Abstract: An integrated circuit die substrate has one or more capacitors attached to an edge surface of the substrate. The substrate has a top surface and a bottom surface, at least one of which includes a die mounting area, and at least one of which includes system interconnect terminals. A substrate edge surface is disposed along a peripheral end of the substrate and is oriented substantially orthogonally to the top and bottom surfaces. A pair of conductive edge terminals is disposed on the substrate edge surface. Each of the edge terminals is electrically coupled to a respective substrate conductor disposed on or inside the substrate. A capacitor is attached exteriorly to the substrate at the substrate edge surface such that terminals of the capacitor are electrically coupled to respective ones of the edge terminals. An integrated circuit die is attached at the die mounting area.

Abstract: Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.