Abstract: An apparatus and method for holding a solid precursor in a sublimator such that the solid precursor can be vaporized for saturating a carrier gas. The apparatus may include alternating disks or shelves that form inner and outer passages, as well as spaces between the disks for fluidicly coupling the passages to create a winding, tortuous fluid flow path through the sublimator for optimizing solid vapor saturation. The method may include directing a carrier gas into a sublimation chamber, around the first shelf in the outer passage, over the first shelf in the space, around the second shelf in the inner passage, and back out of the sublimation chamber.

Abstract: Novel methods and additives for stabilizing one or more cyclotetrasiloxane compounds for use in silicon film deposition are described herein. The disclosed methods and additives may utilize silicon-containing compounds to inhibit polymerization of one or more cyclotetrasiloxanes. In an embodiment, a method of stabilizing one or more cyclotetrasiloxane compounds for use in silicon film deposition comprises adding one or more additives to the one or more cyclotetrasiloxane compounds to inhibit polymerization of the cyclotetrasiloxane compound. The one or more additives may comprise an acrylate, a methacrylate, or a silane compound having the formula: where R1-R4 may each independently be an alkyl group, an alkoxy group, a heterocyclic group, an acryloxy group, a vinyl group, an epoxy group, a glycidyloxy group, or a hydrogen. R1-R4 may be the same or different from each other. The one or more additives may also comprise combinations of the above mentioned compounds.

Abstract: A method for purifying organosilicon precursor compounds is provided. It includes preparation of the adsorbent with a treating compound. The thus-treated adsorbents can be used to remove impurities such as organic impurities and moisture from a composition containing an organosilicon containing compound. In this manner, it is able to purify organosilicon precursors (or solutions containing organosilicon precursors) without inducing decomposition of the organosilicon precursor.