Zr), and titanium (Ti).
    Type: Application
    Filed: May 23, 2023
    Publication date: September 14, 2023
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Kenichi SASAKI, Ichiro ISHIKAWA, Toshiyuki UNO
  • Patent number: 11698580
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: July 11, 2023
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroyoshi Tanabe, Toshiyuki Uno, Hiroshi Hanekawa, Daijiro Akagi
  • Publication number: 20220299862
    Abstract: A reflective mask blank for EUV lithography includes, in the following order, a substrate, a multilayer reflective film for reflecting EUV light, a phase shift film for shifting a phase of EUV light, and an etching mask film. The phase shift film is constituted of a ruthenium-based material containing ruthenium as a main component. The phase shift film has a film thickness of 20 nm or larger. The etching mask film is removable with a cleaning liquid comprising an acid or a base.
    Type: Application
    Filed: June 8, 2022
    Publication date: September 22, 2022
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO
  • Publication number: 20220236636
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M ? A ? X - ( i × 6 + 1 ) ? nm ? d ? d M ? A ? X - ( i × 6 - 1 ) ? nm where the integer i is 0 or 1, and dMAX is represented by: d M ? A ? X ( nm ) = 1 ? 3 . 5 ? 3 2 ? n ? cos ? 6 ? ° ? { INT ? ( 0 . 5 ? 8 1 - n ) + 1 2 ? ? ? ( tan - 1 ( - k 1 - n ) + 0 . 6 ? 4 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Applicant: AGC INC.
    Inventors: Hiroyoshi TANABE, Hiroshi HANEKAWA, Toshiyuki UNO
  • Publication number: 20220075256
    Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
    Type: Application
    Filed: November 17, 2021
    Publication date: March 10, 2022
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroshi HANEKAWA, Toshiyuki UNO, Masafumi AKITA
  • Publication number: 20220035234
    Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
    Type: Application
    Filed: July 22, 2021
    Publication date: February 3, 2022
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Toshiyuki UNO, Ichiro ISHIKAWA, Kenichi SASAKI
  • Publication number: 20210325772
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Application
    Filed: April 20, 2021
    Publication date: October 21, 2021
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO, Hiroshi HANEKAWA, Daijiro AKAGI
  • Patent number: 11036127
    Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: June 15, 2021
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroshi Hanekawa, Toshiyuki Uno
  • Patent number: 10254640
    Abstract: A process for producing a reflective element for a mask blank, of which a reflective layer is hardly damaged at the time of etching treatment of an absorber layer. A process for producing a reflective element for a mask blank, which comprises (1) a step of forming a reflective layer on a first surface of a substrate, (2) a step of forming a first protective layer on the reflective layer, (3) a step of cleaning the substrate to form an exposed part of the reflective layer, which is not covered with the first protective layer, and (4) a step of forming a second protective layer on the first surface of the substrate to cover the exposed part of the reflective layer with the second protective layer.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: April 9, 2019
    Assignee: AGC Inc.
    Inventor: Toshiyuki Uno