Patents by Inventor Touru Iwagami

Touru Iwagami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate semiconductor device
    Patent number: 5623152
    Abstract: An insulated gate semiconductor device includes a gate trench having a gate electrode formed therein on a gate insulating film, and an emitter trench having an emitter electrode formed therein on a silicon oxide layer, to form a capacitance of a capacitor in a main current path by using the silicon oxide layer in the emitter trench, whereby a transient voltage upon switching is decreased and an application system including a snubber circuit is reduced in size.
    Type: Grant
    Filed: November 21, 1995
    Date of Patent: April 22, 1997
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Gourab Majumdar, Touru Iwagami