Patents by Inventor Towfik H. Teherani

Towfik H. Teherani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5188988
    Abstract: A method of passivation of Hg.sub.1-x Cd.sub.x Te and similar semiconductors by surface oxidation (such as anodic) followed by chemical conversion of the oxide to either sulfide or selenide or a combination of both is disclosed. Preferred embodiments provide sulfide conversion by immersion of the oxide coated Hg.sub.1-x Cd.sub.x Te in a sodium sulfide solution in water with optional ethylene glycol and the selenidization by immersion in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such sulfide and selenide passivated Hg.sub.1-x Cd.sub.x Te are disclosed.
    Type: Grant
    Filed: November 26, 1990
    Date of Patent: February 23, 1993
    Assignee: Texas Instruments Incorporated
    Inventors: Towfik H. Teherani, D. Dawn Little
  • Patent number: 5036376
    Abstract: A method of passivation of Hg.sub.1-x Cd.sub.x Te and similar semiconductors by surface oxidation (such as anodic) followed by chemical conversion of the oxide to either sulfide or selenide or a combination of both is disclosed. Preferred embodiments provide sulfide conversion by immersion of the oxide coated Hg.sub.1-x Cd.sub.x Te in a sodium sulfide solution in water with optional ethylene glycol and the selenidization by immersion in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such sulfide and selenide passivated Hg.sub.1-x Cd.sub.x Te are disclosed.
    Type: Grant
    Filed: July 27, 1988
    Date of Patent: July 30, 1991
    Assignee: Texas Instruments Incorporated
    Inventors: Towfik H. Teherani, D. Dawn Little
  • Patent number: 4736104
    Abstract: A method of passivation of Hg.sub.1-x Cd.sub.x Te by anodic selenidization is disclosed; in preferred embodiments the selenidization is by anodic growing of the selenides in an electrolyte solution of sodium selenide in water and ethylene glycol or in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such selenide passivated Hg.sub.1-x Cd.sub.x Te are disclosed.
    Type: Grant
    Filed: July 29, 1987
    Date of Patent: April 5, 1988
    Assignee: Texas Instruments Incorporated
    Inventors: Towfik H. Teherani, D. Dawn Little
  • Patent number: 4726885
    Abstract: A method of passivation of HG.sub.1-x Cd.sub.x Te by anodic selenidization is disclosed; in preferred embodiments the selenidization is by anodic growing of the selenides in an electrolyte solution of sodium selenide in water and ethylene glycol or in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such selenide passivated Hg.sub.1-x Cd.sub.x Te are disclosed.
    Type: Grant
    Filed: February 7, 1986
    Date of Patent: February 23, 1988
    Assignee: Texas Instruments Incorporated
    Inventors: Towfik H. Teherani, D. Dawn Little
  • Patent number: 4632886
    Abstract: The disclosure relates to a method of passivating mercury cadmium telluride substrates wherein a substrate surface is lapped and cleaned and then placed in an electrolyte solution containing sulfide ions to electrolytically grow a sulfide passivating layer on the lapped and cleaned surface. A preferred electrolyte solution is formed with sodium sulfide, water and ethylene glycol.
    Type: Grant
    Filed: September 28, 1984
    Date of Patent: December 30, 1986
    Assignee: Texas Instruments Incorporated
    Inventors: Towfik H. Teherani, Arturo Simmons