Abstract: In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

Abstract: A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

Abstract: Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.

Abstract: A lithium ion capacitor includes a positive electrode, a negative electrode, and an electrolyte. The positive electrode comprises a conductive polymer and an oxidation-reduction material having a lower oxidation-reduction potential than the conductive polymer as a positive electrode active material.

Abstract: A method for manufacturing an electrode for use in an electrical storage device includes bringing a porous material into contact with an oxidizing agent, then bringing the porous material into contact with a polymerizable monomer, so that the porous material is modified with an electrically-conductive polymer formed by a polymerization reaction of the polymerizable monomer and the oxidizing agent, and forming, on a surface of a collector, an active material layer containing the porous material modified with the electrically-conductive polymer.

Abstract: A power storage device includes a positive electrode, a negative electrode, and a non-aqueous electrolyte. The negative electrode comprises a plurality of types of negative electrode active materials, wherein each of the plurality of types has different lithium-ion absorption potentials.

Abstract: An electric double layer capacitor electrode includes a positive electrode having a positive electrode active material layer including a positive electrode side porous body and a negative electrode having a negative electrode active material layer including a negative electrode side porous body. An oxidation-reduction substance causing an oxidation-reduction reaction during charging and discharging is adsorbed onto at least one of the positive electrode side porous body of the positive electrode active material layer and the negative electrode side porous body of the negative electrode active material layer.

Abstract: In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

Abstract: A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

Abstract: Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.

Abstract: An enzyme electrode having excellent sensitivity, excellent stability, and a longer operating life, and an enzyme sensor using the enzyme electrode are provided. The enzyme electrode includes an electrode 2, a mesoporous silica material 3 formed on the electrode 2, and enzyme 4 immobilized in a small cavity of the mesoporous silica material 3. The size of the small cavity of the mesoporous silica material 3 is set to be 0.5 to 2.0 times the size of the enzyme 4.

Abstract: Disclosed is an enzyme electrode comprising: an electrode; a carbon nanotube layer including a plurality of carbon nanotubes extending directly from the electrode and/or a metallic catalyst immobilized on the electrode; and an enzyme immobilized in the carbon nanotube layer by being sandwiched between the carbon nanotubes.

Abstract: In a magnetic sensor (1) including a substrate (10) having a magnetism-sensitive element (11) formed thereon, a hard membrane (14) is formed on the outermost surface, an organic film (13) to relieve the stress caused by the hard membrane (14) is formed under the hard membrane (14), and an inorganic film (12) to relieve the stress caused by the organic film (13) is formed between the organic film (13) and magnetism-sensitive element (11). Also, an intermediate film formed from an element having a large force of bonding to carbon may be formed between the organic film (13) and hard membrane (14). Thus, the magnetic sensor (MR sensor, for example) can be protected against an external shock.

Abstract: In a magnetic sensor (1) including a substrate (10) having a magnetism-sensitive element (11) formed thereon, a hard membrane (14) is formed on the outermost surface, an organic film (13) to relieve the stress caused by the hard membrane (14) is formed under the hard membrane (14), and an inorganic film (12) to relieve the stress caused by the organic film (13) is formed between the organic film (13) and magnetism-sensitive element (11). Also, an intermediate film formed from an element having a large force of bonding to carbon may be formed between the organic film (13) and hard membrane (14). Thus, the magnetic sensor (MR sensor, for example) can be protected against an external shock.

Abstract: On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor layer 1, and a second area B that is interposed by an intermediate layer 3 consisting of an insulator, a metal different from the metallic layer 2 or a semiconductor different from the semiconductor layer 1 between the semiconductor 1 and the metallic layer 2, and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.