Abstract: A diode and a memory device having a diode are provided. The diode includes a semiconductor layer and phase change material layer. The semiconductor layer and the phase change material layer have different energy bandgaps and different carrier concentrations such that an isotype heterojunction is formed at a boundary interface between the semiconductor layer and the phase change material layer.

Abstract: The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.

Abstract: A diode and a memory device having a diode are provided. The diode includes a semiconductor layer and phase change material layer. The semiconductor layer and the phase change material layer have different energy bandgaps and different carrier concentrations such that an isotype heterojunction is formed at a boundary interface between the semiconductor layer and the phase change material layer.

Abstract: The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.

Abstract: The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.

Abstract: A medium for use in data storage, thermal energy storage and other applications, the medium comprising a functional layer made of different materials. One embodiment provides a data storage medium. The data storage medium comprises a substrate and a data storage layer supported by the substrate. The data storage layer comprises a plurality of regions each capable of representing a digital value. The data storage layer is at least partly made of a first material and a second material different from the first material. The data storage layer comprises a pattern of discrete portions made of the second material lying in a plane defined by the data storage layer. The pattern is configured such that each region representing a digital value contains a portion made of the first material and at least one of the discrete portions made of the second material. Other embodiments provide a thermal energy storage medium and a sensing medium.

Abstract: A memory cell for an electrically writeable and erasable memory medium as well as a memory medium thereof is provided. The memory cell comprises a data recording element, the data recording element has a plurality of multiple-layer structure disposed one on top of another; each the multiple-layer structure comprising a plurality of sequentially disposed individual layers. At least one of the plurality of individual layers is capable of changing phase between a crystalline state and an amorphous state in response to an electrical pulse, one of the plurality of individual layers having at least one atomic element which is absent from other one of the plurality of individual layers, and the plurality of multiple-layer structure is of a superlattice-like structure to lower a heat diffusion out of the data recording element to shorten a phase change time of the respective individual layers.

Abstract: The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.

Abstract: A method and apparatus for modulating multilevel data arrays to make them suitable for storage in multidimensional storage media, such as in holographic storage. In order to get a uniform signal of constant energy at the recording plane, first the multilevel data array, Vout, displayed on a spatial light modulator, has frequent transitions between symbols of different levels, and second it has constant energy. The energy is defined as the summation of the values of the symbols in the data array. The first constraint is achieved using V?in=Vin?qM(q, ZO), where ?q stands for the modulo-q addition operation; M(q, Zo) is a data array with randomly distributed symbols of q levels, where q is the number of levels and ZO is the seed used to generate the random multilevel data array.

Abstract: The present invention discloses a recording medium comprising an improved doped Stoichiometric Lithium Niobate (SLN) crystal for high-speed holographic data storage. The improved doped SLN has an extremely high optical damage resistance of more than 145 kW/cm2 for power density of an incident laser beam along the c axis. The Recording time using the present improved doped SLN is advantageously very short and is about 1 second for a single hologram with a saturated diffraction efficiency of 28.7% at a recording laser beam density of 70 W/cm2. Reliable retrieval of a signal-image written at as low as 1 milliseconds has been performed in the Z-cut doped SLN. The present recording medium is an improved doped SLN of a Z-cut SLN crystal doped with Iron (Fe) and Terbium (Tb). The Terbium (Tb) content within the fluxed melts for growing the improved doped SLN ranges from 10 ppm to 140 ppm.

Abstract: A method of producing a thin film magnetic device comprising forming a thin film of magnetic material over a surface of a substrate having a controlled surface topography, wherein the surface of the substrate is first subject to isotropic etching so as to increase the capacity of the substrate surface to induce a high orientation ratio in a thin film of magnetic material formed over the substrate surface without a reduction in the smoothness of the substrate; and a method of modifying a thin film magnetic device comprising a thin film of a magnetic material, the method comprising the step of subjecting a surface of the thin film magnetic device having a controlled surface topology to isotropic etching so as to increase the orientation ratio of the thin film magnetic device without reducing the smoothness of the surface of the thin film magnetic device.

Abstract: The present invention provides an improved optical reading and recording system utilizing optical system employing an aspherical solid immersion lens (SIL). The improved optical system has an aspherical SIL between an objective lens and the recording media. The aspherical SIL reduces the focused electromagnetic radiation beam spot size by providing an increased numeric aperture (NA) of the optical system. The aspherical surface of the SIL provide greater manufacturing and operating tolerances between the objective lens and the aspherical SIL. Greater manufacturing tolerances provide an easier to manufacture optical system. Increased ease of manufacture reduces the cost of optical systems.

Abstract: The invention concerns two-dimensional, nano-sized structures, formed of e.g. carbon, boron nitride, SiC, MoS3, MoSe2, GaN, ZnO, TiO2 and mixtures thereof, and apparatus and methods for their preparation.

Abstract: A method of forming at least one layer on a substrate surface by vacuum deposition of particles onto the substrate surface, the method comprising the step of moving at least part of the substrate at high speed during vacuum deposition in a first direction parallel to the substrate surface. The method reduces the amount of macroparticles in a layer or layers deposited on the substrate, and controls the microstructure and crystallographic structure of the deposited layer or layers. Also disclosed are devices for performing the method, and resulting products, for example a hard disk thin film media.

Abstract: A method of producing a patterned magnetic nanostructure is disclosed. The method includes providing a substrate having a non-magnetic single layer or multi layer film that can be converted into a magnetic state by annealing and/or mixing. The method further includes positioning a mask having a desired pattern and resolution associated with the patterned magnetic nanostructure on or over the film. The method additionally includes subjecting the mask-covered substrate to a beam of radiation (focussed or unfocussed) having sufficient energy to locally anneal and/or mix the non-magnetic or weak-magnetic single-layer or multi layer film. Because of the mask effect, only the desired portions of the non-magnetic film are exposed to the beam of radiation. As such, the desired portions of the non-magnetic film are changed from a non-magnetic to a magnetic state to produce an array of magnetic elements in a non-magnetic matrix. The size of each magnetic element is dependent on the resolution of mask.

Abstract: In data-storage media such as rewritable optical discs (DVD−RAM, DVD+RW, DVD−RW, DVR, CD−RW and PD), the current need for the disc to be initialised before it can be used is eliminated. This is achieved by depositing on the disc, immediately before and/or after the record layer itself has been deposited, a layer of additional material that induces the record layer to become deposited in its crystalline state, or to be transformed spontaneously into that state. One specific material, which has this effect on record layers of GeSbTe and/or AgInSbTe, is Sb2Te3.

Abstract: The present invention provides improved magnetic recording media comprising a substrate, a non-magnetic underlayer, and a cobalt alloy based magnetic layer in a hexagonal closely-packed structure. An optional thin magnetic or non-magnetic intermediate layer is disposed between the magnetic layer and the substrate. The multilayer thin films of this invention are subjected to heat treatment after deposition. The multilayer films of this invention provide significant improvement in magnetic properties for longitudinal magnetic recording.

Abstract: A method of producing a thin film magnetic device comprising forming a thin film of magnetic material over a surface of a substrate having a controlled surface topography, wherein the surface of the substrate is first subject to isotropic etching so as to increase the capacity of the substrate surface to induce a high orientation ratio in a thin film of magnetic material formed over the substrate surface without a reduction in the smoothness of the substrate; and a method of modifying a thin film magnetic device comprising a thin film of a magnetic material, the method comprising the step of subjecting a surface of the thin film magnetic device having a controlled surface topology to isotropic etching so as to increase the orientation ratio of the thin film magnetic device without reducing the smoothness of the surface of the thin film magnetic device.

Abstract: A method and apparatus for modulating multilevel data arrays to make them suitable for storage in multidimensional storage media, such as in holographic storage. In order to get a uniform signal of constant energy at the recording plane, first the multilevel data array, Vout, displayed on a spatial light modulator, has frequent transitions between symbols of different levels, and second it has constant energy. The energy is defined as the summation of the values of the symbols in the data array. The first constraint is achieved using V′in=Vin⊕qM (q, ZO), where ⊕q stands for the modulo-q addition operation; M(q, ZO) is a data array with randomly distributed symbols of q levels, where q is the number of levels and ZO is the seed used to generate the random multilevel data array.