Abstract: There is provided a pre-applied semiconductor sealing film for curing under pressure atmosphere as a non conductive film (NCF) suitable for pressure mounting. This NCF includes (A) a solid epoxy resin, (B) an aromatic amine which is liquid at room temperature and contains at least one of structures represented by formulae 1 and 2 below, (C) a silica filler, and (D) a polymer resin having a mass average molecular weight (Mw) of 6000 to 100000. The epoxy resin of the component (A) has an epoxy equivalent weight of 220 to 340. The component (B) is included in an amount of 6 to 27 parts by mass relative to 100 parts by mass of the component (A). The component (C) is included in an amount of 20 to 65 parts by mass relative to 100 parts by mass in total of the components. A content ratio ((A):(D)) between the component (A) and the component (D) is 99:1 to 65:35. This NCF further has a melt viscosity at 120° C. of 100 Pa·s or less, and has a melt viscosity at 120° C., after heated at 260° C.

Abstract: An object of the present invention is to provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed. A semiconductor device 1 includes a semiconductor chip 20 and a substrate 10 that are molded with a mold resin layer 40. The semiconductor device 1 includes a resin layer 50 having a thickness of 200 nm or less different from the mold resin layer 40 between the cured mold resin layer 40 and the substrate 10. The resin layer 50 present between the mold resin layer 40 and the substrate 10 is preferably present on a periphery of 30% or more of the chip when an entire peripheral length of the chip is 100%.

Abstract: An object of the present invention is to provide a resin composition in which voids are suppressed during application, the voids and delamination are suppressed after reflow subsequent to mounting and a moisture absorption resistance test, and the delamination and change in resistance value after curing are suppressed, when used in a pre-supply type process. Provided is the resin composition containing (A) an acrylate compound or methacrylate compound having a specific structure and not having an aliphatic cyclic structure, (B) an acrylate compound or a methacrylate compound having an aliphatic cyclic structure and not having a structure of Chemical Formula (1), (C) an acid anhydride-modified polybutadiene compound, (D) silica particles, and (E) a polymerization initiator.

Abstract: An object of the present invention is to provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed. A semiconductor device 1 includes a semiconductor chip 20 and a substrate 10 that are molded with a mold resin layer 40. The semiconductor device 1 includes a resin layer 50 having a thickness of 200 nm or less different from the mold resin layer 40 between the cured mold resin layer 40 and the substrate 10. The resin layer 50 present between the mold resin layer 40 and the substrate 10 is preferably present on a periphery of 30% or more of the chip when an entire peripheral length of the chip is 100%.

Abstract: There is provided a pre-applied semiconductor sealing film for curing under pressure atmosphere as a non conductive film (NCF) suitable for pressure mounting. This NCF includes (A) a solid epoxy resin, (B) an aromatic amine which is liquid at room temperature and contains at least one of structures represented by formulae 1 and 2 below, (C) a silica filler, and (D) a polymer resin having a mass average molecular weight (Mw) of 6000 to 100000. The epoxy resin of the component (A) has an epoxy equivalent weight of 220 to 340. The component (B) is included in an amount of 6 to 27 parts by mass relative to 100 parts by mass of the component (A). The component (C) is included in an amount of 20 to 65 parts by mass relative to 100 parts by mass in total of the components. A content ratio ((A):(D)) between the component (A) and the component (D) is 99:1 to 65:35. This NCF further has a melt viscosity at 120° C. of 100 Pa·s or less, and has a melt viscosity at 120° C., after heated at 260° C.

Abstract: Provided are a filled syringe and a method for storing a resin composition, which can suppress generation of a void between the resin composition and an inner surface of the syringe. A filled syringe 1 includes a syringe 10, a plunger 20, and a resin composition 30. When a longitudinal direction of the syringe 10 is a vertical direction and the plunger 20 is above the resin composition 30, a ratio of a cross-sectional area 25 of the plunger at a position of a liquid level 31 at top of the resin composition to a cross-sectional area 35 enclosed by an inner surface 11 of the syringe at the same position as the liquid level 31 at the top of the resin composition is 95% or less.

Abstract: Provided is a thermosetting resin composition, which can be used as underfill for obtaining favorable solder connectivity while suppressing the formation of voids in the case of treating under heating conditions required by the underfill in a semiconductor chip thermocompression bonding step using the thermal compression bonding technique. The thermosetting resin composition contains a thermosetting resin, a curing agent and a fluxing agent, and the temperature at which the rate of temperature change of viscosity when temperature is increased according to a prescribed heating profile reaches 30 Pa·s/° C. is 200° C. to 250° C.

Abstract: An object of the present invention is to provide a resin composition in which voids are suppressed during application, the voids and delamination are suppressed after reflow subsequent to mounting and a moisture absorption resistance test, and the delamination and change in resistance value after curing are suppressed, when used in a pre-supply type process. Provided is the resin composition containing (A) an acrylate compound or methacrylate compound having a specific structure and not having an aliphatic cyclic structure, (B) an acrylate compound or a methacrylate compound having an aliphatic cyclic structure and not having a structure of Chemical Formula (1), (C) an acid anhydride-modified polybutadiene compound, (D) silica particles, and (E) a polymerization initiator.

Abstract: Provided is a film adhesive which is preferably used as a NCF, void-free, has excellent electrical connectivity and its high reliability, does not develop cracks easily, and has high surface flatness. Also provided is a semiconductor device in which the film adhesive according to the present invention is used as an NCF during the manufacture of the semiconductor device. The film adhesive according to the present invention contains (A) an epoxy resin; (B) a bisphenol F type phenoxy resin; (C) a phenol resin-based curing agent; (D) a modified imidazole compound; (E) a silica filler; (F) oxyquinoline; and (G) a butadiene-acrylonitrile-methacrylic acid copolymer. The content of component (A) is 19.3 to 33.8 parts by mass. The content of component (B) is 7.5 to 9.1 parts by mass. The content of component (D) is 1.915 to 5 parts by mass. The content of component (E) is 30 to 60 parts by mass. The content of component (F) is 2.5 to 10 parts by mass.

Abstract: Provided is a film adhesive which is preferably used as a NCF, void-free, has excellent electrical connectivity and its high reliability, does not develop cracks easily, and has high surface flatness. Also provided is a semiconductor device in which the film adhesive according to the present invention is used as an NCF during the manufacture of the semiconductor device. The film adhesive according to the present invention contains (A) an epoxy resin; (B) a bisphenol F type phenoxy resin; (C) a phenol resin-based curing agent; (D) a modified imidazole compound; (E) a silica filler; (F) oxyquinoline; and (G) a butadiene-acrylonitrile-methacrylic acid copolymer. The content of component (A) is 19.3 to 33.8 parts by mass. The content of component (B) is 7.5 to 9.1 parts by mass. The content of component (D) is 1.915 to 5 parts by mass. The content of component (E) is 30 to 60 parts by mass. The content of component (F) is 2.5 to 10 parts by mass.

Abstract: Provided is a thermosetting resin composition, which can be used as underfill for obtaining favorable solder connectivity while suppressing the formation of voids in the case of treating under heating conditions required by the underfill in a semiconductor chip thermocompression bonding step using the thermal compression bonding technique. The thermosetting resin composition contains a thermosetting resin, a curing agent and a fluxing agent, and the temperature at which the rate of temperature change of viscosity when temperature is increased according to a prescribed heating profile reaches 30 Pa·s/° C. is 200° C. to 250° C.

Abstract: A method of predicting viscosity behavior of a thermosetting resin is provided that is capable of predicting viscosity behavior of a thermosetting resin and void generation in the underfill is suppressed while good solder connection is obtained.

Abstract: A method of predicting viscosity behavior of a thermosetting resin is provided that is capable of predicting viscosity behavior of a thermosetting resin and void generation in the underfill is suppressed while good solder connection is obtained.