Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are a 3D mapping device that is configured to measure the surface profile of a non-round substrate and a position of the substrate on the robot arm.

Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are methods and apparatus that detect radiation transmitted along the thickness of the substrate between the top surface and the bottom surface, determine a signal strength as the substrate is rotated and obtaining a signal strength pattern to determine a position of the substrate within the chamber with respect to a center position.

Abstract: Embodiments of gate valves and methods for using same are provided herein. In some embodiments, a gate valve for processing a continuous substrate includes: a body; a plurality of seals disposed within the body and configured to move between a closed position and an open position; a plurality of volumes disposed between adjacent ones of the plurality of seals and defined by the plurality of seals and the body; a gas inlet disposed through a first side of the body and fluidly coupled to an innermost one of the plurality of volumes; and a gas outlet disposed through a second side of the body opposite the first side and fluidly coupled to other ones of the plurality of volumes disposed on either side of the innermost one of the plurality of volumes.

Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are methods and apparatus that detect radiation transmitted along the thickness of the substrate between the top surface and the bottom surface, determine a signal strength as the substrate is rotated and obtaining a signal strength pattern to determine a position of the substrate within the chamber with respect to a center position.

Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are a 3D mapping device that is configured to measure the surface profile of a non-round substrate and a position of the substrate on the robot arm.

Abstract: Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.