Patents by Inventor Travis Rampton

Travis Rampton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tungsten structures and methods of forming the structures
    Patent number: 11791268
    Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.
    Type: Grant
    Filed: February 7, 2022
    Date of Patent: October 17, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein
  • TUNGSTEN STRUCTURES AND METHODS OF FORMING THE STRUCTURES
    Publication number: 20220230962
    Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.
    Type: Application
    Filed: February 7, 2022
    Publication date: July 21, 2022
    Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein
  • Tungsten structures and methods of forming the structures
    Patent number: 11244903
    Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: February 8, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein
  • TUNGSTEN STRUCTURES AND METHODS OF FORMING THE STRUCTURES
    Publication number: 20210202388
    Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.
    Type: Application
    Filed: December 30, 2019
    Publication date: July 1, 2021
    Inventors: Jordan D. Greenlee, Christian George Emor, Travis Rampton, Everett Allen McTeer, Rita J. Klein