Patents by Inventor Tou-Yu Chen

Tou-Yu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polysilicon hard mask etch defect particle removal
    Patent number: 6852472
    Abstract: The removal of defect particles that may be created during polysilicon hard mask etching, and that are embedded within the polysilicon layer, is disclosed. Oxide is first grown in the polysilicon layer exposed through the patterned hard mask layer, so that the defect particle becomes embedded within the oxide. Oxide growth may be accomplished by rapid thermal oxidation (RTO). The oxide is then exposed to an acidic solution, such as hydrofluoric (HF) acid, to remove the oxide and the embedded defect particle embedded therein.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: February 8, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., LTD
    Inventors: Chu-Sheng Lee, Tou-Yu Chen
  • Polysilicon hard mask etch defect particle removal
    Publication number: 20040081918
    Abstract: The removal of defect particles that may be created during polysilicon hard mask etching, and that are embedded within the polysilicon layer, is disclosed. Oxide is first grown in the polysilicon layer exposed through the patterned hard mask layer, so that the defect particle becomes embedded within the oxide. Oxide growth may be accomplished by rapid thermal oxidation (RTO). The oxide is then exposed to an acidic solution, such as hydrofluoric (HF) acid, to remove the oxide and the embedded defect particle embedded therein.
    Type: Application
    Filed: October 17, 2002
    Publication date: April 29, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chu-Sheng Lee, Tou-Yu Chen