Patents by Inventor Toshiyuki Uno

Toshiyuki Uno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10840775
    Abstract: A rotary electrical machine for a vehicle according to the present invention is provided with a stator, a rotor which is provided facing the stator and which rotates coaxially with the stator, a power module which is connected to the stator, a capacitor which eliminates or reduces switching noise in the power module and has a pressure release valve, a circuit board on which the capacitor is mounted, and a heat sink which encompasses the capacitor, wherein a semi-closed cell foam seal material is provided in contact with the pressure release valve, and the capacitor is fixed to a terminal fixing section of the circuit board, and is also fixed to an inner side of the heat sink by an anti-vibration bond in a portion different from the terminal fixing section.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: November 17, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Toshiyuki Onishi, Tomoaki Shimano, Yosuke Uno
  • Publication number: 20200278590
    Abstract: An aperture unit includes a base plate, a cover, a plurality of aperture blades, a drive ring, and protrusions. The aperture blades are disposed between the base plate and the cover, and adjust the amount of light passing through by varying the size of an opening. The drive ring is disposed between the base plate and the cover, and is rotationally driven when the aperture blades are opened and closed. The protrusions are provided to the drive ring and the cover, respectively, and support the aperture blades in the direction of suppressing upward warpage of the aperture blades in a state in which the aperture blades move in the direction of reducing the size of the opening.
    Type: Application
    Filed: February 26, 2020
    Publication date: September 3, 2020
    Inventors: Toshiyuki NAKADA, Tetsuya UNO, Satoshi FUKUDA
  • Patent number: 10254640
    Abstract: A process for producing a reflective element for a mask blank, of which a reflective layer is hardly damaged at the time of etching treatment of an absorber layer. A process for producing a reflective element for a mask blank, which comprises (1) a step of forming a reflective layer on a first surface of a substrate, (2) a step of forming a first protective layer on the reflective layer, (3) a step of cleaning the substrate to form an exposed part of the reflective layer, which is not covered with the first protective layer, and (4) a step of forming a second protective layer on the first surface of the substrate to cover the exposed part of the reflective layer with the second protective layer.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: April 9, 2019
    Assignee: AGC Inc.
    Inventor: Toshiyuki Uno
  • Publication number: 20190056653
    Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
    Type: Application
    Filed: August 7, 2018
    Publication date: February 21, 2019
    Applicant: AGC INC.
    Inventors: Hirotomo KAWAHARA, Hiroshi HANEKAWA, Toshiyuki UNO
  • Publication number: 20170235218
    Abstract: A process for producing a reflective element for a mask blank, of which a reflective layer is hardly damaged at the time of etching treatment of an absorber layer. A process for producing a reflective element for a mask blank, which comprises (1) a step of forming a reflective layer on a first surface of a substrate, (2) a step of forming a first protective layer on the reflective layer, (3) a step of cleaning the substrate to form an exposed part of the reflective layer, which is not covered with the first protective layer, and (4) a step of forming a second protective layer on the first surface of the substrate to cover the exposed part of the reflective layer with the second protective layer.
    Type: Application
    Filed: February 7, 2017
    Publication date: August 17, 2017
    Applicant: Asahi Glass Company, Limited
    Inventor: Toshiyuki UNO
  • Patent number: 9097976
    Abstract: To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate; wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component; the hard mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O) and hydrogen (H); and in the hard mask layer, the total content of Cr and either one of N and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: August 4, 2015
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazuyuki Hayashi, Kazunobu Maeshige, Toshiyuki Uno
  • Patent number: 9086629
    Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: July 21, 2015
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazunobu Maeshige, Kazuyuki Hayashi, Toshiyuki Uno
  • Patent number: 8956787
    Abstract: To provide an EUV mask blank provided with a low reflective layer, which has excellent properties as an EUV mask blank. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a low reflective layer to an inspection light (wavelength: 190 to 260 nm) for a mask pattern, formed in this order on the substrate, wherein the low reflective layer has a stacked structure having a first layer containing at least 95 at % in total of silicon (Si) and nitrogen (N), and a second layer containing at least 95 at % in total of tantalum (Ta), oxygen (O) and nitrogen (N) or a second layer containing at least 95 at % in total of tantalum (Ta) and nitrogen (N), stacked in this order from the absorber layer side.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: February 17, 2015
    Assignee: Asahi Glass Company, Limited
    Inventors: Toshiyuki Uno, Kazuyuki Hayashi
  • Publication number: 20130323630
    Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).
    Type: Application
    Filed: August 1, 2013
    Publication date: December 5, 2013
    Applicant: Asahi Glass Company, Limited
    Inventors: Kazunobu MAESHIGE, Kazuyuki HAYASHI, Toshiyuki UNO
  • Publication number: 20130316272
    Abstract: To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate; wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component; the hard mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O) and hydrogen (H); and in the hard mask layer, the total content of Cr and either one of N and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.
    Type: Application
    Filed: August 1, 2013
    Publication date: November 28, 2013
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Kazuyuki Hayashi, Kazunobu Maeshige, Toshiyuki Uno
  • Publication number: 20120322000
    Abstract: To provide an EUV mask blank provided with a low reflective layer, which has excellent properties as an EUV mask blank. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a low reflective layer to an inspection light (wavelength: 190 to 260 nm) for a mask pattern, formed in this order on the substrate, wherein the low reflective layer has a stacked structure having a first layer containing at least 95 at % in total of silicon (Si) and nitrogen (N), and a second layer containing at least 95 at % in total of tantalum (Ta), oxygen (O) and nitrogen (N) or a second layer containing at least 95 at % in total of tantalum (Ta) and nitrogen (N), stacked in this order from the absorber layer side.
    Type: Application
    Filed: August 30, 2012
    Publication date: December 20, 2012
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Toshiyuki Uno, Kazuyuki Hayashi
  • Patent number: 8288062
    Abstract: Provision of a reflective mask blank for EUV lithography having an absorber layer having optical constants suitable for reducing the film thickness. A reflective mask blank for EUV lithography comprising a substrate and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light, that are formed in this order on the substrate; wherein the absorber layer contains at least one element selected from the group consisting of molybdenum (Mo), tin (Sn), silver (Ag), niobium (Nb) and titanium (Ti), and the absorber layer further contains palladium (Pd).
    Type: Grant
    Filed: January 9, 2012
    Date of Patent: October 16, 2012
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazuyuki Hayashi, Toshiyuki Uno
  • Publication number: 20120107733
    Abstract: Provision of a reflective mask blank for EUV lithography having an absorber layer having optical constants suitable for reducing the film thickness. A reflective mask blank for EUV lithography comprising a substrate and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light, that are formed in this order on the substrate; wherein the absorber layer contains at least one element selected from the group consisting of molybdenum (Mo), tin (Sn), silver (Ag), niobium (Nb) and titanium (Ti), and the absorber layer further contains palladium (Pd).
    Type: Application
    Filed: January 9, 2012
    Publication date: May 3, 2012
    Applicant: Asahi Glass Company, Limited
    Inventors: Kazuyuki HAYASHI, Toshiyuki UNO
  • Patent number: 8168352
    Abstract: Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask. A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.
    Type: Grant
    Filed: January 11, 2011
    Date of Patent: May 1, 2012
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazuyuki Hayashi, Toshiyuki Uno, Ken Ebihara
  • Patent number: 8029950
    Abstract: A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled. A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: October 4, 2011
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazuyuki Hayashi, Toshiyuki Uno, Ken Ebihara
  • Patent number: 7960077
    Abstract: A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: June 14, 2011
    Assignee: Asahi Glass Company, Limited
    Inventors: Yoshiaki Ikuta, Toshiyuki Uno, Ken Ebihara
  • Publication number: 20110104595
    Abstract: Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask. A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.
    Type: Application
    Filed: January 11, 2011
    Publication date: May 5, 2011
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Kazuyuki HAYASHI, Toshiyuki Uno, Ken Ebihara
  • Publication number: 20100304283
    Abstract: A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled. A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.
    Type: Application
    Filed: August 12, 2010
    Publication date: December 2, 2010
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Kazuyuki Hayashi, Toshiyuki Uno, Ken Ebihara
  • Publication number: 20100167187
    Abstract: A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.
    Type: Application
    Filed: January 27, 2010
    Publication date: July 1, 2010
    Applicant: Asahi Glass Company, Limited
    Inventors: Yoshiaki IKUTA, Toshiyuki Uno, Ken Ebihara
  • Patent number: 7712333
    Abstract: To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch. A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.
    Type: Grant
    Filed: March 29, 2006
    Date of Patent: May 11, 2010
    Assignee: Asahi Glass Company, Limited
    Inventors: Toshiyuki Uno, Yoshiaki Ikuta, Mika Yokoyama, Ken Ebihara