Abstract: An etching control system includes a prediction device and an etching control device. The prediction device includes an updating unit configured to update, to optimize a model indicating a relationship between distribution of an etching amount within a surface of a substrate and a process parameter, which is a parameter of controlling operations of multiple nozzles configured to etch the substrate, a parameter of the model; a calculator configured to calculate the process parameter corresponding to distribution of a designated etching amount by using the model whose parameter has been updated by the updating unit; and a provider configured to provide the process parameter calculated by the calculator. The etching control device includes an acquisition unit configured to acquire the process parameter; and an operation controller configured to control the operations of the multiple nozzles by using the process parameter acquired by the acquisition unit.

Abstract: An etching control system includes a prediction device and an etching control device. The prediction device includes a calculator configured to calculate, by using a model indicating a relationship between distribution of an etching amount within a surface of a substrate and a process parameter, which is a parameter of controlling operations of multiple nozzles configured to etch the substrate, the process parameter corresponding to distribution of a designated etching amount. The etching control device includes an updating unit configured to update a process recipe, which is information including a discharge time, a discharge position, and a moving speed of each of the multiple nozzles, based on the process parameter; and an operation controller configured to control the operations of the multiple nozzles according to the process recipe updated by the updating unit.

Abstract: An etching control device includes an updating unit configured to update, to optimize a model indicating a relationship between distribution of an etching amount within a surface of a substrate and a process parameter, which is a parameter of controlling operations of multiple nozzles configured to etch the substrate, a parameter of the model; a calculator configured to calculate the process parameter corresponding to distribution of a designated etching amount by using the model whose parameter has been updated by the updating unit; and an operation controller configured to control the operations of the multiple nozzles by using the process parameter.

Abstract: A substrate processing control method in a substrate processing apparatus, includes: acquiring a data set for each substrate sequentially subjected to first and second processes at first and second levels, the data set including information specifying the first level at which the first process has been performed, information specifying the second level at which the second process has been performed and information about a characteristic amount relating to characteristics of the substrate; calculating information including an expected value of the characteristic amount, and level deviations of the first and second levels to the expected value based on the data set, and correcting the first parameter at the first level or the second parameter at the second level based on the calculated information.

Abstract: A substrate treatment method includes: generating, for each of layers constituting a stacked film on a substrate, a captured image of the substrate after a treatment regarding a relevant layer; and acquiring information indicating a feature amount estimated based on the captured image for each of a plurality of layers including an outermost layer of the stacked film on the substrate.

Abstract: A substrate processing control method in a substrate processing apparatus, includes: acquiring a data set for each substrate sequentially subjected to first and second processes at first and second levels, the data set including information specifying the first level at which the first process has been performed, information specifying the second level at which the second process has been performed and information about a characteristic amount relating to characteristics of the substrate; calculating information including an expected value of the characteristic amount, and level deviations of the first and second levels to the expected value based on the data set; and correcting the first parameter at the first level or the second parameter at the second level based on the calculated information.

Abstract: Various embodiments of systems and methods for calibrating wafer inspection system modules are disclosed herein. More specifically, the present disclosure provides various embodiments of systems and methods to calibrate the multiple spectral band values obtained from a substrate by a camera system included within a WIS module. In one embodiment, multiple spectral band values are red, green, and blue (RGB) values. As described in more detail below, the calibration methods disclosed herein may use a test wafer having a predetermined pattern of thickness changes or color changes to generate multiple spectral band offset values. The multiple spectral band offset values can be applied to the multiple spectral band values obtained from the substrate to generate calibrated RGB values, which compensate for spectral responsivity differences between camera systems included within a plurality of WIS modules.

Abstract: A control parameter setting method for setting control parameters of film forming modules included, includes: acquiring a first parameter group including control parameters for controlling a film forming process in a first film forming module, and a second parameter group including control parameters for controlling a film forming process in a second film forming module; acquiring a film thickness value of a processed film on a substrate subjected to film formation by the first film forming module based on the first parameter group, and a film thickness value of a processed film on a substrate subjected to film formation by the second film forming module based on the second parameter group; and updating the first parameter group and the second parameter group so that a difference between the film thickness values acquired in the first film forming module and the second film forming module is reduced.

Abstract: An information processing method includes obtaining information on a deformation factor of a surface of a target substrate; obtaining a surface image of the target substrate; calculating a correction coefficient for correcting an image change due to deformation of the surface, based on the information on the deformation factor of the surface; and generating a corrected image of the target substrate by correcting the surface image of the target substrate using the correction coefficient.

Abstract: A substrate processing apparatus includes: an imaging portion configured to acquire a surface image of a film formed on a surface of a substrate; an optical property estimation portion configured to estimate an optical property of the film based on process information acquired during formation of the film; and a film thickness estimation portion configured to estimate a film thickness of the film based on the surface image and an estimation result of the optical property.

Abstract: A substrate inspection system includes an imaging unit provided in a substrate processing apparatus and configured to acquire image data by imaging a surface of a substrate for color information on which a film is formed; a film thickness measurement unit provided in the substrate processing apparatus and configured to measure a film thickness of a substrate for film thickness measurement on which a film is formed under same conditions as on the substrate for color information; and a model creation unit configured to create a film thickness model corresponding to a correlation between information about color change on the surface of the substrate for color information caused by forming the film, which is acquired based on the image data, and the film thickness of the substrate for film thickness measurement, which is measured by the film thickness measurement unit.

Abstract: An apparatus includes: a processed-image acquisition part for acquiring a processed image including image information of a surface of a substrate having a target film formed thereon; an estimation part for estimating a shape characteristic value of the target film, by applying an estimation model for estimating the shape characteristic value of the target film to the processed image; an underlying influence model creation part for creating an underlying influence model associated with a correlation between a difference between an estimation result of the shape characteristic value of the target film and a shape characteristic value of the target film acquired without using the estimation model, and information related to a color of a surface of an underlying substrate before the target film is formed, and an estimated-result correction part for correcting the estimation result of the shape characteristic value of the target film based on the underlying influence model.

Abstract: A method of inspecting a substrate, includes: creating a model indicating a relation between a pixel value in a captured image of the substrate and a feature amount of a film on the substrate, based on a measured feature amount of a film on a creating substrate and a captured image generated by imaging the creating substrate by an apparatus in a first system; imaging an object substrate by an apparatus in a second system to generate a captured image, and calculating an estimated feature amount of a film on the object substrate, based on the captured image and the model; calculating a statistical value of the estimated feature amounts of the object substrates; and calculating an offset amount for the estimated feature amount from a measured feature amount of a film formed by performing a same treatment on an offset substrate in the second system and the statistical value.

Abstract: A device for creating a shape characteristic value estimation model for estimating a shape characteristic value includes: a post-processing-image acquisition part for acquiring a post-processing image of a surface of a substrate subjected to film processing; a pre-processing-image acquisition part for acquiring a pre-processing image of the surface not subjected to the film processing; a color-change estimation model creation part for creating a color-change estimation model for estimating first color-related information of the surface of the substrate included in the post-processing image from second color-related information of the surface of the substrate included in the pre-processing image; and a correlation estimation model creation part for creating a correlation estimation model by obtaining a difference between the first information and a result estimated by the color-change estimation model, the correlation estimation model being used for estimating correlation between the difference and the shape c

Abstract: Various embodiments of systems and methods for monitoring thermal characteristics of substrates, substrate processes and/or substrate processing module components are disclosed herein. More specifically, the present disclosure provides various embodiments of a thermal imaging sensor within various substrate processing modules (e.g., a liquid dispense module, a baking module or combined bake module, an interface block, a wafer inspection system (WIS) module, a plating dispense module or another processing module) of a substrate processing system. By positioning the thermal imaging sensor at various locations within the substrate processing system, the present disclosure enables thermal data to be remotely collected from the substrate surface, a liquid dispensed onto the substrate surface, a processing space surrounding the substrate, or a component included within a substrate processing module (e.g.

Abstract: An information processing apparatus includes a prediction unit configured to calculate, based on a film thickness model representing a relationship between a state of a substrate processing apparatus and a film thickness of a coating film formed on a front surface of a substrate by the substrate processing apparatus and pre-data representing the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus, a predicted film thickness when the substrate is processed by the substrate processing apparatus; and an output unit configured to output, based on the predicted film thickness, instruction information on a processing of the substrate before the substrate is processed by the substrate processing apparatus.

Abstract: An information processing method includes obtaining information on a deformation factor of a surface of a target substrate; obtaining a surface image of the target substrate; calculating a correction coefficient for correcting an image change due to deformation of the surface, based on the information on the deformation factor of the surface; and generating a corrected image of the target substrate by correcting the surface image of the target substrate using the correction coefficient.

Abstract: An apparatus includes: a processed-image acquisition part for acquiring a processed image including image information of a surface of a substrate having a target film formed thereon; an estimation part for estimating a shape characteristic value of the target film, by applying an estimation model for estimating the shape characteristic value of the target film to the processed image; an underlying influence model creation part for creating an underlying influence model associated with a correlation between a difference between an estimation result of the shape characteristic value of the target film and a shape characteristic value of the target film acquired without using the estimation model, and information related to a color of a surface of an underlying substrate before the target film is formed, and an estimated-result correction part for correcting the estimation result of the shape characteristic value of the target film based on the underlying influence model.

Abstract: A substrate treatment method includes: generating, for each of layers constituting a stacked film on a substrate, a captured image of the substrate after a treatment regarding a relevant layer; and acquiring information indicating a feature amount estimated based on the captured image for each of a plurality of layers including an outermost layer of the stacked film on the substrate.

Abstract: Various embodiments of systems and methods for calibrating wafer inspection system modules are disclosed herein. More specifically, the present disclosure provides various embodiments of systems and methods to calibrate the multiple spectral band values obtained from a substrate by a camera system included within a WIS module. In one embodiment, multiple spectral band values are red, green, and blue (RGB) values. As described in more detail below, the calibration methods disclosed herein may use a test wafer having a predetermined pattern of thickness changes or color changes to generate multiple spectral band offset values. The multiple spectral band offset values can be applied to the multiple spectral band values obtained from the substrate to generate calibrated RGB values, which compensate for spectral responsivity differences between camera systems included within a plurality of WIS modules.