Abstract: A fuel cutoff valve is equipped with a casing main body having a valve chamber that forms a connection hole that is an opening to the valve chamber side on an upper wall, a cover that forms a pipe which forms a pipe passage, and a float housed inside the valve chamber. The cover is equipped with a pipe extended part which is provided extending inside the linking chamber from the pipe in a tube shape facing the connection hole and on an substantially straight line, the pipe extended part has an extended passage 45 connected to the pipe passage, the extended passage has an inflow port that opens to the linking chamber, and the inflow port is provided on the side opposite the pipe with the connection hole as the center.

Abstract: A light-emitting module includes: an LED lamp comprising; a flexible board; and a connection member that sandwiches and fixes the LED lamp and the flexible board. An electrode portion of the flexible board is pressed against an external electrode of the LED lamp by the connection member, whereby the external electrode directly contacts and is electrically connected to the electrode portion. A portion of the connection member highest from the substrate is lower than a portion of the sealing body highest from the substrate.

Abstract: A method for manufacturing a Group III nitride semiconductor light-emitting element of the invention includes a substrate-processing process of forming a main surface including a flat surface and a convex portion 13 on the substrate 10, an epitaxial process of epitaxially growing an underlying layer on the main surface of the substrate 10 so as to cover the flat surface and the convex portion 13, and an LED lamination process of forming an LED structure by epitaxially growing a Group III nitride semiconductor. In the substrate-processing process, mask patterns 15 are sequentially formed in respective regions R1 and R2 of the flat surface using a polygonal reticle 51 having two pairs of parallel opposing ends in a plan view, by a stepper exposure method, and then the flat surface is etched to dispose and form three arbitrary convex portions 13, which are arranged to be adjacent to each other, in an isosceles triangular shape in a plan view.

Abstract: A light-emitting device includes a light-emitting element mounted on a lead frame, and a sealing material sealing the light-emitting element and having a thickness of not more than 1 mm and including a silicone resin as a main component. The sealing material includes a first gas barrier layer that a physical property value obtained by dividing a difference between a value of an average spin-spin relaxation time of 1H nuclei at a resonance frequency of 25 MHz at 140° C. and that at 25° C. by 115 is not more than 3.5 and the average spin-spin relaxation time at 140° C. is not more than 500 ?sec.

Abstract: A movable side mounting portion transmits extension and contraction of a polymer actuator to an electric prosthetic hand. The polymer actuator deforms elastically in accordance with voltage application and returns to its original shape in accordance with stoppage of voltage application. A rear end of the polymer actuator is fixed and a front end of the polymer actuator is movable. When one of a pair of electrodes of the polymer actuator is electrically connected to the fixed side mounting portion, the fixed end is fastened by a bolt to the fixed side mounting portion. Also, when the other electrode is electrically connected to the movable side mounting portion, the movable end is fastened by a bolt to the movable side mounting portion.

Abstract: A semiconductor light emitting device includes: a first conductivity type semiconductor layer; a light emission layer; a second conductivity type semiconductor layer; a conductive portion of a first polarity electrically connected to the first conductivity type semiconductor layer; and a conductive portion of a second polarity electrically connected to the second conductivity type semiconductor layer. At least one of the conductive portion of the first polarity and the conductive portion of the second polarity includes a plurality of separated electrode portions arranged on a light emission surface. The closer the positions of the separated electrode portions are to a center point of the light emission surface, the separated electrode portions are provided sparsely, and the farther the positions of the separated electrode portions are from a center point of the light emission surface, the separated electrode portions are provided densely.

Abstract: An airbag includes a check valve in a communication passage connecting a lumbar-region-protecting inflatable portion and a shoulder-protecting inflatable portion. The check valve restricts outflow of inflation gas from the lumbar-region-protecting inflatable portion to the shoulder-protecting inflatable portion. A pressure regulation valve, which has an internal opening and a pair of valve body elements, is provided in a partitioning member between the shoulder-protecting inflatable portion and a thorax-protecting inflatable portion. Before an occupant is restrained by the shoulder-protecting inflatable portion, the valve body elements are pressed and contact with each other by inflation gas in the shoulder-protecting inflatable portion, thereby restricting flow of inflation gas at the internal opening.

Abstract: A side airbag apparatus has an inflatable portion, which is deployed and inflated on a side of a seat of a vehicle by inflation gas. The inflatable portion is divided into upstream and downstream sections by a partitioning member including a valve having an opening and a pair of valve body elements. Immediately after the beginning of the supplying of the gas, the valve body elements remain in contact with each other to close the valve. When the upstream section restrains an occupant, a force is exerted to the partitioning member by the occupant, which causes the partitioning member to warp and the valve body elements to be separated from each other to open the valve. The upstream section has a shoulder-protecting portion, which is deployed and inflated on a side of a region of the occupant including a rear end part and a middle part of a shoulder.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor single crystal having excellent crystallinity, and a method for producing a GaN substrate having excellent crystallinity, the method including controlling melting back. Specifically, a mask layer is formed on a GaN substrate serving as a growth substrate. Then, a plurality of trenches which penetrate the mask layer and reach the GaN substrate are formed through photolithography. The obtained seed crystal and raw materials of a single crystal are fed to a crucible and subjected to treatment under pressurized and high temperature conditions. Portions of the GaN substrate exposed to the trenches undergo melting back with a flux. Through dissolution of the GaN substrate, the dimensions of the trenches increase, to provide large trenches. The GaN layer is grown from the surface of the mask layer as a starting point.

Abstract: An airbag includes an airbag body and an inner tube. The inner tube includes a gas upstream section located in an upstream region of an inflation gas stream fed from a gas generator and a gas outlet section that opens toward an inflatable region of the airbag body and feeds an inflation gas to the inflatable region. The gas outlet section includes a check valve section. The check valve section has a flexible and a generally tubular shape extending and opening toward the inflatable region due to pressure of an inflation gas so as to stream the inflation gas into the inflatable region. After the gas generator has finished discharging the inflation gas, the check valve section folds back toward the gas upstream section due to an internal pressure of the inflatable region and closes off the gas outlet section.

Abstract: A method of manufacturing a semiconductor device comprises a mounting step of mounting a semiconductor element having an Au—Sn layer on a substrate, wherein the mounting step includes a paste supplying step of supplying an Ag paste having an Ag nanoparticle onto the substrate, a device mounting step of mounting a side of the Au—Sn layer of the semiconductor element on the Ag paste, and a bonding step of alloying the Au—Sn layer and the Ag paste to bond the semiconductor element to the substrate, wherein the Au—Sn layer has a content rate of Au of 50 at % to 85 at %.

Abstract: A vehicle plastic window includes a plastic structure. The outer part of the vehicle plastic window is formed by a transparent outer plastic portion. The inner part of the vehicle plastic window is formed by an opaque inner plastic portion. The inner plastic portion is formed integrally with the outer plastic portion from the inner side by the two-color molding. A lamp installing portion is formed integrally with a rear inner plastic portion from the inner side. The lamp installing portion is provided for attaching a lamp, which emits light to the outside, to the vehicle plastic window. The rear inner plastic portion has a transmission portion, which transmits light from the lamp.

Abstract: In a semiconductor light emitting element 1 having a sapphire substrate 100, and a lower semiconductor layer 210 and an upper semiconductor layer 220 laminated on the sapphire substrate 100, the sapphire substrate 100 includes a substrate top surface 113, a substrate bottom surface 114, first substrate side surfaces 111 and second substrate side surfaces 112; plural first cutouts 121a and plural second cutouts 122a are provided at a border between the first substrate side surface 111, the second substrate side surface 112 and the substrate top surface 113; the lower semiconductor layer 210 includes a lower semiconductor bottom surface, a lower semiconductor top surface 213, first lower semiconductor side surfaces 211 and second lower semiconductor side surfaces 212; plural first projecting portions 211a and plural first depressing portions 211b are provided on the first lower semiconductor side surface 211; and plural second protruding portions 212a and second flat portions 212b are provided on the second low

Abstract: An airbag device for a vehicle including at least one airbag housing interface chamber that attaches to an airbag housing; at least one airbag cushion chamber downstream of the at least one interface chamber; an elbow that fluidly connects the housing interface chamber with the cushion chamber and configured so that it controllably regulates gas flow into the at least one airbag cushion chamber; the elbow having an internal configuration, which includes at least one opening that permits back and forth gas flow between the elbow and the least one airbag cushion chamber, and which controls the directional deployment of the airbag cushion chamber so that upon deployment the downstream end of the cushion chamber exits an airbag housing outwardly in a first direction and then in at least one second direction, so that the direction of deployment of the cushion chamber changes in direction to thereby wrap at least partially around a structure of a vehicle of the vehicle and at least temporarily interpose the cushion

Abstract: A light-emitting device includes a substrate, and a plurality of light-emitting elements that are mounted on the substrate and each include an LED chip and a phosphor layer on a surface thereof. A maximum deviation in a value of a chromaticity coordinate x of light emitted from the plurality of light-emitting elements is not less than 0.0125.

Abstract: A light-emitting device includes a substrate, and a plurality of light-emitting elements that are mounted on the substrate and each emit light within a same color region. The plurality of light-emitting elements satisfy at least one of a first condition and a second condition. The first condition is that a maximum deviation in peak wavelength of light emitted from the plurality of light-emitting elements is not less than 1.25 nm. The second condition is that a maximum deviation in threshold voltage of the plurality of light-emitting elements is not less than 0.05 V.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device which is intended to relax stress applied to a light-emitting layer. The light-emitting device includes an MQW layer, and an n-side superlattice layer formed below the MQW layer. The n-side superlattice layer is formed by repeatedly depositing layer units, each unit including an InGaN layer, a GaN layer, and an n-GaN layer which are sequentially deposited from the side of the sapphire substrate. In the n-side superlattice layer, an InGaN layer more proximal to the MQW layer has a higher In compositional proportion. The In compositional proportion of the InGaN layer (which is most proximal to the MQW layer) of the n-side superlattice layer is 70% to 100% of the In compositional proportion of the InGaN layer (which is most proximal to the n-side superlattice layer) of the MQW layer.

Abstract: The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28?n×d1×2/??0.42 or 0.63?n×d1×2/??0.77, wherein n represents the refractive index of the transparent film, d1 represents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and ? represents the wavelength of the light emitted from the MQW layer.

Abstract: The present invention provides a MIS type semiconductor device having a ZrOxNy gate insulating film wherein threshold voltage is stable. In the MIS type semiconductor device with an operating voltage of 5 V or more, having a gate insulating film on a Si semiconductor layer and a gate electrode on the gate insulating film, the gate insulating film is formed of ZrOxNy (here, x and y satisfy the following conditions: x>0, y>0, 0.3?y/x?10, and 1.5?0.55x+y?1.7). The MIS type semiconductor device having such gate insulating film can be stably operated because the threshold voltage does not fluctuate even if a large voltage is applied.

Abstract: A method of manufacturing a light-emitting device includes placing a phosphor-containing film on a mold for compression molding, the mold having a concave portion of a predetermined shape and the film being placed along an inner wall of the concave portion, supplying a resin material on the phosphor-containing film in the concave portion, immersing a light-emitting element mounted on a substrate in the resin material in the concave portion, and applying pressure and heat to the resin material and the phosphor-containing film, thereby forming a transparent sealing resin for sealing the light-emitting element and a phosphor-containing layer covering a surface thereof.