Abstract: An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.

Abstract: An X-ray exposure apparatus comprises an X-ray mirror containing a material having an absorption edge only in at least either one of a wavelength region of less than 0.45 nm and a wavelength region exceeding 0.7 nm as to X-rays.

Abstract: In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 Å, emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1°, transmitting the light through a beryllium window of 20 &mgr;m and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 &mgr;m in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 Å and not more than 13 Å and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.

Abstract: An X-ray exposure method and an X-ray exposure apparatus using exposure X-rays having short wavelengths for formation of a fine pattern in X-ray lithography and suppressing fogging due to secondary electrons from a substrate bearing a resin film. The X-ray exposure method includes forming, by coating, a resist film on a substrate made of a material having an absorption-edge in or near an illumination wavelength range; and illuminating the resist film with X-rays having a wavelength range, including the absorption-edge wavelength, through an X-ray mask. The X-ray intensity is reduced in the wavelength range of an absorption spectrum including the absorption-edge of the material of the substrate in an optical path leading to the substrate.

Abstract: In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 Å, emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1°, transmitting the light through a beryllium window of 20 &mgr;m and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 &mgr;m in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 Å and not more than 13 Å and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.

Abstract: Provided are an X-ray exposure method and an X-ray exposure apparatus capable of using exposure X-rays of short wavelengths advantageous for formation of a fine pattern by suppressing a fogging effect due to secondary electrons from a substrate enhanced in company with use of the exposure X-rays of short wavelengths; and a fine structure and a semiconductor device using the same. An X-ray exposure method includes the steps of: forming, by coating, a resist film on a substrate made of a material having an absorption-edge in and near an illumination wavelength range; and illuminating said resist film with X-rays in a wavelength range including said absorption-edge wavelength through an X-ray mask, wherein exposure is performed providing means for reducing X-ray intensity in the wavelength range of an absorption spectrum to which the absorption-edge of the material of the substrate belongs in an optical path leading to the substrate.

Abstract: An exposure method, an exposure apparatus, an X-ray mask and a resist for achieving enhanced resolution and throughput compared with those having been accomplished are provided and further a semiconductor device and a microstructure manufactured by using them are provided. According to the exposure method, X rays emitted from an X-ray source are radiated to a resist film via an X-ray mask. A material constituting the resist film is selected to have an average wavelength of X rays absorbed by the resist film that is equal to or smaller than an average wavelength of X rays radiated to the resist film.

Abstract: An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.

Abstract: An X-ray exposure apparatus comprises an X-ray mirror containing a material having an absorption edge only in at least either one of a wavelength region of less than 0.45 nm and a wavelength region exceeding 0.7 nm as to X-rays.

Abstract: Synchrotron radiation is generated when a base of charged particles is bent by a bending magnet. The synchrotron radiation passes down a lead-out duct as the total number of pumps is limited by the size of the apparatus and many pumps are needed in order to achieve a good vacuum. An ion pump has a main magnetic field, normally generated by a magnet of the ion pump which controls the behavior of the electrons in the ion pump. However, the leakage magnetic field of the bending magnet affects the ion pump, and therefore the ion pump is arranged so that its main magnetic field is aligned with the leakage magnetic field at the ion pump, or at least with a main component thereof. In this way, the effect of the leakage magnetic field on the ion pump is reduced. Indeed, it is possible to use the leakage magnetic field as the main magnetic field of the ion pump.