Abstract: Package assemblies for storing diagnostic cartridges or storing wet/dry reagents are described herein. In some embodiments, an apparatus includes a tray member defining a first volume and a second volume, and a cover member coupled to the tray member covering the first volume and the second volume. The tray member includes a central portion that separates the first volume from the second volume. The first volume is configured to receive a desiccant package and a sample container containing a first reagent. The first reagent has a solid form. The second volume is configured to receive a reagent module containing a second reagent. The second reagent has a liquid form. The cover member and the central portion of the tray member are configured to isolate the first volume from the second volume.

Abstract: Package assemblies for storing diagnostic cartridges or storing wet/dry reagents are described herein. In some embodiments, an apparatus includes a tray member defining a first volume and a second volume, and a cover member coupled to the tray member covering the first volume and the second volume. The tray member includes a central portion that separates the first volume from the second volume. The first volume is configured to receive a desiccant package and a sample container containing a first reagent. The first reagent has a solid form. The second volume is configured to receive a reagent module containing a second reagent. The second reagent has a liquid form. The cover member and the central portion of the tray member are configured to isolate the first volume from the second volume.

Abstract: A process for forming trenches in a target material includes forming a masking layer onto the target material, where the masking layer comprises a material having high selectivity to a plasma etch gas adapted for etching the target material. A pattern is formed in the masking layer to expose portions of the target material and the sample is placed on an angle mount at a pre-determined angle relative to a cathode of a reactive ion etcher so that the target material is within a plasma dark space of the plasma etch gas. Ballistic ions within the plasma dark space form a trench structure within the target material. The process may further include repeating the steps of positioning the sample and etching the exposed portions of the target material with the substrate at a different angle to define a triangular structure.

Abstract: A process for forming trenches in a target material includes forming a masking layer onto the target material, where the masking layer comprises a material having high selectivity to a plasma etch gas adapted for etching the target material. A pattern is formed in the masking layer to expose portions of the target material and the sample is placed on an angle mount at a pre-determined angle relative to a cathode of a reactive ion etcher so that the target material is within a plasma dark space of the plasma etch gas. Ballistic ions within the plasma dark space form a trench structure within the target material. The process may further include repeating the steps of positioning the sample and etching the exposed portions of the target material with the substrate at a dif ferent angle to define a triangular structure.