Patents by Inventor Travis J. Delashmutt

Travis J. Delashmutt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6797622
    Abstract: Polysilicon formed over an underlying insulator may be highly selectively etched. This may permit the replacement of polysilicon gate electrode material, implementing a dual layer process or any of a variety of other applications.
    Type: Grant
    Filed: July 31, 2002
    Date of Patent: September 28, 2004
    Assignee: Intel Corporation
    Inventors: Justin K. Brask, Steven J. Keating, Mark L. Doczy, Travis J. Delashmutt
  • Publication number: 20040023477
    Abstract: Polysilicon formed over an underlying insulator may be highly selectively etched. This may permit the replacement of polysilicon gate electrode material, implementing a dual layer process or any of a variety of other applications.
    Type: Application
    Filed: July 31, 2002
    Publication date: February 5, 2004
    Inventors: Justin K. Brask, Steven J. Keating, Mark L. Doczy, Travis J. Delashmutt