Patents by Inventor Tran T. Hai

Tran T. Hai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell structure
    Patent number: 6611020
    Abstract: A new capacitor structure of a Flash memory (Flash) cells on a supporting substrate's existing topography, including existing topography provided by adjacent word lines is provided. The gate of the Flash memory cell is constructed as an integral part of the new capacitor cell structure. An increased capacitive coupling ratio is achieved whereby reduced programming voltage is required while yielding more a more compact memory cell structure. Hence, the requirements of low power densely packed integrated circuits is realized for smaller, portable microprocessor devices.
    Type: Grant
    Filed: March 6, 2001
    Date of Patent: August 26, 2003
    Assignee: Micron Technology, Inc.
    Inventor: Tran T. Hai
  • Method for forming a memory cell
    Patent number: 6319774
    Abstract: A new capacitor structure for Flash memory (Flash) cells on a supporting substrate's existing topography, including existing topography provided by adjacent word lines is provided. The gate of the Flash memory cell is constructed as an integral part of the new capacitor cell structure. An increased capacitive coupling ratio is achieved whereby reduced programming voltage is required while yielding more a more compact memory cell structure. Hence, the requirements of low power densely packed integrated circuits is realized for smaller, portable microprocessor devices. Methods for forming the above stated novel capacitor for Flash memory (Flash) cells on a supporting substrate's existing topography is similarly included.
    Type: Grant
    Filed: February 27, 1998
    Date of Patent: November 20, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Tran T. Hai
  • Apparatus and method for container floating gate cell
    Publication number: 20010020717
    Abstract: A new capacitor structure of a Flash memory (Flash) cells on a supporting substrate's existing topography, including existing topography provided by adjacent word lines is provided. The gate of the Flash memory cell is constructed as an integral part of the new capacitor cell structure. An increased capacitive coupling ratio is achieved whereby reduced programming voltage is required while yielding more a more compact memory cell structure. Hence, the requirements of low power densely packed integrated circuits is realized for smaller, portable microprocessor devices.
    Type: Application
    Filed: March 6, 2001
    Publication date: September 13, 2001
    Applicant: Micron Technology, Inc.
    Inventor: Tran T. Hai
  • Apparatus and method for container floating gate cell
    Patent number: 6218698
    Abstract: A new capacitor structure of a Flash memory (Flash) cells on a supporting substrate's existing topography, including existing topography provided by adjacent word lines is provided. The gate of the Flash memory cell is constructed as an integral part of the new capacitor cell structure. An increased capacitive coupling ratio is achieved whereby reduced programming voltage is required while yielding more a more compact memory cell structure. Hence, the requirements of low power densely packed integrated circuits is realized for smaller, portable microprocessor devices.
    Type: Grant
    Filed: August 17, 1998
    Date of Patent: April 17, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Tran T. Hai