Patents by Inventor Trevan Landin

Trevan Landin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR PREPARING SAMPLES FOR IMAGING
    Publication number: 20150330877
    Abstract: A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. An ion beam mills exposes a cross section of the work piece using a bulk mill process. A deposition precursor gas is directed to the sample surface while a small amount of material is removed from the exposed cross section face, the deposition precursor producing a more uniform cross section. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples.
    Type: Application
    Filed: December 30, 2013
    Publication date: November 19, 2015
    Applicant: FEI Company
    Inventors: Michael Schmidt, Jeffrey Blackwood, Stacey Stone, Sang Hoon Lee, Ronald Kelley, Trevan Landin
  • Germanium deposition
    Patent number: 7479443
    Abstract: A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 ?. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: January 20, 2009
    Assignee: ASM America Inc.
    Inventors: Matthias Bauer, Paul Brabant, Trevan Landin
  • Germanium deposition
    Patent number: 7329593
    Abstract: A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 ?. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: February 12, 2008
    Assignee: ASM America, Inc.
    Inventors: Matthias Bauer, Paul Brabant, Trevan Landin
  • Germanium Deposition
    Publication number: 20080017101
    Abstract: A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 ?. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
    Type: Application
    Filed: October 4, 2007
    Publication date: January 24, 2008
    Applicant: ASM America, Inc.
    Inventors: Matthias Bauer, Paul Brabant, Trevan Landin
  • Germanium deposition
    Publication number: 20050191826
    Abstract: A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 ?. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
    Type: Application
    Filed: February 25, 2005
    Publication date: September 1, 2005
    Inventors: Matthia Bauer, Paul Brabant, Trevan Landin