Patents by Inventor Tracey Hawke

Tracey Hawke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220342297
    Abstract: A method and apparatus for the etching of variable depth features in a substrate is described. Movement of the substrate relative to an etchant (e.g. into or out of the etchant) during the etching process is utilised to provide a varying etch time, and hence depth, across the substrate, and in various examples this is enabled without requiring a varying mask.
    Type: Application
    Filed: August 20, 2020
    Publication date: October 27, 2022
    Applicant: BAE SYSTEMS plc
    Inventors: Ian Sturland, Mark Venables, Tracey Hawke, Rory Mills, Ian Macken
  • Patent number: 9656858
    Abstract: A method of reactive ion etching a substrate 46 to form at least a first and a second etched feature (42, 44) is disclosed. The first etched feature (42) has a greater aspect ratio (depth:width) than the second etched feature (44). In a first etching stage the substrate (46) is etched so as to etch only said first feature (42) to a predetermined depth. Thereafter in a second etching stage, the substrate (46) is etched so as to etch both said first and said second features (42, 44) to a respective depth. A mask (40) may be applied to define apertures corresponding in shape to the features (42, 44). The region of the substrate (46) in which the second etched feature (44) is to be produced is selectively masked with a second maskant (50) during the first etching stage, The second maskant (50) is then removed prior to the second etching stage.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: May 23, 2017
    Assignee: ATLANTIC INERTIAL SYSTEMS LIMITED
    Inventors: Tracey Hawke, Mark Venables, Ian Sturland, Rebecka Eley
  • Publication number: 20150021745
    Abstract: A method of reactive ion etching a substrate 46 to form at least a first and a second etched feature (42, 44) is disclosed. The first etched feature (42) has a greater aspect ratio (depth:width) than the second etched feature (44). In a first etching stage the substrate (46) is etched so as to etch only said first feature (42) to a predetermined depth. Thereafter in a second etching stage, the substrate (46) is etched so as to etch both said first and said second features (42, 44) to a respective depth. A mask (40) may be applied to define apertures corresponding in shape to the features (42, 44). The region of the substrate (46) in which the second etched feature (44) is to be produced is selectively masked with a second maskant (50) during the first etching stage, The second maskant (50) is then removed prior to the second etching stage.
    Type: Application
    Filed: July 21, 2014
    Publication date: January 22, 2015
    Applicant: Atlantic lnertial Systems Limited
    Inventors: Tracey Hawke, Mark Venables, lan Sturland, Rebecka Eley