Abstract: Provided herein is a photocatalytic device that is easy to maintain. A photocatalytic device is provided that includes a cabinet, a photocatalytic unit disposed inside the cabinet and including a photocatalyst, a light configured to provide light to the photocatalyst, and a fan configured to send airflow to a surface of the photocatalyst. The photocatalytic unit is configured to be detachable from the cabinet.

Abstract: A wall attachment system is provided that includes an object to be mounted, and an attachment unit for attaching the object to be mounted to a wall surface. The object to be mounted has a back surface installed with a metal. The attachment unit has a front surface installed with a magnet. The wall attachment system is configured so that the metal and the magnet contact each other in response to the object to be mounted being set in position for installation on the attachment unit.

Abstract: A wall attachment system is provided that includes an object to be mounted, and an attachment unit for attaching the object to be mounted to a wall surface. The object to be mounted has a back surface installed with a metal. The attachment unit has a front surface installed with a magnet. The wall attachment system is configured so that the metal and the magnet contact each other in response to the object to be mounted being set in position for installation on the attachment unit.

Abstract: Provided herein is a photocatalytic device that is easy to maintain. A photocatalytic device is provided that includes a cabinet, a photocatalytic unit disposed inside the cabinet and including a photocatalyst, a light configured to provide light to the photocatalyst, and a fan configured to send airflow to a surface of the photocatalyst. The photocatalytic unit is configured to be detachable from the cabinet.

Abstract: A formation method of an element isolation film according to which a high-voltage transistor with an excellent characteristic can be formed is provided. On a substrate, a gate oxide film is previously formed. A CMP stopper film is formed thereon, and thereafter, a gate oxide film and a CMP stopper film are etched. The semiconductor substrate is etched to form a trench. Further, before the trench is filled with a field insulating film, a liner insulating film is formed at a trench interior wall, and a concave portion at the side surface of the gate oxide film under the CMP stopper film is filled with the liner insulating film. In this manner, formation of void in the element isolation film laterally positioned with respect to the gate oxide film can be prevented.

Abstract: A formation method of an element isolation film according to which a high-voltage transistor with an excellent characteristic can be formed is provided. On a substrate, a gate oxide film is previously formed. A CMP stopper film is formed thereon, and thereafter, a gate oxide film and a CMP stopper film are etched. The semiconductor substrate is etched to form a trench. Further, before the trench is filled with a field insulating film, a liner insulating film is formed at a trench interior wall, and a concave portion at the side surface of the gate oxide film under the CMP stopper film is filled with the liner insulating film. In this manner, formation of void in the element isolation film laterally positioned with respect to the gate oxide film can be prevented.

Abstract: A formation method of an element isolation film according to which a high-voltage transistor with an excellent characteristic can be formed is provided. On a substrate, a gate oxide film is previously formed. A CMP stopper film is formed thereon, and thereafter, a gate oxide film and a CMP stopper film are etched. The semiconductor substrate is etched to form a trench. Further, before the trench is filled with a field insulating film, an liner insulating film is formed at a trench interior wall, and a concave portion at the side surface of the gate oxide film under the CMP stopper film is filled with the liner insulating film. In this manner, formation of void in the element isolation film laterally positioned with respect to the gate oxide film can be prevented.

Abstract: A formation method of an element isolation film according to which a high-voltage transistor with an excellent characteristic can be formed is provided. On a substrate, a gate oxide film is previously formed. A CMP stopper film is formed thereon, and thereafter, a gate oxide film and a CMP stopper film are etched. The semiconductor substrate is etched to form a trench. Further, before the trench is filled with a field insulating film, an liner insulating film is formed at a trench interior wall, and a concave portion at the side surface of the gate oxide film under the CMP stopper film is filled with the liner insulating film. In this manner, formation of void in the element isolation film laterally positioned with respect to the gate oxide film can be prevented.

Abstract: A semiconductor device comprising: a silicon nitride film formed on a semiconductor substrate having a first wiring layer; a first silicon oxide film formed on said silicon nitride film; and a second silicon oxide film formed on said first silicon oxide film by way of an atmospheric pressure CVD process using tetraethyl orthosilicate, siloxane, or disilazane as a source material.