Abstract: A heatsink-integrated insulating circuit board includes a heat sink including a radiating fin, an insulating resin layer formed on a top plate part of the heat sink, and a circuit layer arranged on one surface of the insulating resin layer. An angle ? formed between an end of the metal piece and a surface of the insulating resin layer is set to be 70° or more and 110° or less. Root-mean-square heights Sq1 and Rq1 in bonding surfaces to the insulating resin layer in the top plate part of the heat sink and the metal piece, and root-mean-square heights Sq2 and Rq1 in regions other than the bonding surfaces to the insulating resin layer in the top plate part of the heat sink and the metal piece have a relationship of Sq1>Sq2 or Rq1>Rq2.

Abstract: There is provided an insulating resin circuit substrate including an insulating resin layer and a circuit layer consisting of a plurality of metal pieces disposed to be spaced apart in a circuit pattern shape on one surface of the insulating resin layer, in which in a case where a surface of the insulating resin layer in a gap between the metal pieces is analyzed by SEM-EDX, the area rate of a metal element constituting the metal pieces is less than 2.5%.

Abstract: There is provided a manufacturing method for an insulating resin circuit substrate, which is a manufacturing method for an insulating resin circuit substrate which includes an insulating resin layer composed of a polyimide resin and a circuit layer consisting of metal pieces disposed in a circuit pattern shape on one surface of the insulating resin layer. The manufacturing method includes a temporary fixing step of pressurizing the metal pieces toward the resin sheet material while heating the metal pieces to temporarily fix the metal pieces and a joining step of disposing a cushion material on a side of the metal pieces which are temporarily fixed and pressurizing the metal pieces and the resin sheet material in a laminating direction, while heating the metal pieces and the resin sheet material, to join the resin sheet material and the metal pieces.

Abstract: An insulated circuit substrate manufacturing method of the present invention includes a metal piece disposing step of disposing the metal piece in a circuit pattern shape on a resin material serving as the insulating resin layer and a bonding step of bonding the insulating resin layer and the metal piece by pressurizing and heating the resin material and the metal piece at least in a laminating direction. In the bonding step, the metal piece and the resin material are pressurized in the laminating direction by a pressurizing jig that includes a cushion material disposed on a side of the metal piece and a guide wall portion disposed at a position facing a peripheral portion of the cushion material, and the peripheral portion of the cushion material is brought into contact with the guide wall portion during pressurization.

Abstract: This heat sink integrated insulating circuit substrate includes: a heat sink including a top plate part and a cooling fin; an insulating resin layer formed on the top plate part of the heat sink; and a circuit layer made of metal pieces arranged on a surface of the insulating resin layer opposite to the heat sink, wherein, when a maximum length of the top plate part is defined as L, an amount of warpage of the top plate part is defined as Z, and deformation of protruding toward a bonding surface side of the top plate part of the heat sink is defined as a positive amount of warpage, and a curvature of the heat sink is defined as C=|(8×Z)/L2|, a ratio P/Cmax between a maximum curvature Cmax(l/m) of the heat sink during heating from 25° C. to 300° C. and peel strength P (N/cm) of the insulating resin layer satisfies P/Cmax>60.

Abstract: Provided is an insulating circuit board including: an insulating resin layer; and a circuit layer made of metal pieces, each of which is in a circuit pattern and provided on one surface of the insulating resin layer, wherein thickness of each of the metal pieces constituting the circuit layer is 0.5 mm or more, the insulating resin layer is made of a thermosetting resin, and a void ratio in regions between the metal pieces is 0.8% or less.

Abstract: An insulating circuit substrate includes an insulating layer; and a circuit layer formed on one surface of the insulating layer, in which the insulating layer has a core layer formed of an epoxy resin containing an inorganic filler, and a skin layer formed on the circuit layer side of the core layer and formed of a polyimide resin containing an inorganic filler, an amount of the inorganic filler in the epoxy resin forming the core layer is in a range of 80 vol % or more and 95 vol % or less, and an amount of the inorganic filler in the polyimide resin forming the skin layer is in a range of 10 vol % or more and 30 vol % or less.

Abstract: An insulating circuit substrate includes an insulating layer; and a circuit layer formed on one surface of the insulating layer, in which the insulating layer has a core layer formed of an epoxy resin containing an inorganic filler, and a skin layer formed on the circuit layer side of the core layer and formed of a polyimide resin containing an inorganic filler, an amount of the inorganic filler in the epoxy resin forming the core layer is in a range of 80 vol % or more and 95 vol % or less, and an amount of the inorganic filler in the polyimide resin forming the skin layer is in a range of 10 vol % or more and 30 vol % or less.

Abstract: The method for manufacturing an insulated circuit board of the present invention includes: a ceramic/aluminum-joining step of joining an aluminum material to a ceramic substrate and thereby, forming an aluminum layer; a titanium material-disposing step of disposing a titanium material on a surface of the aluminum layer or the aluminum material in a circuit pattern shape; a titanium layer-forming step of performing a heat treatment in a state where the titanium material is laminated on the surface of the aluminum layer or the aluminum material and thereby, forming the titanium layer; and an etching treatment step of etching the aluminum layer on which the titanium layer is formed, into the circuit pattern shape.

Abstract: A power module substrate of the present invention includes a ceramic substrate and a circuit layer having a circuit pattern. In an interface between the circuit layer and the ceramic substrate, a Cu—Sn layer and a Ti-containing layer are laminated in this order from the ceramic substrate side. In a cross-sectional shape of an end portion of the circuit pattern of the circuit layer, an angle ? formed between a surface of the ceramic substrate and an end face of the Cu—Sn layer is set in a range equal to or greater than 80° and equal to or smaller than 100°, and a maximum protrusion length L of the Cu—Sn layer or the Ti-containing layer from an end face of the circuit layer is set in a range equal to or greater than 2?m and equal to or smaller than 15 ?m.

Abstract: A power module substrate of the present invention includes a ceramic substrate and a circuit layer having a circuit pattern. In an interface between the circuit layer and the ceramic substrate, a Cu—Sn layer and a Ti-containing layer are laminated in this order from the ceramic substrate side. In a cross-sectional shape of an end portion of the circuit pattern of the circuit layer, an angle ? formed between a surface of the ceramic substrate and an end face of the Cu—Sn layer is set in a range equal to or greater than 80° and equal to or smaller than 100°, and a maximum protrusion length L of the Cu—Sn layer or the Ti-containing layer from an end face of the circuit layer is set in a range equal to or greater than 2?m and equal to or smaller than 15 ?m.

Abstract: The method for manufacturing an insulated circuit board of the present invention includes: a ceramic/aluminum-joining step of joining an aluminum material to a ceramic substrate and thereby, forming an aluminum layer; a titanium material-disposing step of disposing a titanium material on a surface of the aluminum layer or the aluminum material in a circuit pattern shape; a titanium layer-forming step of performing a heat treatment in a state where the titanium material is laminated on the surface of the aluminum layer or the aluminum material and thereby, forming the titanium layer; and an etching treatment step of etching the aluminum layer on which the titanium layer is formed, into the circuit pattern shape.

Abstract: A power module is disclosed, including a power module substrate in which a circuit layer is arranged on one surface of an insulating layer; and a semiconductor element that is bonded onto the circuit layer, in which a copper layer composed of copper or a copper alloy is provided on a surface of the circuit layer to be bonded to the semiconductor element, a solder layer formed by using a solder material between the circuit layer and the semiconductor element is provided, an alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu at an interface of the solder layer with the circuit layer is formed, and the coverage of the alloy layer at the interface is 85% or more.

Abstract: A power module is disclosed, including a power module substrate in which a circuit layer is arranged on one surface of an insulating layer; and a semiconductor element that is bonded onto the circuit layer, in which a copper layer composed of copper or a copper alloy is provided on a surface of the circuit layer to be bonded to the semiconductor element, a solder layer formed by using a solder material between the circuit layer and the semiconductor element is provided, an alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu at an interface of the solder layer with the circuit layer is formed, and the coverage of the alloy layer at the interface is 85% or more.