Abstract: A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.

Abstract: There is shown a device for retaining a knot of a shoelace. The device comprises a band with proximate and distal ends. The band is made of an elastic material, whereby the band may be stretched from a relaxed length to a stretched length. A rigid tab member comprises a proximate end portion connected to the proximate end of the elastic band, a distal end portion, and a lace slot cut entirely through the rigid tab member. A clip is affixed to the distal end of the elastic band for receiving the distal end portion in an attached state, wherein a force is applied by the elastic band attempting to retract the elastic band from its stretched length to its relaxed length, to maintain the distal end portion of the rigid tab member within the clip, and the knot is maintained in the lace slot and the shoelace clamped between the elastic band and the rigid tab member.