Patents by Inventor Tougo Nakatani
Tougo Nakatani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11710941Abstract: A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.Type: GrantFiled: January 25, 2021Date of Patent: July 25, 2023Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Tougo Nakatani, Masayuki Hata
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Publication number: 20220285918Abstract: A semiconductor light-emitting element includes: a substrate; an n-type clad layer above the substrate; an active layer above the n-type clad layer; and a p-type clad layer above the active layer. The active layer includes: a well layer; an n-side first barrier layer on an n-type clad layer side of the well layer; and a p-side barrier layer on a p-type clad layer side of the well layer. The p-side barrier layer comprises In. The n-side first barrier layer has an In composition ratio lower than an In composition ratio of the p-side barrier layer. The n-side first barrier layer has a band gap energy smaller than a band gap energy of the p-side barrier layer.Type: ApplicationFiled: May 16, 2022Publication date: September 8, 2022Inventors: Toru TAKAYAMA, Takashi YUMOTO, Takeshi YOKOYAMA, Tougo NAKATANI, Shoichi TAKASUKA
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Patent number: 11437780Abstract: A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.Type: GrantFiled: September 11, 2019Date of Patent: September 6, 2022Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Norio Ikedo, Tougo Nakatani, Takahiro Okaguchi, Takeshi Yokoyama, Tomohito Yabushita, Toru Takayama
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Patent number: 11322908Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0?x?1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.Type: GrantFiled: October 31, 2019Date of Patent: May 3, 2022Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Toru Takayama, Tohru Nishikawa, Tougo Nakatani, Katsuya Samonji, Takashi Kano, Shinji Ueda
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Publication number: 20220013987Abstract: A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (AlxGa1-x)0.5In0.5P, the first guide layer consists of (AlyGa1-y)0.5In0.5P, and the second conductivity-type cladding layer consists of (AlzGa1-z)0.5In0.5P, where x, y, and z each denote an Al composition ratio, 0<x?y<z?y is satisfied, and D/L>0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.Type: ApplicationFiled: September 28, 2021Publication date: January 13, 2022Inventors: Kazuya YAMADA, Tougo NAKATANI, Hiroki NAGAI, Masayuki HATA
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Publication number: 20210167582Abstract: A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.Type: ApplicationFiled: January 25, 2021Publication date: June 3, 2021Inventors: Tougo NAKATANI, Masayuki HATA
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Patent number: 10985533Abstract: A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2<Eg3 is satisfied, where Eg2 and Eg3 denote maximum values of band gap energy of the second semiconductor layer and the third semiconductor layer, respectively. The third semiconductor layer includes a first region layer in which band gap energy monotonically decreases toward the fourth semiconductor layer. N2>N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.Type: GrantFiled: December 20, 2018Date of Patent: April 20, 2021Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.Inventors: Tougo Nakatani, Takahiro Okaguchi, Norio Ikedo, Takeshi Yokoyama, Tomohito Yabushita, Toru Takayama, Shoichi Takasuka
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Patent number: 10971897Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.Type: GrantFiled: December 27, 2018Date of Patent: April 6, 2021Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.Inventors: Norio Ikedo, Tougo Nakatani, Takahiro Okaguchi, Takeshi Yokoyama, Tomohito Yabushita, Toru Takayama
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Patent number: 10680414Abstract: A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.Type: GrantFiled: November 6, 2018Date of Patent: June 9, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Toru Takayama, Tougo Nakatani, Takashi Kano, Katsuya Samonji
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Publication number: 20200067267Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0?x?1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.Type: ApplicationFiled: October 31, 2019Publication date: February 27, 2020Inventors: Toru TAKAYAMA, Tohru NISHIKAWA, Tougo NAKATANI, Katsuya SAMONJI, Takashi KANO, Shinji UEDA
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Publication number: 20200006921Abstract: A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.Type: ApplicationFiled: September 11, 2019Publication date: January 2, 2020Inventors: Norio IKEDO, Tougo NAKATANI, Takahiro OKAGUCHI, Takeshi YOKOYAMA, Tomohito YABUSHITA, Toru TAKAYAMA
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Publication number: 20190148916Abstract: A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2<Eg3 is satisfied, where Eg2 and Eg3 denote maximum values of band gap energy of the second semiconductor layer and the third semiconductor layer, respectively. The third semiconductor layer includes a first region layer in which band gap energy monotonically decreases toward the fourth semiconductor layer. N2>N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.Type: ApplicationFiled: December 20, 2018Publication date: May 16, 2019Inventors: Tougo NAKATANI, Takahiro OKAGUCHI, Norio IKEDO, Takeshi YOKOYAMA, Tomohito YABUSHITA, Toru TAKAYAMA, Shoichi TAKASUKA
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Publication number: 20190131770Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.Type: ApplicationFiled: December 27, 2018Publication date: May 2, 2019Inventors: Norio IKEDO, Tougo NAKATANI, Takahiro OKAGUCHI, Takeshi YOKOYAMA, Tomohito YABUSHITA, Toru TAKAYAMA
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Publication number: 20190074665Abstract: A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.Type: ApplicationFiled: November 6, 2018Publication date: March 7, 2019Inventors: Toru TAKAYAMA, Tougo NAKATANI, Takashi KANO, Katsuya SAMONJI
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Publication number: 20100296541Abstract: A semiconductor laser diode includes a semiconductor multilayer structure including a first cladding layer of n-type conductivity, an active layer, and a second cladding layer of p-type conductivity having a ridge portion in an upper portion, which are sequentially formed on a substrate; a current blocking layer formed on the semiconductor multilayer structure, and having an opening exposing an upper surface of the ridge portion; an ohmic electrode formed on the upper surface of the ridge portion; an interconnect formed on the semiconductor multilayer structure to be electrically connected to the ohmic electrode; and a pad electrode formed in a region on one side of the ridge portion on the interconnect. The interconnect connects the pad electrode to the ohmic electrode through at least two current channels.Type: ApplicationFiled: January 29, 2010Publication date: November 25, 2010Inventor: Tougo NAKATANI
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Patent number: 7653104Abstract: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb<Tc<Ts is satisfied.Type: GrantFiled: October 7, 2008Date of Patent: January 26, 2010Assignee: Panasonic CorporationInventors: Yasuhiro Fujimoto, Tougo Nakatani, Toru Takayama, Isao Kidoguchi
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Publication number: 20090180504Abstract: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb<Tc<Ts is satisfied.Type: ApplicationFiled: October 7, 2008Publication date: July 16, 2009Inventors: Yasuhiro FUJIMOTO, Tougo Nakatani, Toru Takayama, Isao Kidoguchi
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Publication number: 20050259375Abstract: An overcurrent protection circuit according to the present invention includes: overcurrent detecting means for detecting a flow of an overcurrent in a load circuit; and voltage controlling means for changing a power supply voltage and supplying the resultant power supply voltage to the load circuit. The overcurrent detecting means detects a voltage decrease occurring when an overcurrent is generated, with respect to a voltage supplied to the load circuit during normal operation. The voltage controlling means suppresses an overcurrent flowing in the load circuit based on the voltage decrease.Type: ApplicationFiled: May 4, 2005Publication date: November 24, 2005Inventors: Hideharu Akimura, Shigeru Kataoka, Tougo Nakatani