Abstract: A multi-sensor module (10) includes a housing (12) with a plurality of vehicle operating condition sensors (S1-SN) mounted therein and a signal processing circuit (20, 26, 30) also mounted therein which receives sensor signals provided by the plurality of sensors (S1-SN). The signal processing circuit (20, 26, 30) is operable to produce at an output thereof (38) a time-division multiplexed signal representative of the various sensor signals according to a vehicle data bus communications protocol. The signal processing circuit output is connected to an electrical connector (36) adapted for connection to an existing vehicle data bus (18) which is further connected to a vehicle control computer (16). The signal processing circuit (20, 26, 30) is accordingly operable to broadcast on the vehicle data bus (18) sensor information provided by each of the sensors (S1-SN) mounted within the module (10).

Abstract: An IC voltage clamp and a process for forming the voltage clamp. The voltage clamp includes an MGFO device having an n-type source region, an n-type drain region, and a p-type field implant diffusion between the source and drain regions. The voltage clamp further employs a parasitic NPN device having a collector region coincident with the MGFO drain region, an emitter region coincident with the MGFO source region, and a base region formed by the substrate. A metal gate electrode overlies and is insulated from the field implant diffusion, but electrically connects the source and emitter regions to ground. An input electrode contacts the drain region so as to electrically connect the drain and collector regions to the input voltage of an integrated circuit. The field implant diffusion and drain/collector regions are formed by overlapping their masks, such that a lower breakdown voltage is achieved between the NPN collector and the substrate and field implant diffusion (the NPN base).

Abstract: An IC voltage clamp and a process for forming the voltage clamp. The voltage clamp includes an MGFO device having an n-type source region, an n-type drain region, and a p-type field implant diffusion between the source and drain regions. The voltage clamp further employs a parasitic NPN device having a collector region coincident with the MGFO drain region, an emitter region coincident with the MGFO source region, and a base region formed by the substrate. A metal gate electrode overlies and is insulated from the field implant diffusion, but electrically connects the source and emitter regions to ground. An input electrode contacts the drain region so as to electrically connect the drain and collector regions to the input voltage of an integrated circuit. The field implant diffusion and drain/collector regions are formed by overlapping their masks, such that a lower breakdown voltage is achieved between the NPN collector and the substrate and field implant diffusion (the NPN base).